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Device structure and manufacturing method using HDP deposited source-body implant block Grant 10,896,968 - Bhalla , et al. January 19, 2 | 2021-01-19 |
MOSFET switch circuit for slow switching application Grant 10,418,899 - Lui , et al. Sept | 2019-09-17 |
Robust semiconductor power devices with design to protect transistor cells with slower switching speed Grant 10,032,584 - Lui , et al. July 24, 2 | 2018-07-24 |
Robust Semiconductor Power Devices With Design To Protect Transistor Cells With Slower Switching Speed App 20180138906 - Lui; Sik K. ;   et al. | 2018-05-17 |
Power MOSFET device structure for high frequency applications Grant 9,806,175 - Bhalla , et al. October 31, 2 | 2017-10-31 |
Device Structure And Manufacturing Method Using Hdp Deposited Source-body Implant Block App 20170288034 - Bhalla; Anup ;   et al. | 2017-10-05 |
Trench junction barrier controlled Schottky Grant 9,741,851 - Lui , et al. August 22, 2 | 2017-08-22 |
Device structure and manufacturing method using HDP deposited source-body implant block Grant 9,716,156 - Bhalla , et al. July 25, 2 | 2017-07-25 |
Device Structure And Manufacturing Method Using Hdp Deposited Source-body Implant Block App 20160322469 - Bhalla; Anup ;   et al. | 2016-11-03 |
Power Mosfet Device Structure For High Frequency Applications App 20160247899 - Bhalla; Anup ;   et al. | 2016-08-25 |
Robust Semiconductor Power Devices With Design To Protect Transistor Cells With Slower Switching Speed App 20160191048 - Lui; Sik K. ;   et al. | 2016-06-30 |
Mosfet Switch Circuit For Slow Switching Application App 20150295495 - Lui; Sik K. ;   et al. | 2015-10-15 |
Edge Termination Configurations For High Voltage Semiconductor Power Devices App 20150206943 - Bobde; Madhur ;   et al. | 2015-07-23 |
Device structure and manufacturing method using HDP deposited source-body implant block Grant 9,024,378 - Bhalla , et al. May 5, 2 | 2015-05-05 |
Active clamp protection circuit for power semiconductor device for high frequency switching Grant 9,013,848 - Lui April 21, 2 | 2015-04-21 |
Shielded gate trench (SGT) mosfet devices and manufacturing processes Grant 8,963,240 - Bhalla , et al. February 24, 2 | 2015-02-24 |
Power MOSFET device structure for high frequency applications Grant 8,963,233 - Bhalla , et al. February 24, 2 | 2015-02-24 |
Robust semiconductor power devices with design to protect transistor cells with slower switching speed Grant 8,946,942 - Lui , et al. February 3, 2 | 2015-02-03 |
Trench Junction Barrier Controlled Schottky App 20140332882 - Lui; SiK K. ;   et al. | 2014-11-13 |
Shielded Gate Trench (sgt) Mosfet Devices And Manufacturing Processes App 20140319606 - Bhalla; Anup ;   et al. | 2014-10-30 |
Device Structure And Manufacturing Method Using Hdp Deposited Source-body Implant Block App 20140225187 - Bhalla; Anup ;   et al. | 2014-08-14 |
Active Clamp Protection Circuit For Power Semiconductor Device For High Frequency Switching App 20140085760 - Lui; Sik K. | 2014-03-27 |
Edge termination configurations for high voltage semiconductor power devices Grant 8,643,135 - Bobde , et al. February 4, 2 | 2014-02-04 |
Power MOS device fabrication Grant 8,597,998 - Bhalla , et al. December 3, 2 | 2013-12-03 |
Trench junction barrier controlled Schottky Grant 8,445,370 - Lui , et al. May 21, 2 | 2013-05-21 |
Shielded gate trench (SGT) MOSFET devices and manufacturing processes Grant 8,431,989 - Bhalla , et al. April 30, 2 | 2013-04-30 |
Power Mosfet Device Structure For High Frequency Applications App 20130093001 - Bhalla; Anup ;   et al. | 2013-04-18 |
Device structure and manufacturing method using HDP deposited using deposited source-body implant block Grant 8,372,708 - Bhalla , et al. February 12, 2 | 2013-02-12 |
Inverted-trench grounded-source FET structure with trenched source body short electrode Grant 8,357,973 - Lui , et al. January 22, 2 | 2013-01-22 |
Edge termination configurations for high voltage semiconductor power devices App 20120306044 - Bobde; Madhur ;   et al. | 2012-12-06 |
Power MOS device fabrication Grant 8,288,229 - Bhalla , et al. October 16, 2 | 2012-10-16 |
Calibration technique for measuring gate resistance of power MOS gate device at wafer level Grant 8,174,283 - Bhalla , et al. May 8, 2 | 2012-05-08 |
Integrated circuit package for semiconductior devices with improved electric resistance and inductance Grant 8,169,062 - Luo , et al. May 1, 2 | 2012-05-01 |
Power MOSFET device structure for high frequency applications Grant 8,163,618 - Bhalla , et al. April 24, 2 | 2012-04-24 |
MOSFET using gate work function engineering for switching applications Grant 8,119,482 - Bhalla , et al. February 21, 2 | 2012-02-21 |
Inverted-trench grounded-source FET structure with trenched source body short electrode App 20120025301 - Lui; Sik K. ;   et al. | 2012-02-02 |
Device structure and manufacturing method using HDP deposited using deposited source-body implant block App 20120018793 - Bhalla; Anup ;   et al. | 2012-01-26 |
Structures and methods for forming schottky diodes on a p-substrate or a bottomanode schottky diode App 20120007206 - Bhalla; Anup ;   et al. | 2012-01-12 |
Integrated circuit package for semiconductor devices with improved electric resistance and inductance Grant 8,067,822 - Luo , et al. November 29, 2 | 2011-11-29 |
Device structure and manufacturing method using HDP deposited source-body implant block Grant 8,035,159 - Bhalla , et al. October 11, 2 | 2011-10-11 |
Integrated circuit package for semiconductior devices with improved electric resistance and inductance App 20110221005 - Luo; Leeshawn ;   et al. | 2011-09-15 |
Inverted-trench grounded-source FET structure with trenched source body short electrode Grant 8,008,716 - Lui , et al. August 30, 2 | 2011-08-30 |
Power Mos Device Fabrication App 20110207276 - Bhalla; Anup ;   et al. | 2011-08-25 |
Shielded gate trench (SGT) mosfet devices and manufacturing processes App 20110204440 - Bhalla; Anup ;   et al. | 2011-08-25 |
MOSFET with a second poly and an inter-poly dielectric layer over gate for synchronous rectification Grant 7,960,233 - Lui , et al. June 14, 2 | 2011-06-14 |
Shielded gate trench (SGT) MOSFET devices and manufacturing processes Grant 7,936,011 - Bhalla , et al. May 3, 2 | 2011-05-03 |
Mosfet using gate work function engineering for switching applications App 20110097885 - Bhalla; Anup ;   et al. | 2011-04-28 |
Trenched mosfets with part of the device formed on a (110) crystal plane App 20110042724 - Bhalla; Anup ;   et al. | 2011-02-24 |
MOSFET using gate work function engineering for switching applications Grant 7,863,675 - Bhalla , et al. January 4, 2 | 2011-01-04 |
MOSFET with a second poly and an inter-poly dielectric layer over gate for synchronous rectification App 20100330767 - Lui; Sik K. ;   et al. | 2010-12-30 |
Trench junction barrier controlled Schottky App 20100258897 - Lui; Sik K. ;   et al. | 2010-10-14 |
MOSFET with a second poly and an inter-poly dielectric layer over gate for synchronous rectification Grant 7,786,531 - Lui , et al. August 31, 2 | 2010-08-31 |
MOSFET for synchronous rectification Grant 7,764,105 - Bhalla , et al. July 27, 2 | 2010-07-27 |
Configurations and method for carrying out wafer level unclamped inductive switching (UIS) tests Grant 7,755,379 - Lui , et al. July 13, 2 | 2010-07-13 |
Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact Grant 7,745,878 - Bhalla , et al. June 29, 2 | 2010-06-29 |
Power mosfet device structure for high frequency applications App 20100148246 - Bhalla; Anup ;   et al. | 2010-06-17 |
Trench junction barrier controlled Schottky device with top and bottom doped regions for enhancing forward current in a vertical direction Grant 7,737,522 - Lui , et al. June 15, 2 | 2010-06-15 |
Shielded gate trench (SGT) MOSFET devices and manufacturing processes App 20100090276 - Bhalla; Anup ;   et al. | 2010-04-15 |
Thermally stable semiconductor power device Grant 7,671,662 - Lui , et al. March 2, 2 | 2010-03-02 |
Power MOSFET device structure for high frequency applications Grant 7,659,570 - Bhalla , et al. February 9, 2 | 2010-02-09 |
Shielded gate trench (SGT) MOSFET devices and manufacturing processes Grant 7,633,119 - Bhalla , et al. December 15, 2 | 2009-12-15 |
Inverted J-lead for power devices Grant 7,633,140 - Luo , et al. December 15, 2 | 2009-12-15 |
Calibration technique for measuring gate resistance of power MOS gate device at wafer level App 20090219044 - Bhalla; Anup ;   et al. | 2009-09-03 |
Robust semiconductor power devices with design to protect transistor cells with slower switching speed App 20090218890 - Lui; Sik K. ;   et al. | 2009-09-03 |
Thermally stable semiconductor power device App 20090128223 - Lui; Sik K. ;   et al. | 2009-05-21 |
Calibration technique for measuring gate resistance of power MOS gate device at water level Grant 7,535,021 - Bhalla , et al. May 19, 2 | 2009-05-19 |
Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact App 20090072301 - Bhalla; Anup ;   et al. | 2009-03-19 |
Structures and methods for forming Schottky diodes on a P-substrate or a bottom anode Schottky diode App 20090039456 - Bhalla; Anup ;   et al. | 2009-02-12 |
Integrated circuit package for semiconductior devices with improved electric resistance and inductance App 20090014853 - Luo; Leeshawn ;   et al. | 2009-01-15 |
MOSFET for synchronous rectification App 20080309382 - Bhalla; Anup ;   et al. | 2008-12-18 |
Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact Grant 7,453,119 - Bhalla , et al. November 18, 2 | 2008-11-18 |
Device structure and manufacturing method using HDP deposited source-body implant block App 20080265289 - Bhalla; Anup ;   et al. | 2008-10-30 |
Thermally stable semiconductor power device Grant 7,443,225 - Lui , et al. October 28, 2 | 2008-10-28 |
Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout Grant 7,436,022 - Bhalla , et al. October 14, 2 | 2008-10-14 |
Configurations and method for carrying out wafer level unclamped inductive switching (UIS) tests App 20080186048 - Lui; Sik K. ;   et al. | 2008-08-07 |
MOSFET using gate work function engineering for switching applications App 20080173956 - Bhalla; Anup ;   et al. | 2008-07-24 |
Integrated circuit package for semiconductor devices having a reduced leadframe pad and an increased bonding area Grant 7,391,100 - Luo , et al. June 24, 2 | 2008-06-24 |
MOSFET for synchronous rectification Grant 7,378,884 - Bhalla , et al. May 27, 2 | 2008-05-27 |
Configurations and method for carrying out wafer level unclamped inductive switching (UIS) tests Grant 7,355,433 - Lui , et al. April 8, 2 | 2008-04-08 |
Inverted-trench grounded-source FET structure with trenched source body short electrode App 20080067584 - Lui; Sik K ;   et al. | 2008-03-20 |
Thermally stable semiconductor power device App 20080001646 - Lui; Sik K. ;   et al. | 2008-01-03 |
MOSFET for synchronous rectification App 20070221972 - Bhalla; Anup ;   et al. | 2007-09-27 |
Shielded gate trench (SGT) MOSFET devices and manufacturing processes App 20070194374 - Bhalla; Anup ;   et al. | 2007-08-23 |
Configurations and method for carrying out wafer level unclamped inductive switching (UIS) tests App 20070182435 - Lui; Sik K. ;   et al. | 2007-08-09 |
MOSFET for synchronous rectification Grant 7,221,195 - Bhalla , et al. May 22, 2 | 2007-05-22 |
Calibration technique for measuring gate resistance of power MOS gate device at wafer level App 20070096093 - Bhalla; Anup ;   et al. | 2007-05-03 |
Power semiconductor package Grant 7,208,818 - Luo , et al. April 24, 2 | 2007-04-24 |
High speed switching MOSFETS using multi-parallel die packages with/without special leadframes Grant 7,183,616 - Bhalla , et al. February 27, 2 | 2007-02-27 |
Trench junction barrier controlled Schottky App 20070034901 - Lui; Sik K. ;   et al. | 2007-02-15 |
MOSFET using gate work function engineering for switching applications App 20060273379 - Bhalla; Anup ;   et al. | 2006-12-07 |
Power MOSFET device structure for high frequency applications App 20060249785 - Bhalla; Anup ;   et al. | 2006-11-09 |
Low cost power MOSFET with current monitoring Grant 7,122,882 - Lui , et al. October 17, 2 | 2006-10-17 |
MOSFET with a second poly and an inter-poly dielectric layer over gate for synchronous rectification App 20060220107 - Lui; Sik K. ;   et al. | 2006-10-05 |
MOSFET for synchronous rectification App 20060208788 - Bhalla; Anup ;   et al. | 2006-09-21 |
Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact App 20060209887 - Bhalla; Anup ;   et al. | 2006-09-21 |
Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout App 20060202264 - Bhalla; Anup ;   et al. | 2006-09-14 |
Trenched MOSFETS with part of the device formed on a (110) crystal plane App 20060108635 - Bhalla; Anup ;   et al. | 2006-05-25 |
Low cost power MOSFET with current monitoring App 20060091505 - Lui; Sik K. ;   et al. | 2006-05-04 |
Power semiconductor package App 20060017141 - Luo; Leeshawn ;   et al. | 2006-01-26 |
Multiple device package App 20050280133 - Luo, Leeshawn ;   et al. | 2005-12-22 |
Integrated circuit package for semiconductor devices with improved electric resistance and inductance App 20050145996 - Luo, Leeshawn ;   et al. | 2005-07-07 |
Inverted J-lead package for power devices App 20050127532 - Luo, Leeshawn ;   et al. | 2005-06-16 |
Integrated circuit package for semiconductor devices with improved electric resistance and inductance Grant 6,841,852 - Luo , et al. January 11, 2 | 2005-01-11 |
Integrated circuit package for semicoductor devices with improved electric resistance and inductance App 20040004272 - Luo, Leeshawn ;   et al. | 2004-01-08 |
High speed switching mosfets using multi-parallel die packages with/without special leadframes App 20030183924 - Bhalla, Anup ;   et al. | 2003-10-02 |
Redundancy circuit for programmable integrated circuits Grant 5,818,778 - Lui , et al. October 6, 1 | 1998-10-06 |