Lui; Kam Hong

Patent Applications and Registrations

Patent applications and USPTO patent grants for Lui; Kam Hong.The latest application filed is for "semiconductor device with trench-like feed-throughs".

Company Profile

0.17.13

Lui; Kam Hong - Santa Clara CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor device with trench-like feed-throughs Grant 10,032,901 - Pattanayak , et al. July 24, 2	2018-07-24
Semiconductor Device With Trench-like Feed-throughs App 20170025527 - Pattanayak; Deva ; et al.	2017-01-26
Semiconductor device with trench-like feed-throughs Grant 9,306,056 - Pattanayak , et al. April 5, 2	2016-04-05
Stacked trench metal-oxide-semiconductor field effect transistor device Grant 8,183,629 - Pattanayak , et al. May 22, 2	2012-05-22
Semiconductor Device With Trench-like Feed-throughs App 20110101525 - Pattanayak; Deva ; et al.	2011-05-05
Method of fabricating super trench MOSFET including buried source electrode Grant 7,704,836 - Pattanayak , et al. April 27, 2	2010-04-27
Method of fabricating super trench MOSFET including buried source electrode App 20100019316 - Pattanayak; Deva N. ; et al.	2010-01-28
Super trench MOSFET including buried source electrode Grant 7,557,409 - Pattanayak , et al. July 7, 2	2009-07-07
Stacked Trench Metal-Oxide-Semiconductor Field Effect Transistor Device App 20090050960 - Pattanayak; Deva ; et al.	2009-02-26
Trench-gated MIS device having thick polysilicon insulation layer at trench bottom and method of fabricating the same Grant 7,494,876 - Giles , et al. February 24, 2	2009-02-24
Method of fabricating super trench MOSFET including buried source electrode App 20080182376 - Pattanayak; Deva N. ; et al.	2008-07-31
Method of manufacturing a drain side gate trench metal-oxide-semiconductor field effect transistor Grant 7,344,945 - Pattanayak , et al. March 18, 2	2008-03-18
Super trench MOSFET including buried source electrode and method of fabricating the same App 20070187753 - Pattanayak; Deva N. ; et al.	2007-08-16
Super trench MOSFET including buried source electrode and method of fabricating the same Grant 7,183,610 - Pattanayak , et al. February 27, 2	2007-02-27
Self-aligned differential oxidation in trenches by ion implantation Grant 7,012,005 - Lichtenberger , et al. March 14, 2	2006-03-14
Super trench MOSFET including buried source electrode and method of fabricating the same App 20050242392 - Pattanayak, Deva N. ; et al.	2005-11-03
Method for making trench MIS device with reduced gate-to-drain capacitance Grant 6,921,697 - Darwish , et al. July 26, 2	2005-07-26
Drain side gate trench metal-oxide-semiconductor field effect transistor Grant 6,906,380 - Pattanayak , et al. June 14, 2	2005-06-14
Trench MIS device with graduated gate oxide layer Grant 6,903,412 - Darwish , et al. June 7, 2	2005-06-07
Trench MIS device with reduced gate-to-drain capacitance Grant 6,882,000 - Darwish , et al. April 19, 2	2005-04-19
Method of fabricating trench MIS device with graduated gate oxide layer Grant 6,875,657 - Yue , et al. April 5, 2	2005-04-05
Trench MIS device with active trench corners and thick bottom oxide Grant 6,849,898 - Darwish , et al. February 1, 2	2005-02-01
Thicker oxide formation at the trench bottom by selective oxide deposition Grant 6,709,930 - Chan , et al. March 23, 2	2004-03-23
Thicker Oxide Formation At The Trench Bottom By Selective Oxide Deposition App 20030235958 - Chan, Ben ; et al.	2003-12-25
Method for making trench MIS device with reduced gate-to-drain capacitance App 20030062570 - Darwish, Mohamed N. ; et al.	2003-04-03
Trench MIS device with reduced gate-to-drain capacitance App 20030030092 - Darwish, Mohamed N. ; et al.	2003-02-13
Trench MIS device with graduated gate oxide layer App 20030030104 - Darwish, Mohamed N. ; et al.	2003-02-13
Trench MIS device with active trench corners and thick bottom oxide and method of making the same App 20030032247 - Darwish, Mohamed N. ; et al.	2003-02-13
Method of fabricating trench MIS device with graduated gate oxide layer App 20030032248 - Yue, Christiana ; et al.	2003-02-13

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.