loadpatents
name:-0.01159405708313
name:-0.016278028488159
name:-0.00047016143798828
Lu; Wenpin Patent Filings

Lu; Wenpin

Patent Applications and Registrations

Patent applications and USPTO patent grants for Lu; Wenpin.The latest application filed is for "flash memory having insulating liners between source/drain lines and channels".

Company Profile
0.15.8
  • Lu; Wenpin - Hsinchu County TW
  • Lu; Wenpin - Hsinchu TW
  • Lu; Wenpin - Ilan TW
  • Lu; Wenpin - I-Lan TW
  • Lu; Wenpin - E-Lan TW
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Nonvolatile memory device and method of forming the same
Grant 8,330,232 - Ku , et al. December 11, 2
2012-12-11
Design tool for charge trapping memory using simulated programming operations
Grant 7,971,177 - Ku , et al. June 28, 2
2011-06-28
Flash memory having insulating liners between source/drain lines and channels
Grant 7,889,556 - Ku , et al. February 15, 2
2011-02-15
Flash Memory Having Insulating Liners Between Source/drain Lines And Channels
App 20100120210 - KU; SHAW-HUNG ;   et al.
2010-05-13
Flash memory having insulating liners between source/drain lines and channels
Grant 7,668,010 - Ku , et al. February 23, 2
2010-02-23
Tool For Charge Trapping Memory Using Simulated Programming Operations
App 20090276737 - Ku; Shaw Hung ;   et al.
2009-11-05
Flash Memory Having Insulating Liners Between Source/drain Lines And Channels
App 20090213656 - Ku; Shaw Hung ;   et al.
2009-08-27
Non-volatile memory device having a nitride barrier to reduce the fast erase effect
Grant 7,400,011 - Tseng , et al. July 15, 2
2008-07-15
Hole annealing methods of non-volatile memory cells
Grant 7,301,818 - Lu , et al. November 27, 2
2007-11-27
Non-volatile memory device having a nitride barrier to reduce the fast erase effect
App 20070155100 - Tseng; Uway ;   et al.
2007-07-05
Non-volatile memory device having a nitride barrier to reduce the fast erase effect
Grant 7,199,007 - Tseng , et al. April 3, 2
2007-04-03
Hole annealing methods of non-volatile memory cells
App 20070058440 - Lu; Wenpin ;   et al.
2007-03-15
Nonvolatile memory device and method of forming the same
App 20070040211 - Ku; Shao Hong ;   et al.
2007-02-22
Method of fabricating a memory device having a self-aligned contact
Grant 6,960,506 - Chiu , et al. November 1, 2
2005-11-01
Method of fabricating a memory device having a self-aligned contact
App 20050106819 - Chiu, Hung-Yu ;   et al.
2005-05-19
Method of reducing charge loss for nonvolatile memory
Grant 6,746,968 - Tseng , et al. June 8, 2
2004-06-08
Current source component with process tracking characteristics for compact programmed Vt distribution of flash EPROM
Grant 6,614,687 - Chen , et al. September 2, 2
2003-09-02
Current Source Component With Process Tracking Characteristics For Compact Programmed Vt Distribution Of Flash Eprom
App 20020163835 - Chen, Ming-Shang ;   et al.
2002-11-07
Auto-stopped page soft-programming method with voltage limited component
Grant 6,363,013 - Lu , et al. March 26, 2
2002-03-26
Virtual ground flash cell with asymmetrically placed source and drain and method of fabrication
Grant 6,130,452 - Lu , et al. October 10, 2
2000-10-10
Method of forming an asymmetric bird's beak cell for a flash EEPROM
Grant 5,963,808 - Lu , et al. October 5, 1
1999-10-05
Method and circuit for substrate current induced hot e.sup.- injection (SCIHE) approach for V.sub.T convergence at low V.sub.CC voltage
Grant 5,912,845 - Chen , et al. June 15, 1
1999-06-15
Virtual ground flash cell with asymmetrically placed source and drain and method of fabrication
Grant 5,837,584 - Lu , et al. November 17, 1
1998-11-17

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