Lu; Hong-Qiang

Patent Applications and Registrations

Patent applications and USPTO patent grants for Lu; Hong-Qiang.The latest application filed is for "dielectric barrier films for use as copper barrier layers in semiconductor trench and via structures".

Company Profile

0.9.5

Lu; Hong-Qiang - Fremont CA
Lu; Hong-Qiang - Gresham OR
Lu; Hong-Qiang - Lake Oswego OR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Methods and structure for forming copper barrier layers integral with semiconductor substrates structures Grant 7,646,077 - Lu , et al. January 12, 2	2010-01-12
Dielectric Barrier Films For Use As Copper Barrier Layers In Semiconductor Trench And Via Structures App 20080303155 - LU; Hong-Qiang ; et al.	2008-12-11
Dielectric barrier films for use as copper barrier layers in semiconductor trench and via structures Grant 7,427,563 - Lu , et al. September 23, 2	2008-09-23
Dual layer barrier film techniques to prevent resist poisoning Grant 7,393,780 - Lu , et al. July 1, 2	2008-07-01
Dual layer barrier film techniques to prevent resist poisoning App 20060205203 - Lu; Hong-Qiang ; et al.	2006-09-14
Dual layer barrier film techniques to prevent resist poisoning Grant 7,071,094 - Lu , et al. July 4, 2	2006-07-04
Carbon nanotube memory cell for integrated circuit structure with removable side spacers to permit access to memory cell and process for forming such memory cell Grant 6,955,937 - Burke , et al. October 18, 2	2005-10-18
Dielectric barrier films for use as copper barrier layers in semiconductor trench and via structures App 20050208758 - Lu, Hong-Qiang ; et al.	2005-09-22
Dielectric barrier films for use as copper barrier layers in semiconductor trench and via structures Grant 6,939,800 - Lu , et al. September 6, 2	2005-09-06
Dual layer barrier film techniques to prevent resist poisoning App 20040253784 - Lu, Hong-Qiang ; et al.	2004-12-16
Dual layer barrier film techniques to prevent resist poisoning Grant 6,812,134 - Lu , et al. November 2, 2	2004-11-02
Method and structure for forming dielectric layers having reduced dielectric constants Grant 6,774,057 - Lu , et al. August 10, 2	2004-08-10
Process for forming metal-filled openings in low dielectric constant dielectric material while inhibiting via poisoning Grant 6,503,840 - Catabay , et al. January 7, 2	2003-01-07
Process for forming metal-filled openings in low dielectric constant dielectric material while inhibiting via poisoning App 20020164877 - Catabay, Wilbur G. ; et al.	2002-11-07

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