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Patent applications and USPTO patent grants for Lowis; Royce.The latest application filed is for "semiconductor device channel termination".
Patent | Date |
---|---|
Method of forming a channel termination region using a trench and a channel stopper ring Grant 7,829,420 - Lowis November 9, 2 | 2010-11-09 |
Semiconductor Device Channel Termination App 20090209077 - LOWIS; Royce | 2009-08-20 |
Semiconductor device with sense structure Grant 7,439,582 - Lowis October 21, 2 | 2008-10-21 |
Semiconductor device channel termination Grant 7,425,752 - Lowis September 16, 2 | 2008-09-16 |
Semiconductor device with sense structure App 20060163652 - Lowis; Royce | 2006-07-27 |
Semiconductor device channel termination App 20060071294 - Lowis; Royce | 2006-04-06 |
Temperature sensing circuit Grant 5,563,760 - Lowis , et al. October 8, 1 | 1996-10-08 |
Temperature sensing circuit Grant 5,336,943 - Kelly , et al. August 9, 1 | 1994-08-09 |
Insulated-gate field-effect transistors Grant 4,521,795 - Coe , et al. June 4, 1 | 1985-06-04 |
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