loadpatents
name:-0.016018152236938
name:-0.010761976242065
name:-0.0050749778747559
LONGCOR; Steven Patent Filings

LONGCOR; Steven

Patent Applications and Registrations

Patent applications and USPTO patent grants for LONGCOR; Steven.The latest application filed is for "memory element with a reactive metal layer".

Company Profile
5.11.13
  • LONGCOR; Steven - Mountain View CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Memory Element With A Reactive Metal Layer
App 20210013262 - CHEVALLIER; Christophe J. ;   et al.
2021-01-14
Memory element with a reactive metal layer
Grant 10,833,125 - Chevallier , et al. November 10, 2
2020-11-10
Memory element with a reactive metal layer
Grant 10,797,106 - Chevallier , et al. October 6, 2
2020-10-06
Memory Element With A Reactive Metal Layer
App 20190305047 - CHEVALLIER; Christophe J. ;   et al.
2019-10-03
Memory element with a reactive metal layer
Grant 10,340,312 - Chevallier , et al.
2019-07-02
Memory Element With A Reactive Metal Layer
App 20180122857 - Chevallier; Christophe J. ;   et al.
2018-05-03
Memory element with a reactive metal layer
Grant 9,806,130 - Chevallier , et al. October 31, 2
2017-10-31
Memory Element With A Reactive Metal Layer
App 20170179197 - Chevallier; Christophe J. ;   et al.
2017-06-22
Memory element with a reactive metal layer
Grant 9,570,515 - Chevallier , et al. February 14, 2
2017-02-14
Memory Element With A Reactive Metal Layer
App 20160005793 - Chevallier; Christophe J. ;   et al.
2016-01-07
Memory element with a reactive metal layer
Grant 9,159,408 - Chevallier , et al. October 13, 2
2015-10-13
Memory Element With a Reactive Metal Layer
App 20140211542 - Chevallier; Christophe J. ;   et al.
2014-07-31
Memory element with a reactive metal layer
Grant 8,675,389 - Chevallier , et al. March 18, 2
2014-03-18
Method for fabricating multi-resistive state memory devices
Grant 8,611,130 - Rinerson , et al. December 17, 2
2013-12-17
Memory device using ion implant isolated conductive metal oxide
Grant 8,268,667 - Rinerson , et al. September 18, 2
2012-09-18
Memory Element With A Reactive Metal Layer
App 20120033481 - RINERSON; DARRELL ;   et al.
2012-02-09
Two terminal memory array having reference cells
App 20080002483 - Rinerson; Darrell ;   et al.
2008-01-03
Two terminal memory array having reference cells
App 20080002473 - Rinerson; Darrell ;   et al.
2008-01-03
Two terminal memory array having reference cells
App 20080002461 - Rinerson; Darrell ;   et al.
2008-01-03
Two terminal memory array having reference cells
App 20060245241 - Rinerson; Darrell ;   et al.
2006-11-02
Memory element having islands
App 20060028864 - Rinerson; Darrell ;   et al.
2006-02-09
Two terminal memory array having reference cells
App 20060018149 - Rinerson; Darrell ;   et al.
2006-01-26

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