loadpatents
Patent applications and USPTO patent grants for Liu; Chuan-Pu.The latest application filed is for "composite material for electrode, method of fabricating the same, and electrode of rechargeable battery including the same".
Patent | Date |
---|---|
Composite for generating hydrogen Grant 11,383,975 - Cheng , et al. July 12, 2 | 2022-07-12 |
Composite Material For Electrode, Method Of Fabricating The Same, And Electrode Of Rechargeable Battery Including The Same App 20220123304 - LIU; CHUAN-PU ;   et al. | 2022-04-21 |
Composite for Generating Hydrogen App 20210363005 - CHENG; YIN-WEI ;   et al. | 2021-11-25 |
Image sensor device Grant 11,121,166 - Chien , et al. September 14, 2 | 2021-09-14 |
Composite particle for electrode Grant 11,063,253 - Liu , et al. July 13, 2 | 2021-07-13 |
Semiconductor Device App 20210083048 - LIN; Jia-Ming ;   et al. | 2021-03-18 |
Method for forming trench structure of semiconductor device Grant 10,854,713 - Lin , et al. December 1, 2 | 2020-12-01 |
Silicide implants Grant 10,763,338 - Wu , et al. Sep | 2020-09-01 |
Composite Particle For Electrode App 20200176761 - LIU; Chuan Pu ;   et al. | 2020-06-04 |
Image Sensor Device App 20190252429 - CHIEN; Volume ;   et al. | 2019-08-15 |
Image sensor device and method for forming the same Grant 10,276,620 - Chien , et al. | 2019-04-30 |
Conductive composite material, and negative electrode material and secondary battery containing the same Grant 10,270,091 - Cheng , et al. | 2019-04-23 |
Silicide Implants App 20190067436 - WU; Chia-Yang ;   et al. | 2019-02-28 |
Conductive Composite Material, And Negative Electrode Material And Secondary Battery Containing The Same App 20180175378 - Cheng; Yin Wei ;   et al. | 2018-06-21 |
Method For Forming Trench Structure Of Semiconductor Device App 20180151667 - LIN; Jia-Ming ;   et al. | 2018-05-31 |
Trench structure of semiconductor device having uneven nitrogen distribution liner Grant 9,871,100 - Lin , et al. January 16, 2 | 2018-01-16 |
Trench Structure Of Semiconductor Device And Manufacturing Method Thereof App 20170033179 - LIN; Jia-Ming ;   et al. | 2017-02-02 |
Image sensor device with light blocking structure Grant 9,324,752 - Chien , et al. April 26, 2 | 2016-04-26 |
Diamond film coated electrode for battery Grant 9,196,905 - Tzeng , et al. November 24, 2 | 2015-11-24 |
Backside Illuminated Image Sensor And Method Of Manufacturing The Same App 20150279880 - JANGJIAN; SHIU-KO ;   et al. | 2015-10-01 |
Image Sensor Device With Light Blocking Structure App 20150243696 - CHIEN; Volume ;   et al. | 2015-08-27 |
Image Sensor Device And Method For Forming The Same App 20150243805 - CHIEN; Volume ;   et al. | 2015-08-27 |
Diamond Film Coated Electrode for Battery App 20140212763 - TZENG; Yonhua ;   et al. | 2014-07-31 |
Surface plasmon enhanced light-emitting diode Grant 8,338,819 - Lu , et al. December 25, 2 | 2012-12-25 |
Surface plasmon enhanced light-emitting diode App 20110233514 - Lu; Cheng-Hsueh ;   et al. | 2011-09-29 |
Micro/Nano-Pattern Film Contact Transfer Process App 20080217819 - Lee; Yung-Chun ;   et al. | 2008-09-11 |
uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.
While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.
All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.