loadpatents
Patent applications and USPTO patent grants for Liu; Chang-Miao.The latest application filed is for "semiconductor device with corner isolation protection and methods of forming the same".
Patent | Date |
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Semiconductor Device with Corner Isolation Protection and Methods of Forming the Same App 20220310783 - Chen; Bwo-Ning ;   et al. | 2022-09-29 |
Method Of Forming Transistors Of Different Configurations App 20220310851 - Min; Wei-Lun ;   et al. | 2022-09-29 |
Doping for semiconductor device with conductive feature Grant 11,450,741 - Liu , et al. September 20, 2 | 2022-09-20 |
Isolation structures in multi-gate semiconductor devices and methods of fabricating the same Grant 11,444,179 - Wu , et al. September 13, 2 | 2022-09-13 |
Integrated Circuit Structure with Source/Drain Spacers App 20220285545 - Liu; Ko-Cheng ;   et al. | 2022-09-08 |
Integrated circuits with channel-strain liner Grant 11,430,890 - Wu , et al. August 30, 2 | 2022-08-30 |
Method Of Manufacturing Field Effect Transistor With Spacer Structure App 20220262918 - Min; Wei-Lun ;   et al. | 2022-08-18 |
Semiconductor Device Having Contact Feature And Method Of Fabricating The Same App 20220238661 - WU; Xusheng ;   et al. | 2022-07-28 |
Semiconductor device with air gaps between metal gates and method of forming the same Grant 11,387,146 - Min , et al. July 12, 2 | 2022-07-12 |
Method of forming transistors of different configurations Grant 11,362,217 - Min , et al. June 14, 2 | 2022-06-14 |
FinFET having fluorine-doped gate sidewall spacers Grant 11,355,615 - Min , et al. June 7, 2 | 2022-06-07 |
Method Of Forming Transistors Of Different Configurations App 20220165881 - Min; Wei-Lun ;   et al. | 2022-05-26 |
Semiconductor device having contact feature and method of fabricating the same Grant 11,302,784 - Wu , et al. April 12, 2 | 2022-04-12 |
Method of Forming a FinFET Device App 20210399221 - Liu; Chang-Miao ;   et al. | 2021-12-23 |
Gate Structures For Semiconductor Devices App 20210391225 - CHENG; Chun-Fai ;   et al. | 2021-12-16 |
Dielectric Fins With Air Gap And Backside Self-aligned Contact App 20210376071 - Liu; Ko-Cheng ;   et al. | 2021-12-02 |
Dielectric Constant Reduction Of Gate Spacer App 20210359105 - WU; Xu-Sheng ;   et al. | 2021-11-18 |
Semiconductor Device And Method For Manufacturing The Same App 20210358814 - CHEN; Bwo-Ning ;   et al. | 2021-11-18 |
Gate cut dielectric feature and method of forming the same Grant 11,145,650 - Wu , et al. October 12, 2 | 2021-10-12 |
Methods Of Forming A Finfet Device App 20210313514 - Liu; Chang-Miao ;   et al. | 2021-10-07 |
Methods of forming a FinFET device Grant 11,139,432 - Liu , et al. October 5, 2 | 2021-10-05 |
Multi-layer fin structure Grant 11,133,386 - Chen , et al. September 28, 2 | 2021-09-28 |
Semiconductor device with air spacer and stress liner Grant 11,121,236 - Wu , et al. September 14, 2 | 2021-09-14 |
Isolation Structures In Multi-Gate Semiconductor Devices And Methods Of Fabricating The Same App 20210273078 - Wu; Xusheng ;   et al. | 2021-09-02 |
Gate structures for semiconductor devices Grant 11,107,736 - Cheng , et al. August 31, 2 | 2021-08-31 |
Semiconductor device and method for manufacturing the same Grant 11,081,401 - Chen , et al. August 3, 2 | 2021-08-03 |
Dielectric constant reduction of gate spacer Grant 11,075,283 - Wu , et al. July 27, 2 | 2021-07-27 |
Field Effect Transistor And Method Of Manufacturing The Same App 20210226030 - Min; Wei-Lun ;   et al. | 2021-07-22 |
Semiconductor Device And Method For Manufacturing The Same App 20210166978 - CHEN; Bwo-Ning ;   et al. | 2021-06-03 |
Semiconductor Device Structure With Metal Gate Stack App 20210119015 - WU; Xusheng ;   et al. | 2021-04-22 |
Gate Cut Dielectric Feature and Method of Forming the Same App 20210118875 - Wu; Xusheng ;   et al. | 2021-04-22 |
Devices with Strained Isolation Features App 20210104631 - Wu; Xusheng ;   et al. | 2021-04-08 |
Semiconductor Device with Air Gaps Between Metal Gates and Method of Forming the Same App 20210098309 - Min; Wei-Lun ;   et al. | 2021-04-01 |
Stress-Inducing Silicon Liner in Semiconductor Devices App 20210098603 - Chen; Bwo-Ning ;   et al. | 2021-04-01 |
Air Spacer Formation for Semiconductor Devices App 20210090959 - Min; Wei-Lun ;   et al. | 2021-03-25 |
Integrated Circuits with Channel-Strain Liner App 20210083113 - Wu; Xusheng ;   et al. | 2021-03-18 |
Multi-Layer Fin Structure App 20210066457 - Chen; Bwo-Ning ;   et al. | 2021-03-04 |
Structure and formation method of semiconductor device with metal gate stack Grant 10,879,373 - Wu , et al. December 29, 2 | 2020-12-29 |
Devices with Strained Isolation Features App 20200395480 - Wu; Xusheng ;   et al. | 2020-12-17 |
Devices with strained isolation features Grant 10,868,174 - Wu , et al. December 15, 2 | 2020-12-15 |
Integrated circuits with channel-strain liner Grant 10,840,375 - Wu , et al. November 17, 2 | 2020-11-17 |
Structure And Formation Method Of Semiconductor Device With Metal Gate Stack App 20200343362 - WU; Xusheng ;   et al. | 2020-10-29 |
Dielectric Constant Reduction Of Gate Spacer App 20200135887 - WU; Xu-Sheng ;   et al. | 2020-04-30 |
Semiconductor Device With Air Spacer And Stress Liner App 20200105909 - Wu; Xusheng ;   et al. | 2020-04-02 |
Integrated Circuits with Channel-Strain Liner App 20200006558 - Wu; Xusheng ;   et al. | 2020-01-02 |
Doping for semiconductor device with conductive feature Grant 10,347,720 - Liu , et al. July 9, 2 | 2019-07-09 |
Doping for Semiconductor Device with Conductive Feature App 20190131399 - LIU; Su-Hao ;   et al. | 2019-05-02 |
Asymmetric high-voltage metal-oxide-semiconductor device App 20030089960 - Liu, Chang-Miao | 2003-05-15 |
Method for making a HVMOS transistor Grant 6,333,234 - Liu December 25, 2 | 2001-12-25 |
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