Lipkin; Lori A.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Lipkin; Lori A..The latest application filed is for "methods of fabricating high voltage, high temperature capacitor and interconnection structures".

Company Profile

0.11.8

Lipkin; Lori A. - Raleigh NC

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment Grant 7,067,176 - Das , et al. June 27, 2	2006-06-27
Methods of fabricating high voltage, high temperature capacitor and interconnection structures Grant 6,998,322 - Das , et al. February 14, 2	2006-02-14
High voltage, high temperature capacitor and interconnection structures Grant 6,972,436 - Das , et al. December 6, 2	2005-12-06
Silicon Carbide Power Metal-oxide Semiconductor Field Effect Transistors Having A Shorting Channel And Methods Of Fabricating Silicon Carbide Metal-oxide Semiconductor Field Effect Transistors Having A Shorting Channel Grant 6,956,238 - Ryu , et al. October 18, 2	2005-10-18
Method of N2O growth of an oxide layer on a silicon carbide layer Grant 6,767,843 - Lipkin , et al. July 27, 2	2004-07-27
Methods of fabricating high voltage, high temperature capacitor and interconnection structures App 20030160274 - Das, Mrinal Kanti ; et al.	2003-08-28
Method of N2O annealing an oxide layer on a silicon carbide layer Grant 6,610,366 - Lipkin August 26, 2	2003-08-26
Layered dielectric on silicon carbide semiconductor structures Grant 6,528,373 - Lipkin , et al. March 4, 2	2003-03-04
Method Of N2o Annealing An Oxide Layer On A Silicon Carbide Layer App 20020172774 - Lipkin, Lori A.	2002-11-21
Layered dielectric on silicon carbide semiconductor structures App 20020153594 - Lipkin, Lori A. ; et al.	2002-10-24
Layered dielectric on silicon carbide semiconductor structures Grant 6,437,371 - Lipkin , et al. August 20, 2	2002-08-20
Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment App 20020102358 - Das, Mrinal Kanti ; et al.	2002-08-01
Method of N2O growth of an oxide layer on a silicon carbide layer App 20020072247 - Lipkin, Lori A. ; et al.	2002-06-13
Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel App 20020038891 - Ryu, Sei-Hyung ; et al.	2002-04-04
High voltage, high temperature capacitor structures and methods of fabricating same App 20020030191 - Das, Mrinal Kanti ; et al.	2002-03-14
Silicon carbide CMOS devices Grant 6,344,663 - Slater, Jr. , et al. February 5, 2	2002-02-05
Layered dielectric on silicon carbide semiconductor structures App 20010009788 - Lipkin, Lori A. ; et al.	2001-07-26
Layered dielectric on silicon carbide semiconductor structures Grant 6,246,076 - Lipkin , et al. June 12, 2	2001-06-12
Process for reducing defects in oxide layers on silicon carbide Grant 5,972,801 - Lipkin , et al. October 26, 1	1999-10-26

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