Lin; Ming-Jang

Patent Applications and Registrations

Patent applications and USPTO patent grants for Lin; Ming-Jang.The latest application filed is for "semiconductor device".

Company Profile

0.6.13

Lin; Ming-Jang - Hsinchu City TW
Lin; Ming-Jang - Hsinchu TW
Lin; Ming-Jang - Taichung TW
Lin; Ming-Jang - Taiping Shiang TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor Device App 20130200499 - Liaw; Chorng-Wei ; et al.	2013-08-08
Super junction semiconductor device Grant 8,138,047 - Lin March 20, 2	2012-03-20
Super Junction Semiconductor Device App 20090250727 - LIN; MING-JANG	2009-10-08
Method for Manufacturing a Trench Power Transistor App 20090117700 - Lin; Wei-Chieh ; et al.	2009-05-07
Power Transistor Capable of Decreasing Capacitance between Gate and Drain App 20090114983 - Lin; Wei-Chieh ; et al.	2009-05-07
Semiconductor Process for Trench Power MOSFET App 20090061584 - Lin; Wei-Chieh ; et al.	2009-03-05
ESD protection device App 20070181948 - Liaw; Chorng-Wei ; et al.	2007-08-09
Gate contact structure for a power device App 20070114601 - Lin; Wei-Jye ; et al.	2007-05-24
Contact process and structure for a semiconductor device Grant 7,105,410 - Lin , et al. September 12, 2	2006-09-12
Contact process and structure for a semiconductor device App 20050224869 - Lin, Wei-Jye ; et al.	2005-10-13
Power chip set for a switching mode power supply having a device for providing a drive signal to a control unit upon startup Grant 6,888,203 - Liaw , et al. May 3, 2	2005-05-03
Butting contact structure and method incorporating with a silicide inserted between a contact region and a conductor for a small contact window App 20040195689 - Liaw, Chorng-Wei ; et al.	2004-10-07
Process for enhancement of voltage endurance and reduction of parasitic capacitance for a trench power MOSFET Grant 6,800,509 - Lin , et al. October 5, 2	2004-10-05
Butting contact structure and method incorporating with a silicide inserted between a contact region and a conductor for a small contact window App 20030141555 - Liaw, Chorng-Wei ; et al.	2003-07-31
Power chip set for a switching mode power supply having a device for providing a drive signal to a control unit upon startup App 20030117825 - Liaw, Chorng-Wei ; et al.	2003-06-26
Split buried layer for high voltage LDMOS transistor App 20020053695 - Liaw, Chorng-Wei ; et al.	2002-05-09
Power chip set for a switching mode power supply having a device for providing a drive signal to a control unit upon startup App 20010046147 - Liaw, Chorng-Wei ; et al.	2001-11-29
Power chip set for a switching mode power supply having a device for providing a drive signal to a control unit upon startup Grant 6,259,618 - Liaw , et al. July 10, 2	2001-07-10
Latch-up controllable insulated gate bipolar transistor Grant 6,137,122 - Liaw , et al. October 24, 2	2000-10-24

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