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name:-0.015504121780396
name:-0.0026030540466309
Lin; Long-Shih Patent Filings

Lin; Long-Shih

Patent Applications and Registrations

Patent applications and USPTO patent grants for Lin; Long-Shih.The latest application filed is for "method of making bipolar transistor".

Company Profile
2.13.13
  • Lin; Long-Shih - Zhubei TW
  • LIN; Long-Shih - Zhubei City TW
  • Lin; Long Shih - Jhubei TW
  • Lin; Long Shih - Hsinchu County TW
  • Lin; Long Shih - Hsinchu TW
  • Lin; Long Shih - Jhubei City TW
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Method of making bipolar transistor
Grant 11,233,121 - Yang , et al. January 25, 2
2022-01-25
Method Of Making Bipolar Transistor
App 20200312957 - YANG; Fu-Hsiung ;   et al.
2020-10-01
Method of making bipolar transistor
Grant 10,686,036 - Yang , et al.
2020-06-16
Method for forming a multiple layer epitaxial layer on a wafer
Grant 10,002,761 - Lin , et al. June 19, 2
2018-06-19
Method of fabricating a lateral insulated gate bipolar transistor
Grant 9,853,121 - Lin , et al. December 26, 2
2017-12-26
Method Of Making Bipolar Transistor
App 20170236904 - YANG; Fu-Hsiung ;   et al.
2017-08-17
Partial SOI on power device for breakdown voltage improvement
Grant 9,698,024 - Lin , et al. July 4, 2
2017-07-04
Bipolar transistor structure having split collector region and method of making the same
Grant 9,647,065 - Yang , et al. May 9, 2
2017-05-09
Multiple Layer Substrate
App 20150311070 - Lin; Long-Shih ;   et al.
2015-10-29
Method Of Fabricating A Lateral Insulated Gate Bipolar Transistor
App 20150303276 - LIN; Long-Shih ;   et al.
2015-10-22
Multiple layer substrate
Grant 9,111,898 - Lin , et al. August 18, 2
2015-08-18
Lateral insulated gate bipolar transistor structure with low parasitic BJT gain and stable threshold voltage
Grant 9,076,837 - Lin , et al. July 7, 2
2015-07-07
Bipolar Transistor Structure Having Split Collector Region And Method Of Making The Same
App 20150108542 - YANG; Fu-Hsiung ;   et al.
2015-04-23
Partial Soi On Power Device For Breakdown Voltage Improvement
App 20140322871 - Lin; Long-Shih ;   et al.
2014-10-30
Multiple Layer Substrate
App 20140231964 - Lin; Long-Shih ;   et al.
2014-08-21
Partial SOI on power device for breakdown voltage improvement
Grant 8,779,555 - Lin , et al. July 15, 2
2014-07-15
Partial Soi On Power Device For Breakdown Voltage Improvement
App 20140159103 - Lin; Long-Shih ;   et al.
2014-06-12
Lateral Insulated Gate Bipolar Transistor Structure With Low Parasitic Bjt Gain And Stable Threshold Voltage
App 20140008723 - LIN; Long-Shih ;   et al.
2014-01-09
Schottky device and process of making the same comprising a geometry gap
Grant 8,125,008 - Chiang , et al. February 28, 2
2012-02-28
Integrated circuit with high voltage junction structure
Grant 7,732,890 - Chiang , et al. June 8, 2
2010-06-08
Voltage-clipping device with high breakdown voltage
Grant 7,655,990 - Chiang , et al. February 2, 2
2010-02-02
Schottky device and process of making the same
App 20080116539 - Chiang; Chiu-Chih ;   et al.
2008-05-22
Integrated Circuit With High Voltage Junction Structure
App 20080001195 - Chiang; Chiu-Chih ;   et al.
2008-01-03
Voltage-clipping Device With High Breakdown Voltage
App 20070290276 - Chiang; Chiu-Chih ;   et al.
2007-12-20

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