loadpatents
Patent applications and USPTO patent grants for Lin; Jyh-Feng.The latest application filed is for "novel polysilicon load for 4t sram operating at cold temperatures".
Patent | Date |
---|---|
IMD oxide crack monitor pattern and design rule Grant 6,613,592 - Chen , et al. September 2, 2 | 2003-09-02 |
Novel polysilicon load for 4T SRAM operating at cold temperatures App 20010010937 - Lin, Jyh-Feng ;   et al. | 2001-08-02 |
Method for making improved polysilicon FET gate electrodes having composite sidewall spacers using a trapezoidal-shaped insulating layer for more reliable integrated circuits Grant 6,040,223 - Liu , et al. March 21, 2 | 2000-03-21 |
Method for improving the endurance of split gate flash EEPROM devices via the addition of a shallow source side implanted region Grant 5,915,178 - Chiang , et al. June 22, 1 | 1999-06-22 |
Surface light emitting diode with electrically conductive window layer Grant RE35,665 - Lin , et al. November 18, 1 | 1997-11-18 |
Surface light emitting diode with electrically conductive window layer Grant 5,481,122 - Jou , et al. January 2, 1 | 1996-01-02 |
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