Lin; Jengping
Patent Applications and Registrations
Patent applications and USPTO patent grants for Lin; Jengping.The latest application filed is for "fet device with double spacer".
- Lin; Jengping - Taiwan CN
- Lin; Jengping - Tayuan Village TW
- Lin; Jengping - Taoyuan Hsien TW
| Patent | Date |
|---|---|
| Fet device with double spacer Grant 5,663,586 - Lin September 2, 1 | 1997-09-02 |
| Method of fabricating FET device with double spacer Grant 5,641,698 - Lin June 24, 1 | 1997-06-24 |
| Use of oxide spacers formed by liquid phase deposition Grant 5,612,239 - Lin , et al. March 18, 1 | 1997-03-18 |
| Method of fabricating an asymmetric lightly doped drain transistor device Grant 5,510,279 - Chien , et al. April 23, 1 | 1996-04-23 |
| Method for selective tungsten sidewall and bottom contact formation Grant 5,504,038 - Chien , et al. April 2, 1 | 1996-04-02 |
| Method for fabricating gate oxide layers of different thicknesses Grant 5,502,009 - Lin March 26, 1 | 1996-03-26 |
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