Lin; Hung-Chen
Patent Applications and Registrations
Patent applications and USPTO patent grants for Lin; Hung-Chen.The latest application filed is for "deep trench surrounded mosfet with planar mos gate".
- Lin; Hung-Chen - Hsinchu TW
- Lin; Hung-Chen - Tainan N/A TW
| Patent | Date |
|---|---|
| Deep trench surrounded MOSFET with planar MOS gate Grant 11,456,389 - Dun , et al. September 27, 2 | 2022-09-27 |
| Double trench MOSFET with trench gate Grant 11,322,625 - Dun , et al. May 3, 2 | 2022-05-03 |
| Wax warmer Grant D943,756 - Lin February 15, 2 | 2022-02-15 |
| Double Trench MOSFET With Trench Gate App 20200373439 - Dun; Haiping ; et al. | 2020-11-26 |
| Deep Trench Surrounded MOSFET with Planar MOS Gate App 20200373438 - Dun; Haiping ; et al. | 2020-11-26 |
| Methods Of Manufacturing A Deep Trench Super Junction MOSFET App 20200335580 - Dun; Haiping ; et al. | 2020-10-22 |
| Deep trench MOS barrier junction all around rectifier and MOSFET Grant 10,770,599 - Dun , et al. Sep | 2020-09-08 |
| Photoresist recycling apparatus Grant 10,663,865 - Lin , et al. | 2020-05-26 |
| Photoresist Recycling Apparatus App 20200004157 - Lin; Chia-Ren ; et al. | 2020-01-02 |
| Method Of Manufacturing A Deep Trench Super Junction MOSFET App 20190326389 - Dun; Haiping ; et al. | 2019-10-24 |
| High speed Schottky rectifier Grant 10,304,971 - Yu , et al. | 2019-05-28 |
| Deep Trench MOS Barrier Junction All Around Rectifier and MOSFET App 20180138322 - Dun; Haiping ; et al. | 2018-05-17 |
| High Speed Schottky Rectifier App 20180019348 - Yu; Ho-Yuan ; et al. | 2018-01-18 |
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