loadpatents
Patent applications and USPTO patent grants for Lin; Hsien-Hsin.The latest application filed is for "semiconductor device and method of forming the same".
Patent | Date |
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Devices with strained source/drain structures and method of forming the same Grant 11,411,098 - Kwok , et al. August 9, 2 | 2022-08-09 |
Semiconductor Device And Method Of Forming The Same App 20220059429 - Yang; Ming-Tzong ;   et al. | 2022-02-24 |
Self-aligned contact and method for forming the same Grant 10,957,589 - Lin March 23, 2 | 2021-03-23 |
Thermal via arrangement for multi-channel semiconductor device Grant 10,741,469 - Lin , et al. A | 2020-08-11 |
Self-aligned Contact And Method For Forming The Same App 20190164830 - Lin; Hsien-Hsin | 2019-05-30 |
Devices With Strained Source/drain Structures And Method Of Forming The Same App 20180190788 - KWOK; Tsz-Mei ;   et al. | 2018-07-05 |
Thermal Via Arrangement For Multi-channel Semiconductor Device App 20180138104 - LIN; Hsien-Hsin ;   et al. | 2018-05-17 |
Devices with strained source/drain structures Grant 9,911,826 - Kwok , et al. March 6, 2 | 2018-03-06 |
Methods for manufacturing devices with source/drain structures Grant 9,842,910 - Kwok , et al. December 12, 2 | 2017-12-12 |
Epitaxy profile engineering for FinFETs Grant 9,666,691 - Su , et al. May 30, 2 | 2017-05-30 |
Method of fabricating an integrated circuit device Grant 9,564,509 - Yeh , et al. February 7, 2 | 2017-02-07 |
Source/drain formation and structure Grant 9,537,004 - Wu , et al. January 3, 2 | 2017-01-03 |
Controlling the shape of source/drain regions in FinFETs Grant 9,515,187 - Kwok , et al. December 6, 2 | 2016-12-06 |
Method for improving selectivity of epi process Grant 9,373,695 - Chen , et al. June 21, 2 | 2016-06-21 |
Method for incorporating impurity element in EPI silicon process Grant 9,356,150 - Su , et al. May 31, 2 | 2016-05-31 |
High performance strained source-drain structure and method of fabricating the same Grant 9,293,537 - Sung , et al. March 22, 2 | 2016-03-22 |
Dual epitaxial process for a finFET device Grant 9,224,737 - Chen , et al. December 29, 2 | 2015-12-29 |
Method For Incorporating Impurity Element In Epi Silicon Process App 20150364604 - Su; Chien-Chang ;   et al. | 2015-12-17 |
Method for incorporating impurity element in EPI silicon process Grant 9,117,905 - Su , et al. August 25, 2 | 2015-08-25 |
Controlling the Shape of Source/Drain Regions in FinFETs App 20150137183 - Kwok; Tsz-Mei ;   et al. | 2015-05-21 |
Dual Epitaxial Process For A Finfet Device App 20150115322 - CHEN; Hung-Kai ;   et al. | 2015-04-30 |
Method Of Fabricating An Integrated Circuit Device App 20150118807 - YEH; Ming-Hsi ;   et al. | 2015-04-30 |
Controlling the shape of source/drain regions in FinFETs Grant 8,975,144 - Kwok , et al. March 10, 2 | 2015-03-10 |
Dual epitaxial process for a finFET device Grant 8,937,353 - Chen , et al. January 20, 2 | 2015-01-20 |
Method of fabricating an integrated circuit device Grant 8,921,177 - Yeh , et al. December 30, 2 | 2014-12-30 |
Method of fabricating an integrated circuit device Grant 08921177 - | 2014-12-30 |
High Performance Strained Source-Drain Structure and Method of Fabricating the Same App 20140319581 - Sung; Hsueh-Chang ;   et al. | 2014-10-30 |
Methods For Manufacturing Devices With Source/drain Structures App 20140308790 - KWOK; Tsz-Mei ;   et al. | 2014-10-16 |
Silicon layer for stopping dislocation propagation Grant 8,846,461 - Lin , et al. September 30, 2 | 2014-09-30 |
Method of manufacturing strained source/drain structures Grant 8,835,982 - Kwok , et al. September 16, 2 | 2014-09-16 |
Semiconductor devices with strained source/drain structures Grant 8,796,788 - Kwok , et al. August 5, 2 | 2014-08-05 |
Devices With Strained Source/drain Structures App 20140209978 - KWOK; Tsz-Mei ;   et al. | 2014-07-31 |
Method of fabricating strained structure in semiconductor device Grant 8,765,556 - Hsu , et al. July 1, 2 | 2014-07-01 |
High performance strained source-drain structure and method of fabricating the same Grant 8,709,897 - Sung , et al. April 29, 2 | 2014-04-29 |
Method for fabricating a FinFET device Grant 8,652,894 - Lin , et al. February 18, 2 | 2014-02-18 |
Method For Improving Selectivity Of EPI Process App 20130299876 - Chen; Kuan-Yu ;   et al. | 2013-11-14 |
Transistors having a composite strain structure, integrated circuits, and fabrication methods thereof Grant 8,558,289 - Cheng , et al. October 15, 2 | 2013-10-15 |
Method for improving selectivity of epi process Grant 8,487,354 - Chen , et al. July 16, 2 | 2013-07-16 |
Device With Self Aligned Stressor And Method Of Making Same App 20130161650 - LAI; Kao-Ting ;   et al. | 2013-06-27 |
Silicon Layer for Stopping Dislocation Propagation App 20130122674 - Lin; Hsien-Hsin ;   et al. | 2013-05-16 |
Controlling the Shape of Source/Drain Regions in FinFETs App 20130089959 - Kwok; Tsz-Mei ;   et al. | 2013-04-11 |
Device with self aligned stressor and method of making same Grant 8,404,538 - Lai , et al. March 26, 2 | 2013-03-26 |
Method For Fabricating A Finfet Device App 20130071980 - Lin; Hsien-Hsin ;   et al. | 2013-03-21 |
Controlling the shape of source/drain regions in FinFETs Grant 8,362,575 - Kwok , et al. January 29, 2 | 2013-01-29 |
Method Of Fabricating An Integrated Circuit Device App 20130023094 - YEH; Ming-Hsi ;   et al. | 2013-01-24 |
Method of fabricating epitaxial structures Grant 8,357,574 - Yeh , et al. January 22, 2 | 2013-01-22 |
Epitaxy Profile Engineering for FinFETs App 20130001705 - Su; Chien-Chang ;   et al. | 2013-01-03 |
Silicon layer for stopping dislocation propagation Grant 8,344,447 - Lin , et al. January 1, 2 | 2013-01-01 |
Method of forming strained structures with compound profiles in semiconductor devices Grant 8,343,872 - Sung , et al. January 1, 2 | 2013-01-01 |
Source/Drain Formation and Structure App 20120299121 - Wu; Chii-Ming ;   et al. | 2012-11-29 |
Method of fabricating a FinFET device Grant 8,310,013 - Lin , et al. November 13, 2 | 2012-11-13 |
Epitaxy profile engineering for FinFETs Grant 8,263,451 - Su , et al. September 11, 2 | 2012-09-11 |
Method Of Manufacturing Strained Source/drain Structures App 20120205715 - KWOK; Tsz-Mei ;   et al. | 2012-08-16 |
Method Of Manufacturing Strained Source/drain Structures App 20120181625 - KWOK; Tsz-Mei ;   et al. | 2012-07-19 |
High Performance Strained Source-drain Structure And Method Of Fabricating The Same App 20120132957 - Sung; Hsueh-Chang ;   et al. | 2012-05-31 |
Method Of Fabricating Epitaxial Structures App 20120094448 - YEH; Ming-Hsi ;   et al. | 2012-04-19 |
Dual Epitaxial Process For A Finfet Device App 20110210393 - Chen; Hung-Kai ;   et al. | 2011-09-01 |
Epitaxy Profile Engineering for FinFETs App 20110210404 - Su; Chien-Chang ;   et al. | 2011-09-01 |
Method Of Fabricating A Finfet Device App 20110193141 - Lin; Hsien-Hsin ;   et al. | 2011-08-11 |
Method For Incorporating Impurity Element In Epi Silicon Process App 20110147846 - Su; Chien-Chang ;   et al. | 2011-06-23 |
Method Of Forming Strained Structures In Semiconductor Devices App 20110108894 - Sung; Hsueh-Chang ;   et al. | 2011-05-12 |
Isolation Structure For Semiconductor Device App 20110084355 - Lin; Hsien-Hsin ;   et al. | 2011-04-14 |
Device With Self Aligned Stressor And Method Of Making Same App 20110079820 - Lai; Kao-Ting ;   et al. | 2011-04-07 |
Controlling the Shape of Source/Drain Regions in FinFETs App 20110073952 - Kwok; Tsz-Mei ;   et al. | 2011-03-31 |
Method For Improving Selectivity Of Epi Process App 20110042729 - Chen; Kuan-Yu ;   et al. | 2011-02-24 |
Transistors Having A Composite Strain Structure, Integrated Circuits, And Fabrication Methods Thereof App 20110024801 - CHENG; Chun-Fai ;   et al. | 2011-02-03 |
SiGe selective growth without a hard mask Grant 7,494,884 - Lin , et al. February 24, 2 | 2009-02-24 |
Silicon layer for stopping dislocation propagation App 20080246057 - Lin; Hsien-Hsin ;   et al. | 2008-10-09 |
SiGe selective growth without a hard mask App 20080083948 - Lin; Hsien-Hsin ;   et al. | 2008-04-10 |
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