loadpatents
name:-0.00046491622924805
name:-0.015083074569702
name:-0.0005030632019043
Lin; Hengyang Patent Filings

Lin; Hengyang

Patent Applications and Registrations

Patent applications and USPTO patent grants for Lin; Hengyang.The latest application filed is for "bipolar transistor and method of forming the bipolar transistor with a backside contact".

Company Profile
0.11.0
  • Lin; Hengyang - San Ramon CA
  • Lin; Hengyang - San Jose CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Bipolar transistor and method of forming the bipolar transistor with a backside contact
Grant 7,863,644 - Yegnashankaran , et al. January 4, 2
2011-01-04
Bit line sharing and word line load reduction for low AC power SRAM architecture
Grant 7,286,383 - Poplevine , et al. October 23, 2
2007-10-23
Method of hot electron injection programming of a non-volatile memory (NVM) cell array in a single cycle
Grant 7,239,558 - Poplevine , et al. July 3, 2
2007-07-03
World-wide distributed testing for integrated circuits
Grant 7,188,044 - Yegnashankaran , et al. March 6, 2
2007-03-06
Non-volatile memory cell with improved programming technique
Grant 7,167,392 - Poplevine , et al. January 23, 2
2007-01-23
Reverse fowler-nordheim tunneling programming for non-volatile memory cell
Grant 7,164,606 - Poplevine , et al. January 16, 2
2007-01-16
Low power ROM architecture
Grant 7,126,866 - Poplevine , et al. October 24, 2
2006-10-24
Low AC power SRAM architecture
Grant 7,061,792 - Poplevine , et al. June 13, 2
2006-06-13
High density ROM architecture
Grant 6,642,587 - Poplevine , et al. November 4, 2
2003-11-04
High density ROM architecture with inversion of programming
Grant 6,618,282 - Poplevine , et al. September 9, 2
2003-09-09
Low power static RAM architecture
Grant 6,563,730 - Poplevine , et al. May 13, 2
2003-05-13

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