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Patent applications and USPTO patent grants for Lin; Hengyang.The latest application filed is for "bipolar transistor and method of forming the bipolar transistor with a backside contact".
Patent | Date |
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Bipolar transistor and method of forming the bipolar transistor with a backside contact Grant 7,863,644 - Yegnashankaran , et al. January 4, 2 | 2011-01-04 |
Bit line sharing and word line load reduction for low AC power SRAM architecture Grant 7,286,383 - Poplevine , et al. October 23, 2 | 2007-10-23 |
Method of hot electron injection programming of a non-volatile memory (NVM) cell array in a single cycle Grant 7,239,558 - Poplevine , et al. July 3, 2 | 2007-07-03 |
World-wide distributed testing for integrated circuits Grant 7,188,044 - Yegnashankaran , et al. March 6, 2 | 2007-03-06 |
Non-volatile memory cell with improved programming technique Grant 7,167,392 - Poplevine , et al. January 23, 2 | 2007-01-23 |
Reverse fowler-nordheim tunneling programming for non-volatile memory cell Grant 7,164,606 - Poplevine , et al. January 16, 2 | 2007-01-16 |
Low power ROM architecture Grant 7,126,866 - Poplevine , et al. October 24, 2 | 2006-10-24 |
Low AC power SRAM architecture Grant 7,061,792 - Poplevine , et al. June 13, 2 | 2006-06-13 |
High density ROM architecture Grant 6,642,587 - Poplevine , et al. November 4, 2 | 2003-11-04 |
High density ROM architecture with inversion of programming Grant 6,618,282 - Poplevine , et al. September 9, 2 | 2003-09-09 |
Low power static RAM architecture Grant 6,563,730 - Poplevine , et al. May 13, 2 | 2003-05-13 |
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