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Lin; Chang-Song Patent Filings

Lin; Chang-Song

Patent Applications and Registrations

Patent applications and USPTO patent grants for Lin; Chang-Song.The latest application filed is for "integrated circuit capable of locating failure process layers".

Company Profile
0.8.4
  • Lin; Chang-Song - Hsinchu TW
  • Lin; Chang-Song - Hsinchu City TW
  • Lin; Chang Song - Hsin-Chu TW
  • Lin; Chang-Song - Da-Chi Village TW
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Integrated circuit capable of locating failure process layers
Grant 7,464,357 - Cheng , et al. December 9, 2
2008-12-09
Integrated circuit capable of locating failure process layers
App 20060123375 - Cheng; An-Ru Andrew ;   et al.
2006-06-08
Integrated circuit capable of locating failure process layers
Grant 7,036,099 - Cheng , et al. April 25, 2
2006-04-25
Integrated circuit capable of locating failure process layers
App 20050022142 - Cheng, An-Ru Andrew ;   et al.
2005-01-27
Method to fabricate a non-smiling effect structure in split-gate flash with self-aligned isolation
Grant 6,753,569 - Lin , et al. June 22, 2
2004-06-22
Modified nitride spacer for solving charge retention issue in floating gate memory cell
App 20020142535 - Ho, Ming-Chou ;   et al.
2002-10-03
Modified nitride spacer for solving charge retention issue in floating gate memory cell
Grant 6,417,046 - Ho , et al. July 9, 2
2002-07-09
Method to fabricate a non-smiling effect structure in split-gate flash with self-aligned isolation
App 20020055205 - Lin, Yai-Fen ;   et al.
2002-05-09
Use of a metal contact structure to increase control gate coupling capacitance for a single polysilicon non-volatile memory cell
Grant 6,117,732 - Chu , et al. September 12, 2
2000-09-12
Method to fabricate sharp tip of poly in split gate flash
Grant 6,090,668 - Lin , et al. July 18, 2
2000-07-18
Method for alignment mark regeneration
Grant 5,872,042 - Hsu , et al. February 16, 1
1999-02-16
Two-step planarization process using chemical-mechanical polishing and reactive-ion-etching
Grant 5,747,382 - Huang , et al. May 5, 1
1998-05-05

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