Lim; Tian-Hoe

Patent Applications and Registrations

Patent applications and USPTO patent grants for Lim; Tian-Hoe.The latest application filed is for "method of decreasing the k value in sioc layer deposited by chemical vapor deposition".

Company Profile

0.11.4

Lim; Tian-Hoe - Santa Clara CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method of decreasing the k value in sioc layer deposited by chemical vapor deposition Grant 7,074,708 - Gaillard , et al. July 11, 2	2006-07-11
Method of decreasing the K value in SIOC layer deposited by chemical vapor deposition Grant 6,784,119 - Gaillard , et al. August 31, 2	2004-08-31
Method of decreasing the K value in SIOC layer deposited by chemical vapor deposition App 20040166665 - Gaillard, Frederic ; et al.	2004-08-26
Method of decreasing the K value in SIOC layer deposited by chemical vapor deposition App 20040029400 - Gaillard, Frederic ; et al.	2004-02-12
Process for forming a low dielectric constant carbon-containing film Grant 6,632,478 - Gaillard , et al. October 14, 2	2003-10-14
Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition Grant 6,627,532 - Gaillard , et al. September 30, 2	2003-09-30
UV radiation source for densification of CVD carbon-doped silicon oxide films Grant 6,614,181 - Harvey , et al. September 2, 2	2003-09-02
Surface treatment of c-doped SiO2 film to enhance film stability during O2 ashing Grant 6,583,497 - Xia , et al. June 24, 2	2003-06-24
Method of depositing organosilicate layers Grant 6,573,196 - Gaillard , et al. June 3, 2	2003-06-03
Method for densification of CVD carbon-doped silicon oxide films through UV irradiation Grant 6,566,278 - Harvey , et al. May 20, 2	2003-05-20
Surface treatment of c-doped SiO2 film to enhance film stability during 02 ashing App 20030008528 - Xia, Li-Qun ; et al.	2003-01-09
Methods for forming a low dielectric constant carbon-containing film, and films produced thereby App 20020164429 - Gaillard, Frederic ; et al.	2002-11-07
Surface treatment of C-doped SiO2 film to enhance film stability during O2 ashing Grant 6,465,372 - Xia , et al. October 15, 2	2002-10-15
Method for using bypass lines to stabilize gas flow and maintain plasma inside a deposition chamber Grant 6,258,735 - Xia , et al. July 10, 2	2001-07-10
Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process Grant 6,255,222 - Xia , et al. July 3, 2	2001-07-03

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