Lim; Kwanyong

Patent Applications and Registrations

Patent applications and USPTO patent grants for Lim; Kwanyong.The latest application filed is for "gate-to-contact short prevention with an inner spacer".

Company Profile

10.9.19

Lim; Kwanyong - San Diego CA
Lim; Kwanyong - Plano TX
Lim; Kwanyong - Niskayuna NY
Lim; Kwanyong - Nishakuna NY

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Leakage current reduction in polysilicon-on-active-edge structures Grant 11,444,201 - Choi , et al. September 13, 2	2022-09-13
Gate-to-contact Short Prevention With An Inner Spacer App 20220216328 - SUH; Youseok ; et al.	2022-07-07
Three-dimensional (3D), vertically-integrated field-effect transistors (FETs) electrically coupled by integrated vertical FET-to-FET interconnects for complementary metal-oxide semiconductor (CMOS) cell circuits Grant 11,296,083 - Lu , et al. April 5, 2	2022-04-05
INTEGRATING A GATE-ALL-AROUND (GAA) TRANSISTOR WITH A SILICON GERMANIUM (SiGe) HETEROJUNCTION BIPOLAR TRANSISTOR (HBT) App 20210398972 - YANG; Bin ; et al.	2021-12-23
Field effect transistor (FET) comprising channels with silicon germanium (SiGe) Grant 11,145,654 - Lim , et al. October 12, 2	2021-10-12
Transistors In A Layered Arrangement App 20210313326 - LIM; Kwanyong ; et al.	2021-10-07
Leakage Current Reduction In Polysilicon-on-active-edge Structures App 20210305429 - CHOI; Youn Sung ; et al.	2021-09-30
Three-dimensional (3d), Vertically-integrated Field-effect Transistors (fets) Electrically Coupled By Integrated Vertical Fet-to-fet Interconnects For Complementary Metal-oxide Semiconductor (cmos) Cell Circuits App 20210280582 - Lu; Ye ; et al.	2021-09-09
SRAM source-drain structure Grant 11,075,206 - Lim , et al. July 27, 2	2021-07-27
Fin Field-effect Transistor (fet) (finfet) Circuits Employing Replacement N-type Fet (nfet) Source/drain (s/d) To Avoid Or Prevent Short Defects And Related Methods Of Fabrication App 20210143153 - Lim; Kwanyong ; et al.	2021-05-13
FIELD EFFECT TRANSISTOR (FET) COMPRISING CHANNELS WITH SILICON GERMANIUM (SiGe) App 20210118883 - LIM; Kwanyong ; et al.	2021-04-22
Integration of finFET device Grant 10,950,488 - Kim , et al. March 16, 2	2021-03-16
Titanium silicide formation in a narrow source-drain contact Grant 10,854,510 - Sung , et al. December 1, 2	2020-12-01
Inline Monitoring Test Structure App 20200256915 - A1	2020-08-13
High Density Fin Field-effect Transistor (finfet) App 20200251473 - Kind Code	2020-08-06
Sram Source-drain Structure App 20200194440 - LIM; Kwanyong ; et al.	2020-06-18
Systems and methods for fabrication of gated diodes with selective epitaxial growth Grant 10,600,774 - Choi , et al.	2020-03-24
Systems And Methods For Fabrication Of Gated Diodes With Selective Epitaxial Growth App 20190312025 - Choi; Youn Sung ; et al.	2019-10-10
Integration Of Finfet Device App 20190273013 - KIM; Ryoung-han ; et al.	2019-09-05
Design And Integration Of Finfet Device App 20180108564 - KIM; Ryoung-han ; et al.	2018-04-19
Titanium Silicide Formation In A Narrow Source-drain Contact App 20170372949 - Sung; Min Gyu ; et al.	2017-12-28
Reducing risk of punch-through in FinFET semiconductor structure Grant 9,847,333 - Lim , et al. December 19, 2	2017-12-19
Method, Apparatus And System For Fabricating Self-aligned Contact Using Block-type Hard Mask App 20170358585 - Lim; Kwanyong ; et al.	2017-12-14
Titanium silicide formation in a narrow source-drain contact Grant 9,779,987 - Sung , et al. October 3, 2	2017-10-03
Reducing Risk Of Punch-through In Finfet Semiconductor Structure App 20160268260 - LIM; Kwanyong ; et al.	2016-09-15
Hybrid Contacts For Commonly Fabricated Semiconductor Devices Using Same Metal App 20160049401 - SUNG; Min Gyu ; et al.	2016-02-18
Titanium Silicide Formation In A Narrow Source-drain Contact App 20150380304 - Sung; Min Gyu ; et al.	2015-12-31
Design And Integration Of Finfet Device App 20150171217 - KIM; Ryoung-han ; et al.	2015-06-18

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