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name:-0.020637989044189
name:-0.022924900054932
name:-0.017210006713867
Lilienfeld; David Alan Patent Filings

Lilienfeld; David Alan

Patent Applications and Registrations

Patent applications and USPTO patent grants for Lilienfeld; David Alan.The latest application filed is for "systems and methods for junction termination of wide band gap super-junction power devices".

Company Profile
20.20.21
  • Lilienfeld; David Alan - Niskayuna NY
  • Lilienfeld; David Alan - Niskyuna NY
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Semiconductor device and method for reduced bias threshold instability
Grant 11,417,759 - Arthur , et al. August 16, 2
2022-08-16
Systems And Methods For Junction Termination Of Wide Band Gap Super-junction Power Devices
App 20220130953 - Arthur; Stephen Daley ;   et al.
2022-04-28
Systems and methods for junction termination in semiconductor devices
Grant 11,271,076 - Arthur , et al. March 8, 2
2022-03-08
Systems and methods for junction termination of wide band gap super-junction power devices
Grant 11,245,003 - Arthur , et al. February 8, 2
2022-02-08
Systems and methods for unipolar charge balanced semiconductor power devices
Grant 11,233,157 - Arthur , et al. January 25, 2
2022-01-25
Techniques For Fabricating Charge Balanced (cb) Trench-metal-oxide-semiconductor Field-effect Transistor (mosfet) Devices
App 20210288180 - Arthur; Stephen Daley ;   et al.
2021-09-16
Techniques for fabricating planar charge balanced (CB) metal-oxide-semiconductor field-effect transistor (MOSFET) devices
Grant 11,069,772 - Arthur , et al. July 20, 2
2021-07-20
Techniques for fabricating charge balanced (CB) trench-metal-oxide-semiconductor field-effect transistor (MOSFET) devices
Grant 11,056,586 - Arthur , et al. July 6, 2
2021-07-06
Systems and methods for termination in silicon carbide charge balance power devices
Grant 10,957,759 - Arthur , et al. March 23, 2
2021-03-23
Systems And Methods For Termination In Silicon Carbide Charge Balance Power Devices
App 20200203487 - Arthur; Stephen Daley ;   et al.
2020-06-25
Systems And Methods For Junction Termination Of Wide Band Gap Super-junction Power Devices
App 20200203477 - Arthur; Stephen Daley ;   et al.
2020-06-25
Systems And Methods For Junction Termination In Semiconductor Devices
App 20200203476 - Arthur; Stephen Daley ;   et al.
2020-06-25
Techniques For Fabricating Planar Charge Balanced (cb) Metal-oxide-semiconductor Field-effect Transistor (mosfet) Devices
App 20200194546 - Arthur; Stephen Daley ;   et al.
2020-06-18
Super-junction semiconductor device fabrication
Grant 10,636,660 - Ghandi , et al.
2020-04-28
Super-junction Semiconductor Device Fabrication
App 20200105529 - Ghandi; Reza ;   et al.
2020-04-02
Systems And Methods For Unipolar Charge Balanced Semiconductor Power Devices
App 20200105944 - Arthur; Stephen Daley ;   et al.
2020-04-02
Techniques For Fabricating Charge Balanced (cb) Trench-metal-oxide-semiconductor Field-effect Transistor (mosfet) Devices
App 20200105925 - Arthur; Stephen Daley ;   et al.
2020-04-02
High energy ion implantation for junction isolation in silicon carbide devices
Grant 10,608,079 - Ghandi , et al.
2020-03-31
Systems and method for charge balanced semiconductor power devices with fast switching capability
Grant 10,600,649 - Bolotnikov , et al.
2020-03-24
System and method for edge termination of super-junction (SJ) devices
Grant 10,586,846 - Bolotnikov , et al.
2020-03-10
Edge termination designs for silicon carbide super-junction power devices
Grant 10,541,338 - Bolotnikov , et al. Ja
2020-01-21
Semiconductor Device And Method For Reduced Bias Threshold Instability
App 20190363183 - Arthur; Stephen Daley ;   et al.
2019-11-28
High Energy Ion Implantation For Junction Isolation In Silicon Carbide Devices
App 20190245035 - Ghandi; Reza ;   et al.
2019-08-08
Semiconductor device and method for reduced bias threshold instability
Grant 10,367,089 - Arthur , et al. July 30, 2
2019-07-30
System And Method For Edge Termination Of Super-junction (sj) Devices
App 20190140048 - Bolotnikov; Alexander Viktorovich ;   et al.
2019-05-09
Super-junction semiconductor power devices with fast switching capability
Grant 10,243,039 - Bolotnikov , et al.
2019-03-26
Systems And Method For Charge Balanced Semiconductor Power Devices With Fast Switching Capability
App 20190088479 - Bolotnikov; Alexander Viktorovich ;   et al.
2019-03-21
Edge Termination Designs For Silicon Carbide Super-junction Power Devices
App 20190006529 - BOLOTNIKOV; Alexander Viktorovich ;   et al.
2019-01-03
Transient Voltage Suppression Devices With Symmetric Breakdown Characteristics
App 20180190791 - Torres; Victor Mario ;   et al.
2018-07-05
Transient voltage suppression devices with symmetric breakdown characteristics
Grant 10,014,388 - Torres , et al. July 3, 2
2018-07-03
System and method for edge termination of super-junction (SJ) devices
Grant 10,002,920 - Bolotnikov , et al. June 19, 2
2018-06-19
System And Method For Edge Termination Of Super-junction (sj) Devices
App 20180166531 - Bolotnikov; Alexander Viktorovich ;   et al.
2018-06-14
Super-junction Semiconductor Power Devices With Fast Switching Capability
App 20170278924 - Bolotnikov; Alexander Viktorovich ;   et al.
2017-09-28
Active area designs for charge-balanced diodes
Grant 9,704,949 - Ghandi , et al. July 11, 2
2017-07-11
Device having reduced bias temperature instability (BTI)
Grant 9,257,283 - Michael , et al. February 9, 2
2016-02-09
Device Having Reduced Bias Temperature Instability (bti)
App 20140034963 - Michael; Joseph Darryl ;   et al.
2014-02-06
Semiconductor Device And Method For Reduced Bias Threshold Instability
App 20130075756 - Arthur; Stephen Daley ;   et al.
2013-03-28

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