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Lien; Yu-Chung Patent Filings

Lien; Yu-Chung

Patent Applications and Registrations

Patent applications and USPTO patent grants for Lien; Yu-Chung.The latest application filed is for "negative bit line biasing during quick pass write programming".

Company Profile
8.30.22
  • Lien; Yu-Chung - San Jose CA
  • Lien; Yu-Chung - Taoyuan County TW
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Three-dimensional NAND memory device containing two terminal selector and methods of using and making thereof
Grant 11,456,333 - Lien , et al. September 27, 2
2022-09-27
Negative Bit Line Biasing During Quick Pass Write Programming
App 20220284965 - Lien; Yu-Chung ;   et al.
2022-09-08
Controlling timing and ramp rate of program-inhibit voltage signal during programming to optimize peak current
Grant 11,417,400 - Lien , et al. August 16, 2
2022-08-16
Lockout mode for reverse order read operation
Grant 11,398,280 - Lien , et al. July 26, 2
2022-07-26
Memory Apparatus And Method Of Operation Using Plane Dependent Ramp Rate And Timing Control For Program Operation
App 20220223214 - Lien; Yu-Chung ;   et al.
2022-07-14
Dynamic staggering for programming in nonvolatile memory
Grant 11,385,810 - Lien , et al. July 12, 2
2022-07-12
Memory apparatus and method of operation using plane dependent ramp rate and timing control for program operation
Grant 11,386,968 - Lien , et al. July 12, 2
2022-07-12
Time division peak power management for non-volatile storage
Grant 11,373,710 - Hsu , et al. June 28, 2
2022-06-28
Countermeasure for reducing peak current during programming by optimizing timing of latch scan operations
Grant 11,361,835 - Lien , et al. June 14, 2
2022-06-14
Triggering next state verify in progam loop for nonvolatile memory
Grant 11,355,208 - Lien , et al. June 7, 2
2022-06-07
Ramp rate control for peak and average current reduction of open blocks
Grant 11,335,413 - Lien , et al. May 17, 2
2022-05-17
Erase operation for memory device with staircase word line voltage during erase pulse
Grant 11,335,411 - Lien , et al. May 17, 2
2022-05-17
Pre-charge timing control for peak current based on data latch count
Grant 11,328,754 - Lien , et al. May 10, 2
2022-05-10
Dynamic tier selection for program verify in nonvolatile memory
Grant 11,315,648 - Lien , et al. April 26, 2
2022-04-26
Countermeasure for reducing peak current during program operation under first read condition
Grant 11,270,776 - Lien , et al. March 8, 2
2022-03-08
Pre-charge ramp rate control for peak current based on data latch count
Grant 11,250,892 - Lien , et al. February 15, 2
2022-02-15
Peak power reduction management in non-volatile storage by delaying start times operations
Grant 11,226,772 - Lien , et al. January 18, 2
2022-01-18
Peak Power Reduction Management In Non-volatile Storage By Delaying Start Times Operations
App 20210405920 - Lien; Yu-Chung ;   et al.
2021-12-30
Loop Dependent Plane Skew Methodology For Program Operation
App 20210407596 - Lien; Yu-Chung ;   et al.
2021-12-30
Dynamic Tier Selection For Program Verify In Nonvolatile Memory
App 20210407603 - Lien; Yu-Chung ;   et al.
2021-12-30
Dynamic Staggering For Programming In Nonvolatile Memory
App 20210405891 - Lien; Yu-Chung ;   et al.
2021-12-30
Triggering Next State Verify In Progam Loop For Nonvolatile Memory
App 20210407605 - Lien; Yu-Chung ;   et al.
2021-12-30
Loop dependent plane skew methodology for program operation
Grant 11,211,127 - Lien , et al. December 28, 2
2021-12-28
Pre-Charge Ramp Rate Control For Peak Current Based On Data Latch Count
App 20210375338 - Lien; Yu-Chung ;   et al.
2021-12-02
Multi-stage Voltage Control For Peak And Average Current Reduction Of Open Blocks
App 20210375349 - Lien; Yu-Chung ;   et al.
2021-12-02
Ramp Rate Control For Peak and Average Current Reduction of Open Blocks
App 20210375371 - Lien; Yu-Chung ;   et al.
2021-12-02
Pre-charge Timing Control For Peak Current Based On Data Latch Count
App 20210375339 - Lien; Yu-Chung ;   et al.
2021-12-02
Peak and average current reduction for sub block memory operation
Grant 11,189,351 - Lien , et al. November 30, 2
2021-11-30
Multi-stage voltage control for peak and average current reduction of open blocks
Grant 11,189,337 - Lien , et al. November 30, 2
2021-11-30
Peak And Average Current Reduction For Sub Block Memory Operation
App 20210304822 - Lien; Yu-Chung ;   et al.
2021-09-30
Physical defect detection in an integrated memory assembly
Grant 11,114,178 - Eliash , et al. September 7, 2
2021-09-07
Charge storage memory device including ferroelectric layer between control gate electrode layers and methods of making the same
Grant 11,107,901 - Lien , et al. August 31, 2
2021-08-31
Source Side Precharge And Boosting Improvement For Reverse Order Program
App 20210264964 - Puthenthermadam; Sarath ;   et al.
2021-08-26
Controlling Timing And Ramp Rate Of Program-inhibit Voltage Signal During Programming To Optimize Peak Current
App 20210241836 - Lien; Yu-Chung ;   et al.
2021-08-05
Source side precharge and boosting improvement for reverse order program
Grant 11,081,162 - Puthenthermadam , et al. August 3, 2
2021-08-03
Wordline voltage overdrive methods and systems
Grant 11,081,197 - Yang , et al. August 3, 2
2021-08-03
Power management for multi-plane read operations
Grant 11,037,635 - Lien , et al. June 15, 2
2021-06-15
Wordline Voltage Overdrive Methods And Systems
App 20210027850 - Yang; Xiang ;   et al.
2021-01-28
Peak and average current reduction for open block condition
Grant 10,902,925 - Lien , et al. January 26, 2
2021-01-26
Partial Page Sensing Mode, Method, And Apparatus For 3d Nand
App 20200411109 - Yang; Xiang ;   et al.
2020-12-31
Partial page sensing mode, method, and apparatus for 3D NAND
Grant 10,878,923 - Yang , et al. December 29, 2
2020-12-29
Wordline Voltage Overdrive Methods And Systems
App 20200388342 - Yang; Xiang ;   et al.
2020-12-10
Wordline voltage overdrive methods and systems
Grant 10,861,571 - Yang , et al. December 8, 2
2020-12-08
Countermeasures for first read issue
Grant 10,861,537 - Lien , et al. December 8, 2
2020-12-08
Three-dimensional Nand Memory Device Containing Two Terminal Selector And Methods Of Using And Making Thereof
App 20200373355 - Lien; Yu-Chung ;   et al.
2020-11-26
Charge Storage Memory Device Including Ferroelectric Layer Between Control Gate Electrode Layers And Methods Of Making The Same
App 20200321444 - LIEN; Yu-Chung ;   et al.
2020-10-08
Three-dimensional NAND memory device containing two terminal selector and methods of using and making thereof
Grant 10,727,276 - Lien , et al.
2020-07-28
Managing bit-line settling time in non-volatile memory
Grant 10,636,498 - Lien , et al.
2020-04-28
Subgroup selection for verification
Grant 10,541,038 - Lien , et al. Ja
2020-01-21
Subgroup Selection For Verification
App 20190378583 - Lien; Yu-Chung ;   et al.
2019-12-12
Ferroelectric Memory Device
App 20140264271 - Shieh; Jia-Min ;   et al.
2014-09-18
Memory Device And Method For Fabricating The Same
App 20140131716 - Shieh; Jia-Min ;   et al.
2014-05-15

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