| Patent | Date |
|---|
Integrated circuit with multiple gallium nitride transistor sets
Grant 11,050,339 - Reusch , et al. June 29, 2 | 2021-06-29 |
Integrated Circuit With Multiple Gallium Nitride Transistor Sets
App 20200195122 - Reusch; David C. ; et al. | 2020-06-18 |
Integrated gallium nitride based DC-DC converter
Grant 10,601,300 - Reusch , et al. | 2020-03-24 |
Semiconductor devices with back surface isolation
Grant 10,600,674 - Lidow , et al. | 2020-03-24 |
Semiconductor Devices With Back Surface Isolation
App 20190252238 - Lidow; Alexander ; et al. | 2019-08-15 |
Gate with self-aligned ledge for enhancement mode GaN transistors
Grant 10,312,335 - Cao , et al. | 2019-06-04 |
Semiconductor devices with back surface isolation
Grant 10,312,131 - Lidow , et al. | 2019-06-04 |
GaN transistors with polysilicon layers used for creating additional components
Grant 10,312,260 - Cao , et al. | 2019-06-04 |
Integrated Gallium Nitride Based Dc-dc Converter
App 20180337588 - Reusch; David C. ; et al. | 2018-11-22 |
GaN transistors with polysilicon layers used for creating additional components
Grant 9,837,438 - Cao , et al. December 5, 2 | 2017-12-05 |
GaN TRANSISTORS WITH POLYSILICON LAYERS USED FOR CREATING ADDITIONAL COMPONENTS
App 20170330898 - Cao; Jianjun ; et al. | 2017-11-16 |
GATE WITH SELF-ALIGNED LEDGE FOR ENHANCEMENT MODE GaN TRANSISTORS
App 20170317179 - Cao; Jianjun ; et al. | 2017-11-02 |
Gate with self-aligned ledged for enhancement mode GaN transistors
Grant 9,748,347 - Cao , et al. August 29, 2 | 2017-08-29 |
Semiconductor Devices With Back Surface Isolation
App 20170162429 - Lidow; Alexander ; et al. | 2017-06-08 |
Semiconductor devices with back surface isolation
Grant 9,607,876 - Lidow , et al. March 28, 2 | 2017-03-28 |
Integrated circuit with matching threshold voltages and method for making same
Grant 9,583,480 - Cao , et al. February 28, 2 | 2017-02-28 |
GATE WITH SELF-ALIGNED LEDGED FOR ENHANCEMENT MODE GaN TRANSISTORS
App 20170047414 - Cao; Jianjun ; et al. | 2017-02-16 |
GaN device with reduced output capacitance and process for making same
Grant 9,331,191 - Colino , et al. May 3, 2 | 2016-05-03 |
Integrated Circuit With Matching Threshold Voltages And Method For Making Same
App 20160111416 - Cao; Jianjun ; et al. | 2016-04-21 |
Gan Transistors With Polysilicon Layers Used For Creating Additional Components
App 20160086980 - Cao; Jianjun ; et al. | 2016-03-24 |
GATE WITH SELF-ALIGNED LEDGED FOR ENHANCEMENT MODE GaN TRANSISTORS
App 20160035847 - Cao; Jianjun ; et al. | 2016-02-04 |
Integrated circuit with matching threshold voltages and method for making same
Grant 9,214,399 - Cao , et al. December 15, 2 | 2015-12-15 |
Method to fabricate self-aligned isolation in gallium nitride devices and integrated circuits
Grant 9,214,528 - Zhou , et al. December 15, 2 | 2015-12-15 |
GaN transistors with polysilicon layers for creating additional components
Grant 9,214,461 - Cao , et al. December 15, 2 | 2015-12-15 |
Isolation structure in gallium nitride devices and integrated circuits
Grant 9,171,911 - Zhou , et al. October 27, 2 | 2015-10-27 |
Enhancement mode gallium nitride transistor with improved gate characteristics
Grant 8,969,918 - Lidow , et al. March 3, 2 | 2015-03-03 |
Integrated Circuit With Matching Threshold Voltages And Method For Making Same
App 20150034962 - Cao; Jianjun ; et al. | 2015-02-05 |
GaN TRANSISTORS WITH POLYSILICON LAYERS FOR CREATING ADDITIONAL COMPONENTS
App 20150028384 - Cao; Jianjun ; et al. | 2015-01-29 |
Isolation Structure In Gallium Nitride Devices And Integrated Circuits
App 20150008442 - Zhou; Chunhua ; et al. | 2015-01-08 |
Method To Fabricate Self-aligned Isolation In Gallium Nitride Devices And Integrated Circuits
App 20150011057 - Zhou; Chunhua ; et al. | 2015-01-08 |
Enhancement mode GaN HEMT device
Grant 8,890,168 - Lidow , et al. November 18, 2 | 2014-11-18 |
Ion implanted and self aligned gate structure for GaN transistors
Grant 8,853,749 - Lidow , et al. October 7, 2 | 2014-10-07 |
Enhancement mode GaN HEMT device with gate spacer and method for fabricating the same
Grant 8,823,012 - Lidow , et al. September 2, 2 | 2014-09-02 |
Bumped, self-isolated GaN transistor chip with electrically isolated back surface
Grant 8,785,974 - Lidow , et al. July 22, 2 | 2014-07-22 |
ENHANCEMENT MODE GaN HEMT DEVICE
App 20130234153 - Lidow; Alexander ; et al. | 2013-09-12 |
Back diffusion suppression structures
Grant 8,436,398 - Lidow , et al. May 7, 2 | 2013-05-07 |
Enhancement mode GaN HEMT device and method for fabricating the same
Grant 8,404,508 - Lidow , et al. March 26, 2 | 2013-03-26 |
Hybrid semiconductor device having a GaN transistor and a silicon MOSFET
Grant 8,368,120 - Lidow , et al. February 5, 2 | 2013-02-05 |
Compensated gate MISFET and method for fabricating the same
Grant 8,350,294 - Lidow , et al. January 8, 2 | 2013-01-08 |
ION IMPLANTED AND SELF ALIGNED GATE STRUCTURE FOR GaN TRANSISTORS
App 20120193688 - Lidow; Alexander ; et al. | 2012-08-02 |
ENHANCEMENT MODE GaN HEMT DEVICE WITH GATE SPACER AND METHOD FOR FABRICATING THE SAME
App 20120175631 - Lidow; Alexander ; et al. | 2012-07-12 |
Semiconductor Devices With Back Surface Isolation
App 20120153300 - Lidow; Alexander ; et al. | 2012-06-21 |
Hybrid Semiconductor Device Having a GaN Transistor and a Silicon MOSFET
App 20120043553 - Lidow; Alexander ; et al. | 2012-02-23 |
Via Structure Of A Semiconductor Device And Method For Fabricating The Same
App 20110248283 - Cao; Jianjun ; et al. | 2011-10-13 |
Hybrid semiconductor device
Grant 8,017,978 - Lidow , et al. September 13, 2 | 2011-09-13 |
Ultra thin FET
Grant 7,955,969 - Kinzer , et al. June 7, 2 | 2011-06-07 |
BUMPED, SELF-ISOLATED GaN TRANSISTOR CHIP WITH ELECTRICALLY ISOLATED BACK SURFACE
App 20100258844 - Lidow; Alexander ; et al. | 2010-10-14 |
Back Diffusion Suppression Structures
App 20100258841 - Lidow; Alexander ; et al. | 2010-10-14 |
Enhancement Mode Gallium Nitride Transistor With Improved Gate Characteristics
App 20100258842 - Lidow; Alexander ; et al. | 2010-10-14 |
Compensated Gate Misfet And Method For Fabricating The Same
App 20100258848 - Lidow; Alexander ; et al. | 2010-10-14 |
ENHANCEMENT MODE GaN HEMT DEVICE AND METHOD FOR FABRICATING THE SAME
App 20100258843 - Lidow; Alexander ; et al. | 2010-10-14 |
Hybrid semiconductor device
App 20070210333 - Lidow; Alexander ; et al. | 2007-09-13 |
Ultra Thin Fet
App 20070082480 - Kinzer; Daniel M. ; et al. | 2007-04-12 |
High power MOSFET with low on-resistance and high breakdown voltage
Grant 5,742,087 - Lidow , et al. April 21, 1 | 1998-04-21 |
High power MOSFET with low on-resistance and high breakdown voltage
Grant 5,598,018 - Lidow , et al. January 28, 1 | 1997-01-28 |
High power MOSFET with low on-resistance and high breakdown voltage
Grant 5,338,961 - Lidow , et al. * August 16, 1 | 1994-08-16 |
High power MOSFET with low on-resistance and high breakdown voltage
Grant 5,191,396 - Lidow , et al. March 2, 1 | 1993-03-02 |
Plural polygon source pattern for MOSFET
Grant 5,008,725 - Lidow , et al. April 16, 1 | 1991-04-16 |
High power MOSFET with low on-resistance and high breakdown voltage
Grant 4,959,699 - Lidow , et al. September 25, 1 | 1990-09-25 |
High power MOSFET with direct connection from connection pads to underlying silicon
Grant 4,789,882 - Lidow December 6, 1 | 1988-12-06 |
High power MOSFET with low on-resistance and high breakdown voltage
Grant 4,705,759 - Lidow , et al. November 10, 1 | 1987-11-10 |
Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide
Grant 4,680,853 - Lidow , et al. July 21, 1 | 1987-07-21 |
High power MOSFET with low on-resistance and high breakdown voltage
Grant 4,642,666 - Lidow , et al. February 10, 1 | 1987-02-10 |
Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide
Grant 4,593,302 - Lidow , et al. June 3, 1 | 1986-06-03 |
Method of manufacture of high speed, high power bipolar transistor
Grant 4,416,708 - Abdoulin , et al. November 22, 1 | 1983-11-22 |
Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions
Grant 4,412,242 - Herman , et al. October 25, 1 | 1983-10-25 |
Composite metal and polysilicon field plate structure for high voltage semiconductor devices
Grant 4,399,449 - Herman , et al. August 16, 1 | 1983-08-16 |
High power MOSFET with low on-resistance and high breakdown voltage
Grant 4,376,286 - Lidow , et al. March 8, 1 | 1983-03-08 |
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