| Patent | Date |
|---|
Power Semiconductor Device With Reduced Strain
App 20220262909 - Lichtenwalner; Daniel Jenner ; et al. | 2022-08-18 |
Finfet Power Semiconductor Devices
App 20220173227 - Islam; Naeem ; et al. | 2022-06-02 |
Power Transistor With Soft Recovery Body Diode
App 20220173238 - Han; Kijeong ; et al. | 2022-06-02 |
Power Transistor With Soft Recovery Body Diode
App 20220173237 - Han; Kijeong ; et al. | 2022-06-02 |
Interface Layer Control Methods For Semiconductor Power Devices And Semiconductor Devices Formed Thereof
App 20220157962 - Lichtenwalner; Daniel Jenner | 2022-05-19 |
Semiconductor Power Devices Having Multiple Gate Trenches And Methods Of Forming Such Devices
App 20220157959 - Kim; Woongsun ; et al. | 2022-05-19 |
Semiconductor Devices Including An Offset Metal To Polysilicon Gate Contact
App 20220149165 - Lichtenwalner; Daniel Jenner ; et al. | 2022-05-12 |
Gate Trench Power Semiconductor Devices Having Improved Deep Shield Connection Patterns
App 20220149196 - Kim; Woongsun ; et al. | 2022-05-12 |
Power Semiconductor Devices Including Angled Gate Trenches
App 20220130998 - Kim; Woongsun ; et al. | 2022-04-28 |
Interface layer control methods for semiconductor power devices and semiconductor devices formed thereof
Grant 11,276,762 - Lichtenwalner March 15, 2 | 2022-03-15 |
Transistor Semiconductor Die With Increased Active Area
App 20220037524 - Lichtenwalner; Daniel Jenner ; et al. | 2022-02-03 |
Power Semiconductor Devices Having Multilayer Gate Dielectric Layers That Include An Etch Stop/field Control Layer And Methods Of Forming Such Devices
App 20220013650 - Lichtenwalner; Daniel Jenner | 2022-01-13 |
Semiconductor power devices having gate dielectric layers with improved breakdown characteristics and methods of forming such devices
Grant 11,222,955 - Lichtenwalner , et al. January 11, 2 | 2022-01-11 |
Power Devices With A Hybrid Gate Structure
App 20210399128 - Lichtenwalner; Daniel Jenner ; et al. | 2021-12-23 |
System and process for implementing accelerated test conditions for high voltage lifetime evaluation of semiconductor power devices
Grant 11,175,333 - Lichtenwalner , et al. November 16, 2 | 2021-11-16 |
Diffusion And/or Enhancement Layers For Electrical Contact Regions
App 20210343847 - Lichtenwalner; Daniel Jenner ; et al. | 2021-11-04 |
Trenched Power Device With Segmented Trench And Shielding
App 20210343834 - Lichtenwalner; Daniel Jenner | 2021-11-04 |
Conduction Enhancement Layers For Electrical Contact Regions In Power Devices
App 20210343708 - Lichtenwalner; Daniel Jenner ; et al. | 2021-11-04 |
Transistor semiconductor die with increased active area
Grant 11,164,813 - Lichtenwalner , et al. November 2, 2 | 2021-11-02 |
Semiconductor Power Devices Having Gate Dielectric Layers With Improved Breakdown Characteristics And Methods Of Forming Such Devices
App 20210336021 - Lichtenwalner; Daniel Jenner ; et al. | 2021-10-28 |
Interface Layer Control Methods For Semiconductor Power Devices And Semiconductor Devices Formed Thereof
App 20210336022 - Lichtenwalner; Daniel Jenner | 2021-10-28 |
System and Process for Implementing Accelerated Test Conditions for High Voltage Lifetime Evaluation of Semiconductor Power Devices
App 20210270886 - Lichtenwalner; Daniel Jenner ; et al. | 2021-09-02 |
Semiconductor device with improved insulated gate
Grant 10,910,481 - Lichtenwalner , et al. February 2, 2 | 2021-02-02 |
Vertical power transistor device
Grant RE48,380 - Pala , et al. January 5, 2 | 2021-01-05 |
Vertical Semiconductor Device With Improved Ruggedness
App 20200365721 - Lichtenwalner; Daniel Jenner ; et al. | 2020-11-19 |
Transistor Semiconductor Die With Increased Active Area
App 20200328150 - Lichtenwalner; Daniel Jenner ; et al. | 2020-10-15 |
Vertical Semiconductor Device With Improved Ruggedness
App 20200194584 - Lichtenwalner; Daniel Jenner ; et al. | 2020-06-18 |
Vertical semiconductor device with improved ruggedness
Grant 10,615,274 - Lichtenwalner , et al. | 2020-04-07 |
Vertical Semiconductor Device With Improved Ruggedness
App 20190198659 - Lichtenwalner; Daniel Jenner ; et al. | 2019-06-27 |
Vertical power transistor device
Grant 9,741,842 - Pala , et al. August 22, 2 | 2017-08-22 |
Enhanced gate dielectric for a field effect device with a trenched gate
Grant 9,570,570 - Lichtenwalner , et al. February 14, 2 | 2017-02-14 |
Vertical Power Transistor Device
App 20160211360 - Pala; Vipindas ; et al. | 2016-07-21 |
Wet chemistry processes for fabricating a semiconductor device with increased channel mobility
Grant 9,396,946 - Dhar , et al. July 19, 2 | 2016-07-19 |
Semiconductor Device With Improved Insulated Gate
App 20160126333 - Lichtenwalner; Daniel Jenner ; et al. | 2016-05-05 |
Vertical power transistor device
Grant 9,331,197 - Pala , et al. May 3, 2 | 2016-05-03 |
Semiconductor devices in SiC using vias through N-type substrate for backside contact to P-type layer
Grant 9,236,433 - Pala , et al. January 12, 2 | 2016-01-12 |
Field effect device with enhanced gate dielectric structure
Grant 9,111,919 - Lichtenwalner , et al. August 18, 2 | 2015-08-18 |
Semiconductor Devices In Sic Using Vias Through N-type Substrate For Backside Contact To P-type Layer
App 20150102361 - Pala; Vipindas ; et al. | 2015-04-16 |
Field Effect Device With Enhanced Gate Dielectric Structure
App 20150097226 - Lichtenwalner; Daniel Jenner ; et al. | 2015-04-09 |
Vertical Power Transistor Device
App 20150041886 - Pala; Vipindas ; et al. | 2015-02-12 |
Enhanced Gate Dielectric For A Field Effect Device With A Trenched Gate
App 20150021623 - Lichtenwalner; Daniel Jenner ; et al. | 2015-01-22 |
Wet Chemistry Processes For Fabricating A Semiconductor Device With Increased Channel Mobility
App 20120329216 - Dhar; Sarit ; et al. | 2012-12-27 |
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