Liaw; Hang M.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Liaw; Hang M..The latest application filed is for "method for enhancing aluminum nitride".

Company Profile

0.10.0

Liaw; Hang M. - Scottsdale AZ

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for enhancing aluminum nitride Grant 5,520,785 - Evans , et al. May 28, 1	1996-05-28
Ohmic contact for III-V semiconductor materials Grant 5,430,327 - Wu , et al. July 4, 1	1995-07-04
Method of forming an ohmic contact to III-V semiconductor materials Grant 5,275,971 - Wu , et al. January 4, 1	1994-01-04
Low voltage, deep junction device and method Grant 5,141,887 - Liaw , et al. August 25, 1	1992-08-25
Selective deposition of polycrystalline silicon Grant 5,080,933 - Grupen-Shemansky , et al. January 14, 1	1992-01-14
Selective deposition of amorphous and polycrystalline silicon Grant 4,963,506 - Liaw , et al. October 16, 1	1990-10-16
Monocrystalline semiconductor buried layers for electrical contacts to semiconductor devices Grant 4,849,371 - Hansen , et al. July 18, 1	1989-07-18
Method of making a void free wafer via vacuum lamination Grant 4,818,323 - d'Aragona , et al. April 4, 1	1989-04-04
Method for improved surface planarity in selective epitaxial silicon Grant 4,786,615 - Liaw , et al. November 22, 1	1988-11-22
Method of forming transistors with poly-sidewall contacts utilizing deposition of polycrystalline and insulating layers combined with selective etching and oxidation of said layers Grant 4,663,831 - Birrittella , et al. May 12, 1	1987-05-12

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