Liao; Yu-Wen

Patent Applications and Registrations

Patent applications and USPTO patent grants for Liao; Yu-Wen.The latest application filed is for "method to form memory cells separated by a void-free dielectric structure".

Company Profile

40.84.102

Liao; Yu-Wen - New Taipei City TW
Liao; Yu-Wen - New Taipei TW
Liao; Yu-Wen - Taipei TW
Liao; Yu-Wen - Hsin-Chu TW
Liao; Yu-Wen - Kaohsiung TW
Liao; Yu-Wen - Taipei City TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method To Form Memory Cells Separated By A Void-free Dielectric Structure App 20220293681 - Chen; Hsia-Wei ; et al.	2022-09-15
Memory Device App 20220246838 - Chuang; Harry-Hak-Lay ; et al.	2022-08-04
Resistive Memory Cell Using An Interfacial Transition Metal Compound Layer And Method Of Forming The Same App 20220223788 - CHENG; Wen-Hao ; et al.	2022-07-14
Memory Device App 20220223651 - CHIU; Chieh-Fei ; et al.	2022-07-14
Logic compatible RRAM structure and process Grant 11,387,411 - Chang , et al. July 12, 2	2022-07-12
Method For Fabricating Integrated Circuit Device App 20220216106 - CHEN; Hsia-Wei ; et al.	2022-07-07
Resistive Switching Random Access Memory with Asymmetric Source and Drain App 20220157889 - Yang; Chin-Chieh ; et al.	2022-05-19
Method for forming a homogeneous bottom electrode via (BEVA) top surface for memory Grant 11,315,861 - Chen , et al. April 26, 2	2022-04-26
Memory device Grant 11,316,096 - Chuang , et al. April 26, 2	2022-04-26
Method for manufacturing memory device having spacer Grant 11,296,147 - Chiu , et al. April 5, 2	2022-04-05
Integrated Circuit And Method For Fabricating The Same App 20220102428 - CHIU; Chieh-Fei ; et al.	2022-03-31
Method For Forming A Flat Bottom Electrode Via (beva) Top Surface For Memory App 20220093849 - Chen; Hsia-Wei ; et al.	2022-03-24
Rram Memory Cell With Multiple Filaments App 20220093687 - Yang; Chin-Chieh ; et al.	2022-03-24
Method For Forming A Flat Bottom Electrode Via (beva) Top Surface For Memory App 20220085280 - Chen; Hsia-Wei ; et al.	2022-03-17
Resistive switching random access memory with asymmetric source and drain Grant 11,239,279 - Yang , et al. February 1, 2	2022-02-01
Memory Device And Method For Fabricating The Same App 20210408373 - CHEN; Hsia-Wei ; et al.	2021-12-30
RRAM memory cell with multiple filaments Grant 11,201,190 - Yang , et al. December 14, 2	2021-12-14
Method for forming a flat bottom electrode via (BEVA) top surface for memory Grant 11,201,281 - Chen , et al. December 14, 2	2021-12-14
Memory Structure App 20210384421 - Chiu; Chieh-Fei ; et al.	2021-12-09
Interconnect Landing Method For Rram Technology App 20210366988 - Chen; Hsia-Wei ; et al.	2021-11-25
Method To Form Memory Cells Separated By A Void-free Dielectric Structure App 20210296401 - Chen; Hsia-Wei ; et al.	2021-09-23
Step Height Mitigation In Resistive Random Access Memory Structures App 20210280783 - Wang; Wei-Ming ; et al.	2021-09-09
RRAM structure Grant 11,107,982 - Chiu , et al. August 31, 2	2021-08-31
Interconnect landing method for RRAM technology Grant 11,094,744 - Chen , et al. August 17, 2	2021-08-17
Method to form memory cells separated by a void-free dielectric structure Grant 11,037,990 - Chen , et al. June 15, 2	2021-06-15
Step height mitigation in resistive random access memory structures Grant 11,038,108 - Wang , et al. June 15, 2	2021-06-15
Method to form memory cells separated by a void-free dielectric structure Grant 11,037,989 - Chen , et al. June 15, 2	2021-06-15
Rram Structure App 20210111339 - Chiu; Chieh-Fei ; et al.	2021-04-15
Interconnect landing method for RRAM technology Grant 10,903,274 - Chen , et al. January 26, 2	2021-01-26
Resistance variable memory structure and method of forming the same Grant 10,868,250 - Tu , et al. December 15, 2	2020-12-15
Top electrode for device structures in interconnect Grant 10,862,029 - Chen , et al. December 8, 2	2020-12-08
Logic Compatible RRAM Structure and Process App 20200381622 - Chang; Chih-Yang ; et al.	2020-12-03
Step Height Mitigation In Resistive Random Access Memory Structures App 20200373487 - Wang; Wei-Ming ; et al.	2020-11-26
Memory Device And Method For Manufacturing The Same App 20200365655 - CHIU; Chieh-Fei ; et al.	2020-11-19
Method For Forming A Flat Bottom Electrode Via (beva) Top Surface For Memory App 20200357981 - Chen; Hsia-Wei ; et al.	2020-11-12
Rram Cell Structure With Laterally Offset Beva/teva App 20200335694 - Chang; Chih-Yang ; et al.	2020-10-22
Memory Device App 20200303629 - Chuang; Harry-Hak-Lay ; et al.	2020-09-24
Method To Form Memory Cells Separated By A Void-free Dielectric Structure App 20200295084 - Chen; Hsia-Wei ; et al.	2020-09-17
Method To Form Memory Cells Separated By A Void-free Dielectric Structure App 20200295085 - Chen; Hsia-Wei ; et al.	2020-09-17
Method for forming a flat bottom electrode via (BEVA) top surface for memory Grant 10,763,426 - Chen , et al. Sep	2020-09-01
Logic compatible RRAM structure and process Grant 10,749,108 - Chang , et al. A	2020-08-18
Method to form memory cells separated by a void-free dielectric structure Grant 10,714,536 - Chen , et al.	2020-07-14
RRAM cell structure with laterally offset BEVA/TEVA Grant 10,700,275 - Chang , et al.	2020-06-30
Memory device Grant 10,686,125 - Chuang , et al.	2020-06-16
RRAM memory cell with multiple filaments Grant 10,680,038 - Yang , et al.	2020-06-09
Method For Forming A Homogeneous Bottom Electrode Via (beva) Top Surface For Memory App 20200144172 - Chen; Hsia-Wei ; et al.	2020-05-07
Method To Form Memory Cells Separated By A Void-free Dielectric Structure App 20200127053 - Chen; Hsia-Wei ; et al.	2020-04-23
Interconnect Landing Method For Rram Technology App 20200098828 - Chen; Hsia-Wei ; et al.	2020-03-26
Top Electrode For Device Structures In Interconnect App 20200098983 - Chen; Hsia-Wei ; et al.	2020-03-26
Resistive Switching Random Access Memory with Asymmetric Source and Drain App 20200083294 - Yang; Chin-Chieh ; et al.	2020-03-12
Method for forming a flat bottom electrode via (BEVA) top surface for memory Grant 10,566,519 - Chen , et al. Feb	2020-02-18
Interconnect landing method for RRAM technology Grant 10,566,387 - Chen , et al. Feb	2020-02-18
Rram Memory Cell With Multiple Filaments App 20200027924 - Yang; Chin-Chieh ; et al.	2020-01-23
Interconnect Landing Method For Rram Technology App 20200020745 - Chen; Hsia-Wei ; et al.	2020-01-16
Method for forming a homogeneous bottom electrode via (BEVA) top surface for memory Grant 10,529,658 - Chen , et al. J	2020-01-07
Method For Forming A Flat Bottom Electrode Via (beva) Top Surface For Memory App 20190386204 - Chen; Hsia-Wei ; et al.	2019-12-19
Top electrode for device structures in interconnect Grant 10,510,953 - Chen , et al. Dec	2019-12-17
RRAM memory cell with multiple filaments Grant 10,504,963 - Yang , et al. Dec	2019-12-10
High Yield Rram Cell With Optimized Film Scheme App 20190371999 - Dang; Trinh Hai ; et al.	2019-12-05
Memory device and method for fabricating the same Grant 10,483,322 - Hsieh , et al. Nov	2019-11-19
Resistive switching random access memory with asymmetric source and drain Grant 10,475,852 - Yang , et al. Nov	2019-11-12
Resistance Variable Memory Structure and Method of Forming the Same App 20190259944 - Tu; Kuo-Chi ; et al.	2019-08-22
High yield RRAM cell with optimized film scheme Grant 10,388,865 - Dang , et al. A	2019-08-20
Resistance variable memory structure and method of forming the same Grant 10,388,868 - Tu , et al. A	2019-08-20
Top Electrode For Device Structures In Interconnect App 20190229265 - Chen; Hsia-Wei ; et al.	2019-07-25
Method for forming a homogeneous bottom electrode via (BEVA) top surface for memory Grant 10,276,485 - Chen , et al.	2019-04-30
Top electrode for device structures in interconnect Grant 10,276,790 - Chen , et al.	2019-04-30
Memory Device App 20190123264 - Chuang; Harry-Hak-Lay ; et al.	2019-04-25
Rram Cell Structure With Laterally Offset Beva/teva App 20190123271 - Chang; Chih-Yang ; et al.	2019-04-25
Logic Compatible RRAM Structure and Process App 20190123274 - Chang; Chih-Yang ; et al.	2019-04-25
Rram Memory Cell With Multiple Filaments App 20190109178 - Yang; Chin-Chieh ; et al.	2019-04-11
Method For Forming A Homogeneous Bottom Electrode Via (beva) Top Surface For Memory App 20190096795 - Chen; Hsia-Wei ; et al.	2019-03-28
Rram Memory Cell With Multiple Filaments App 20190067373 - Yang; Chin-Chieh ; et al.	2019-02-28
Method For Forming A Flat Bottom Electrode Via (beva) Top Surface For Memory App 20190058109 - Chen; Hsia-Wei ; et al.	2019-02-21
Resistive Switching Random Access Memory with Asymmetric Source and Drain App 20190051702 - Yang; Chin-Chieh ; et al.	2019-02-14
Method For Forming A Homogeneous Bottom Electrode Via (beva) Top Surface For Memory App 20190043795 - Chen; Hsia-Wei ; et al.	2019-02-07
RRAM cell structure with laterally offset BEVA/TEVA Grant 10,199,575 - Chang , et al. Fe	2019-02-05
Interconnect Landing Method For Rram Technology App 20180374901 - Chen; Hsia-Wei ; et al.	2018-12-27
Metal landing method for RRAM technology Grant 10,163,981 - Chen , et al. Dec	2018-12-25
Memory device having a single bottom electrode layer Grant 10,164,169 - Chuang , et al. Dec	2018-12-25
RRAM cell with PMOS access transistor Grant 10,164,185 - Shih , et al. Dec	2018-12-25
Step height reduction of memory element Grant 10,158,072 - Yang , et al. Dec	2018-12-18
Logic compatible RRAM structure and process Grant 10,158,070 - Chang , et al. Dec	2018-12-18
Memory Device And Method For Fabricating The Same App 20180358409 - HSIEH; Ching-Pei ; et al.	2018-12-13
Step Height Reduction Of Memory Element App 20180351099 - YANG; Jen-Sheng ; et al.	2018-12-06
Bottom electrode for RRAM structure Grant 10,109,793 - Yang , et al. October 23, 2	2018-10-23
Resistive switching random access memory with asymmetric source and drain Grant 10,103,200 - Yang , et al. October 16, 2	2018-10-16
Resistance variable memory structure Grant 10,103,330 - Tu , et al. October 16, 2	2018-10-16
Resistance variable memory structure Grant 10,050,197 - Tu , et al. August 14, 2	2018-08-14
One transistor and one resistive random access memory (RRAM) structure with spacer Grant 10,038,139 - Chen , et al. July 31, 2	2018-07-31
Perpendicular magnetic tunneling junction (MTJ) for improved magnetoresistive random-access memory (MRAM) process Grant 10,008,662 - You , et al. June 26, 2	2018-06-26
High Yield Rram Cell With Optimized Film Scheme App 20180138402 - Dang; Trinh Hai ; et al.	2018-05-17
Logic Compatible RRAM Structure and Process App 20180138403 - Chang; Chih-Yang ; et al.	2018-05-17
RRAM device with data storage layer having increased height Grant 9,941,470 - Yang , et al. April 10, 2	2018-04-10
Memory Device Having A Single Bottom Electrode Layer App 20180097173 - Chuang; Harry-Hak-Lay ; et al.	2018-04-05
Resistance Variable Memory Structure App 20180083188 - TU; Kuo-Chu ; et al.	2018-03-22
High yield RRAM cell with optimized film scheme Grant 9,876,167 - Dang , et al. January 23, 2	2018-01-23
Top Electrode For Device Structures In Interconnect App 20180019390 - Chen; Hsia-Wei ; et al.	2018-01-18
Rram Cell With Pmos Access Transistor App 20180012657 - Shih; Sheng-Hung ; et al.	2018-01-11
Logic compatible RRAM structure and process Grant 9,853,213 - Chang , et al. December 26, 2	2017-12-26
Method of forming a semiconductor structure Grant 9,818,938 - Tu , et al. November 14, 2	2017-11-14
Metal Landing Method For Rram Technology App 20170317143 - Chen; Hsia-Wei ; et al.	2017-11-02
Resistive random access memory (RRAM) structure Grant 9,780,145 - Chang , et al. October 3, 2	2017-10-03
Top electrode for device structures in interconnect Grant 9,780,302 - Chen , et al. October 3, 2	2017-10-03
RRAM cell with PMOS access transistor Grant 9,773,552 - Shih , et al. September 26, 2	2017-09-26
Resistance Variable Memory Structure App 20170271590 - Tu; Kuo-Chi ; et al.	2017-09-21
Rram Device With Data Storage Layer Having Increased Height App 20170207387 - Yang; Jen-Sheng ; et al.	2017-07-20
Resistance variable memory structure and method of forming the same Grant 9,673,391 - Tu , et al. June 6, 2	2017-06-06
Bottom Electrode For Rram Structure App 20170141305 - Yang; Jen-Sheng ; et al.	2017-05-18
Rram Cell With Pmos Access Transistor App 20170140820 - Shih; Sheng-Hung ; et al.	2017-05-18
Rram Cell Structure With Laterally Offset Beva/teva App 20170141301 - Chang; Chih-Yang ; et al.	2017-05-18
Logic Compatible RRAM Structure and Process App 20170098764 - Chang; Chih-Yang ; et al.	2017-04-06
RRAM cell with PMOS access transistor Grant 9,577,009 - Shih , et al. February 21, 2	2017-02-21
Resistive Switching Random Access Memory with Asymmetric Source and Drain App 20170033159 - Yang; Chin-Chieh ; et al.	2017-02-02
RRAM device with data storage layer having increased height Grant 9,553,265 - Yang , et al. January 24, 2	2017-01-24
RRAM device Grant 9,543,511 - Sung , et al. January 10, 2	2017-01-10
Logic compatible RRAM structure and process Grant 9,537,094 - Chang , et al. January 3, 2	2017-01-03
Top Electrode For Device Structures In Interconnect App 20160380193 - Chen; Hsia-Wei ; et al.	2016-12-29
Resistive switching random access memory with asymmetric source and drain Grant 9,478,638 - Yang , et al. October 25, 2	2016-10-25
Low form voltage resistive random access memory (RRAM) Grant 9,466,794 - Yang , et al. October 11, 2	2016-10-11
Bottom electrode for RRAM structure Grant 9,461,245 - Yang , et al. October 4, 2	2016-10-04
Resistive Random Access Memory (rram) Structure App 20160276408 - CHANG; Chih-Yang ; et al.	2016-09-22
Resistance Variable Memory Structure and Method of Forming the Same App 20160268507 - Tu; Kuo-Chi ; et al.	2016-09-15
Rram Device App 20160268505 - Sung; Fu-Ting ; et al.	2016-09-15
Perpendicular Magnetic Tunneling Junction (mtj) For Improved Magnetoresistive Random-access Memory (mram) Process App 20160268499 - You; Wen-Chun ; et al.	2016-09-15
Top electrode for device structures in interconnect Grant 9,444,045 - Chen , et al. September 13, 2	2016-09-13
Resistive random access memory (RRAM) and method of making Grant 9,431,604 - Liao , et al. August 30, 2	2016-08-30
One Transistor and One Resistive Random Access Memory (RRAM) Structure with Spacer App 20160248008 - Chen; Hsia-Wei ; et al.	2016-08-25
RRAM cell structure with laterally offset BEVA/TEVA Grant 9,425,392 - Chang , et al. August 23, 2	2016-08-23
Resistance Variable Memory Structure And Method Of Forming The Same App 20160225988 - Tu; Kuo-Chi ; et al.	2016-08-04
RRAM retention by depositing Ti capping layer before HK HfO Grant 9,385,316 - Liao , et al. July 5, 2	2016-07-05
Resistive random access memory (RRAM) structure Grant 9,356,072 - Chang , et al. May 31, 2	2016-05-31
Resistance variable memory structure and method of forming the same Grant 9,349,953 - Tu , et al. May 24, 2	2016-05-24
One transistor and one resistive random access memory (RRAM) structure with spacer Grant 9,331,277 - Chen , et al. May 3, 2	2016-05-03
Low Form Voltage Resistive Random Access Memory (RRAM) App 20160118584 - Yang; Chin-Chieh ; et al.	2016-04-28
Logic Compatible RRAM Structure and Process App 20160118583 - Chang; Chih-Yang ; et al.	2016-04-28
Resistance variable memory structure and method of forming the same Grant 9,312,482 - Tu , et al. April 12, 2	2016-04-12
Top Electrode For Device Structures In Interconnect App 20160035975 - Chen; Hsia-Wei ; et al.	2016-02-04
Resistive memory cell array with top electrode bit line Grant 9,236,570 - Chang , et al. January 12, 2	2016-01-12
Logic compatible RRAM structure and process Grant 9,231,197 - Tu , et al. January 5, 2	2016-01-05
Low form voltage resistive random access memory (RRAM) Grant 9,231,205 - Yang , et al. January 5, 2	2016-01-05
Method Of Forming A Semiconductor Structure App 20150380644 - TU; Kuo-Chi ; et al.	2015-12-31
Rram Cell Structure With Laterally Offset Beva/teva App 20150325786 - Chang; Chih-Yang ; et al.	2015-11-12
RRAM cell with bottom electrode Grant 9,178,144 - Sung , et al. November 3, 2	2015-11-03
Top electrode blocking layer for RRAM device Grant 9,172,036 - Chen , et al. October 27, 2	2015-10-27
RRAM Cell with Bottom Electrode App 20150295172 - Sung; Fu-Ting ; et al.	2015-10-15
High Yield Rram Cell With Optimized Film Scheme App 20150287917 - Dang; Trinh Hai ; et al.	2015-10-08
Resistance variable memory structure and method of forming the same Grant 9,130,162 - Tu , et al. September 8, 2	2015-09-08
RRAM cell structure with laterally offset BEVA/TEVA Grant 9,112,148 - Chang , et al. August 18, 2	2015-08-18
One transistor and one resistive (1T1R) random access memory (RAM) structure with dual spacers Grant 9,099,647 - Liao , et al. August 4, 2	2015-08-04
Resistive Random Access Memory (rram) Structure App 20150214276 - CHANG; Chih-Yang ; et al.	2015-07-30
Easily taken and carried holder for boots Grant 9,078,510 - Liao July 14, 2	2015-07-14
RRAM RETENTION BY DEPOSITING Ti CAPPING LAYER BEFORE HK HfO App 20150194602 - Liao; Yu-Wen ; et al.	2015-07-09
Memory cells breakdown protection Grant 9,076,522 - You , et al. July 7, 2	2015-07-07
Resistive Memory Cell Array With Top Electrode Bit Line App 20150155488 - Chang; Chih-Yang ; et al.	2015-06-04
One Transistor And One Resistive (1t1r) Random Access Memory (ram) Structure With Dual Spacers App 20150147864 - Liao; Yu-Wen ; et al.	2015-05-28
Top Electrode Blocking Layer for RRAM Device App 20150144859 - Chen; Hsia-Wei ; et al.	2015-05-28
Resistive random access memory (RRAM) structure and method of making the RRAM structure Grant 9,023,699 - Chang , et al. May 5, 2	2015-05-05
Rram Cell Structure With Laterally Offset Beva/teva App 20150090949 - Chang; Chih-Yang ; et al.	2015-04-02
Memory Cells Breakdown Protection App 20150092471 - YOU; Wen-Chun ; et al.	2015-04-02
Resistive Random Access Memory And Manufacturing Method Thereof App 20150069315 - SHIH; SHENG-HUNG ; et al.	2015-03-12
One transistor and one resistive (1T1R) random access memory (RRAM) structure with dual spacers Grant 8,963,114 - Liao , et al. February 24, 2	2015-02-24
Resistive memory cell array with top electrode bit line Grant 8,952,347 - Chang , et al. February 10, 2	2015-02-10
Resistance variable memory structure Grant 8,921,818 - Tu , et al. December 30, 2	2014-12-30
Easily taken and carried holder for boots App 20140367986 - Liao; Yu-Wen	2014-12-18
Applicator App 20140369734 - Liao; Yu-Wen	2014-12-18
Resistive memory reset Grant 8,908,415 - Yang , et al. December 9, 2	2014-12-09
Low Form Voltage Resistive Random Access Memory (rram) App 20140264229 - Yang; Chin-Chieh ; et al.	2014-09-18
Resistance Variable Memory Structure And Method Of Forming The Same App 20140264233 - TU; Kuo-Chi ; et al.	2014-09-18
Resistive Switching Random Access Memory with Asymmetric Source and Drain App 20140264222 - Yang; Chin-Chieh ; et al.	2014-09-18
Resistance Variable Memory Structure And Method Of Forming The Same App 20140264234 - TU; Kuo-Chi ; et al.	2014-09-18
Resistive Memory Cell Array with Top Electrode Bit Line App 20140252297 - Chang; Chih-Yang ; et al.	2014-09-11
One Transistor And One Resistive (1t1r) Random Access Memory (rram) Structure With Dual Spacers App 20140252295 - Liao; Yu-Wen ; et al.	2014-09-11
Resistive Memory Reset App 20140247644 - Yang; Chin-Chieh ; et al.	2014-09-04
One Transistor And One Resistive Random Access Memory (rram) Structure With Spacer App 20140203236 - Chen; Hsia-Wei ; et al.	2014-07-24
Resistive Random Access Memory (rram) Structure And Method Of Making The Rram Structure App 20140175365 - CHANG; Chih-Yang ; et al.	2014-06-26
Resistance Variable Memory Structure And Method Of Forming The Same App 20140175366 - TU; Kuo-Chi ; et al.	2014-06-26
Resistive Random Access Memory (rram) And Method Of Making App 20140166961 - LIAO; Yu-Wen ; et al.	2014-06-19
Logic compatible RRAM structure and process Grant 8,742,390 - Tu , et al. June 3, 2	2014-06-03
Logic Compatible Rram Structure And Process App 20140131651 - Tu; Kuo-Chi ; et al.	2014-05-15
Resistance Variable Memory Structure App 20140131650 - TU; Kuo-Chi ; et al.	2014-05-15
Logic Compatible Rram Structure And Process App 20140131654 - Tu; Kuo-Chi ; et al.	2014-05-15
Resistance Variable Memory Structure And Method Of Forming The Same App 20140091272 - LIAO; Yu-Wen ; et al.	2014-04-03