Patent | Date |
---|
Fabricating method for a metal oxide semiconductor transistor Grant 7,595,234 - Tsao , et al. September 29, 2 | 2009-09-29 |
Method of fabricating semiconductor devices and method of adjusting lattice distance in device channel Grant 7,462,542 - Liu , et al. December 9, 2 | 2008-12-09 |
Method Of Fabricating Semiconductor Devices And Method Of Adjusting Lattice Distance In Device Channel App 20080057655 - Liu; Alex ;   et al. | 2008-03-06 |
Method of manufacturing semiconductor MOS transistor device Grant 7,326,622 - Liu , et al. February 5, 2 | 2008-02-05 |
Fin field effect transistor and method for manufacturing fin field effect transistor Grant 7,319,063 - Liao , et al. January 15, 2 | 2008-01-15 |
Fin Field Effect Transistor And Method For Manufacturing Fin Field Effect Transistor App 20070126032 - LIAO; WEN-SHIANG ;   et al. | 2007-06-07 |
Method of cleaning wafer and method of manufacturing gate structure Grant 7,220,647 - Wu , et al. May 22, 2 | 2007-05-22 |
Metal oxide semiconductor transistor Grant 7,214,988 - Tsao , et al. May 8, 2 | 2007-05-08 |
Method of removing spacers and fabricating MOS transistor Grant 7,196,019 - Wu , et al. March 27, 2 | 2007-03-27 |
Fabricating Method For A Metal Oxide Semiconductor Transistor App 20070066041 - Tsao; Po-Chao ;   et al. | 2007-03-22 |
Metal Oxide Semiconductor Transistor App 20070063290 - Tsao; Po-Chao ;   et al. | 2007-03-22 |
Method of manufacturing MOS transistors Grant 7,135,365 - Liu , et al. November 14, 2 | 2006-11-14 |
Method Of Manufacturing Mos Transistors App 20060228847 - Liu; Yi-Cheng ;   et al. | 2006-10-12 |
Method Of Fabricating Semiconductor Devices And Method Of Adjusting Lattice Distance In Device Channel App 20060228843 - Liu; Alex ;   et al. | 2006-10-12 |
Fin field effect transistor and method for manufacturing fin field effect transistor App 20060172476 - Liao; Wen-Shiang ;   et al. | 2006-08-03 |
Method of cleaning wafer and method of manufacturing gate structure App 20060172548 - Wu; Chih-Ning ;   et al. | 2006-08-03 |
Method Of Removing Spacers And Fabricating Mos Transistor App 20060134899 - Wu; Chih-Ning ;   et al. | 2006-06-22 |
Etching process compatible with DUV lithography App 20060110688 - Lee; Chung-Ju ;   et al. | 2006-05-25 |
Method Of Manufacturing Semiconductor Mos Transistor Device App 20060099763 - Liu; Yi-Cheng ;   et al. | 2006-05-11 |
Method Of Manufacturing Semiconductor Mos Transistor Device App 20060094195 - Liu; Yi-Cheng ;   et al. | 2006-05-04 |
Method of fabricating an opening with deep ultra-violet photoresist Grant 6,294,314 - Liao September 25, 2 | 2001-09-25 |
Method Of Fabricating An Opening With Deep Ultra-violet Photoresist App 20010001702 - LIAO, KUAN-YANG | 2001-05-24 |
Method for manufacturing a MOS device with multiple threshold voltages Grant 6,235,596 - Liao May 22, 2 | 2001-05-22 |
Method to form crown capacitor for high density dram App 20010000244 - Liao, Kuan-Yang | 2001-04-12 |
Method of fabricating field effect transistor with silicide sidewall spacers Grant 6,180,477 - Liao January 30, 2 | 2001-01-30 |
Method of fabricating sub-quarter-micron salicide polysilicon Grant 6,100,142 - Liao August 8, 2 | 2000-08-08 |
Method of manufacturing embedded DRAM Grant 6,069,037 - Liao May 30, 2 | 2000-05-30 |
Structure of a memory cell Grant 6,020,606 - Liao February 1, 2 | 2000-02-01 |
Fabricating method of a metal gate Grant 6,001,716 - Liao December 14, 1 | 1999-12-14 |
Method for manufacturing dynamic random access memory capable of increasing the storage capacity of the capacitor Grant 5,994,197 - Liao November 30, 1 | 1999-11-30 |
Self-aligned ion implanted transition metal contact diffusion barrier apparatus Grant 5,491,365 - Chin , et al. February 13, 1 | 1996-02-13 |
CBiCMOS fabrication method using sacrificial gate poly Grant 5,407,841 - Liao , et al. April 18, 1 | 1995-04-18 |
Self-aligned contact diffusion barrier method Grant 5,389,575 - Chin , et al. February 14, 1 | 1995-02-14 |
Plasma-nitridated self-aligned tungsten system for VLSI interconnections Grant 4,847,111 - Chow , et al. July 11, 1 | 1989-07-11 |