Liao; Jeng-Hwa

Patent Applications and Registrations

Patent applications and USPTO patent grants for Liao; Jeng-Hwa.The latest application filed is for "semiconductor memory device and method of manufacturing the same".

Company Profile

2.6.14

Liao; Jeng-Hwa - Hsinchu TW
Liao; Jeng-Hwa - Hsinchu City TW
Liao; Jeng-Hwa - Hsin chu N/A TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor memory device and method of manufacturing the same Grant 10,354,924 - Liao , et al. July 16, 2	2019-07-16
Semiconductor Memory Device And Method Of Manufacturing The Same App 20190067119 - Liao; Jeng-Hwa ; et al.	2019-02-28
Memory Device And Method For Fabricating The Same App 20170069762 - Liao; Jeng-Hwa ; et al.	2017-03-09
Methods for fabricating semiconductor device Grant 9,236,497 - Liao , et al. January 12, 2	2016-01-12
Method For Reducing Defects In Polysilicon Layers App 20150340236 - Liao; Jeng Hwa ; et al.	2015-11-26
Methods For Fabricating Semiconductor Device App 20150171223 - Liao; Jeng-Hwa ; et al.	2015-06-18
Semiconductor device and methods of manufacturing Grant 8,969,946 - Jhang , et al. March 3, 2	2015-03-03
Semiconductor Device And Methods Of Manufacturing App 20140264544 - Jhang; Pei-Ci ; et al.	2014-09-18
Method for reducing wordline bridge rate Grant 8,791,022 - Liao , et al. July 29, 2	2014-07-29
Semiconductor Structure For Improved Oxide Fill In App 20140117356 - Liao; Jeng Hwa ; et al.	2014-05-01
Gate Structure And Method Of Manufacturing Thereof App 20140048866 - Liao; Jeng Hwa ; et al.	2014-02-20
Method For Fabricating A Semiconductor Device With Increased Reliability App 20130168754 - Liao; Jeng Hwa ; et al.	2013-07-04
Method For Reducing Wordline Bridge Rate App 20120129350 - Liao; Jeng-Hwa ; et al.	2012-05-24
Charge trapping memory cell having bandgap engineered tunneling structure with oxynitride isolation layer Grant 8,169,835 - Liao , et al. May 1, 2	2012-05-01
Charge Trapping Memory Cell Having Bandgap Engineered Tunneling Structure With Oxynitride Isolation Layer App 20110075486 - Liao; Jeng-Hwa ; et al.	2011-03-31
Method For Fabricating Non-volatile Memory App 20100210085 - Liao; Jeng-Hwa ; et al.	2010-08-19
Methods For Fabricating Dielectric Layer And Non-volatile Memory App 20100178758 - Liao; Jeng-Hwa ; et al.	2010-07-15

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