Liao; Duanquan
Patent Applications and Registrations
Patent applications and USPTO patent grants for Liao; Duanquan.The latest application filed is for "method for improving size of contact holes of fdsoi device".
- Liao; Duanquan - Shanghai CN
| Patent | Date |
|---|---|
| Method for improving size of contact holes of FDSOI device Grant 11,271,012 - Wang , et al. March 8, 2 | 2022-03-08 |
| Method For Improving Size Of Contact Holes Of Fdsoi Device App 20220068971 - WANG; Tonghui ; et al. | 2022-03-03 |
| Semiconductor Structure And Manufacturing Method For Same App 20190378910 - SONG; Yang ; et al. | 2019-12-12 |
| Silicon-on-insulator structure having bipolar stress, and manufacturing method therefor Grant 10,497,718 - Ma , et al. De | 2019-12-03 |
| Silicon-on-insulator Structure Having Bipolar Stress, And Manufacturing Method Therefor App 20190304998 - MA; Yanfei ; et al. | 2019-10-03 |
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