Liang; Pin-Ju

Patent Applications and Registrations

Patent applications and USPTO patent grants for Liang; Pin-Ju.The latest application filed is for "semiconductor device with corner isolation protection and methods of forming the same".

Company Profile

9.8.10

Liang; Pin-Ju - Changhua County TW
Liang; Pin-Ju - Hsinchu TW
- Changhua County TW
Liang; Pin-Ju - Changhua TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor Device with Corner Isolation Protection and Methods of Forming the Same App 20220310783 - Chen; Bwo-Ning ; et al.	2022-09-29
Method of Gap Filling Using Conformal Deposition-Annealing-Etching Cycle for Reducing Seam Void and Bending App 20220172958 - Yu; De-Wei ; et al.	2022-06-02
Method of gap filling using conformal deposition-annealing-etching cycle for reducing seam void and bending Grant 11,289,343 - Yu , et al. March 29, 2	2022-03-29
Wavy profile mitigation Grant 11,232,988 - Shen , et al. January 25, 2	2022-01-25
Wavy Profile Mitigation App 20210375688 - Shen; Shu-Wen ; et al.	2021-12-02
Semiconductor Device and Method App 20210366715 - Ma; Ta-Chun ; et al.	2021-11-25
Method Of Manufacturing A Semiconductor Device And A Semiconductor Device App 20210359111 - CHIU; Ya-Wen ; et al.	2021-11-18
Selective silicon growth for gapfill improvement Grant 11,107,903 - Yu , et al. August 31, 2	2021-08-31
Semiconductor device and method Grant 11,087,987 - Ma , et al. August 10, 2	2021-08-10
Selective Silicon Growth for Gapfill Improvement App 20200373412 - Yu; De-Wei ; et al.	2020-11-26
Selective silicon growth for gapfill improvement Grant 10,741,674 - Yu , et al. A	2020-08-11
Selective Silicon Growth for Gapfill Improvement App 20200152771 - Yu; De-Wei ; et al.	2020-05-14
Semiconductor Device and Method App 20200135467 - Ma; Ta-Chun ; et al.	2020-04-30
Method of Gap Filling Using Conformal Deposition-Annealing-Etching Cycle for Reducing Seam Void and Bending App 20200035506A1 -	2020-01-30
Selective silicon growth for gapfill improvement Grant 10,535,751 - Yu , et al. Ja	2020-01-14
Method of gap filling using conformal deposition-annealing-etching cycle for reducing seam void and bending Grant 10,504,747 - Yu , et al. Dec	2019-12-10
Selective Silicon Growth for Gapfill Improvement App 20190371914 - Yu; De-Wei ; et al.	2019-12-05
Gapfill improvement Grant 10,347,741 - Liang , et al. July 9, 2	2019-07-09
Silicon Reflow for Reducing Seam and Void and Bending During Gap Fill App 20190103284 - Yu; De-Wei ; et al.	2019-04-04

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