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Patent applications and USPTO patent grants for Liang; Hancheng.The latest application filed is for "mosfet modeling for ic design accurate for high frequencies".
Patent | Date |
---|---|
MOSFET modeling for IC design accurate for high frequencies Grant 7,735,033 - Zhang , et al. June 8, 2 | 2010-06-08 |
MOSFET Modeling for IC Design Accurate for High Frequencies App 20080109204 - Zhang; Xisheng ;   et al. | 2008-05-08 |
MOSFET modeling for IC design accurate for high frequencies Grant 7,313,770 - Zhang , et al. December 25, 2 | 2007-12-25 |
MOSFET modeling for IC design accurate for high frequencies App 20050114111 - Zhang, Xisheng ;   et al. | 2005-05-26 |
MOSFET modeling for IC design accurate for high frequencies Grant 6,851,097 - Zhang , et al. February 1, 2 | 2005-02-01 |
Apparatus and methods for measuring noise in a device Grant 6,693,439 - Liu , et al. February 17, 2 | 2004-02-17 |
MOSFET modeling for IC design accurate for high frequencies App 20040031001 - Zhang, Xisheng ;   et al. | 2004-02-12 |
MOSFET modeling for IC design accurate for high frequencies Grant 6,618,837 - Zhang , et al. September 9, 2 | 2003-09-09 |
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