loadpatents
name:-0.030714988708496
name:-0.023144006729126
name:-0.0019209384918213
Li; Yisuo Patent Filings

Li; Yisuo

Patent Applications and Registrations

Patent applications and USPTO patent grants for Li; Yisuo.The latest application filed is for "pillar-shaped semiconductor device and manufacturing method thereof".

Company Profile
0.24.25
  • Li; Yisuo - Singapore SG
  • LI; Yisuo - Tokyo JP
  • Li; Yisuo - Glattbrugg CH
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Pillar-shaped Semiconductor Device And Manufacturing Method Thereof
App 20220028869 - MASUOKA; Fujio ;   et al.
2022-01-27
Method For Manufacturing Three-Dimensional Semiconductor Device
App 20210358754 - MASUOKA; Fujio ;   et al.
2021-11-18
Semiconductor device production method and semiconductor device
Grant 9,666,688 - Masuoka , et al. May 30, 2
2017-05-30
Semiconductor Device Production Method And Semiconductor Device
App 20160380080 - MASUOKA; Fujio ;   et al.
2016-12-29
Semiconductor device production method and semiconductor device
Grant 9,490,362 - Masuoka , et al. November 8, 2
2016-11-08
Semiconductor Device And Production Method
App 20160308013 - MASUOKA; Fujio ;   et al.
2016-10-20
Integrated circuit system with double doped drain transistor
Grant 9,269,770 - Li , et al. February 23, 2
2016-02-23
Surrounding Gate Transistor (sgt) Structure
App 20150357428 - MASUOKA; Fujio ;   et al.
2015-12-10
Semiconductor Device Production Method And Semiconductor Device
App 20150287822 - MASUOKA; Fujio ;   et al.
2015-10-08
Surrounding gate transistor (SGT) structure
Grant 9,153,697 - Masuoka , et al. October 6, 2
2015-10-06
Surround gate CMOS semiconductor device
Grant 8,609,494 - Masuoka , et al. December 17, 2
2013-12-17
Surround Gate Cmos Semiconductor Device
App 20130252413 - MASUOKA; Fujio ;   et al.
2013-09-26
Surround gate CMOS semiconductor device
Grant 8,486,785 - Masuoka , et al. July 16, 2
2013-07-16
Semiconductor structure including high voltage device
Grant 8,410,553 - Koo , et al. April 2, 2
2013-04-02
LDMOS using a combination of enhanced dielectric stress layer and dummy gates
Grant 8,334,567 - Chu , et al. December 18, 2
2012-12-18
High performance LDMOS device having enhanced dielectric strain layer
Grant 8,293,614 - Chu , et al. October 23, 2
2012-10-23
High Performance Ldmos Device Having Enhanced Dielectric Strain Layer
App 20120119293 - Chu; Sanford ;   et al.
2012-05-17
High performance LDMOS device having enhanced dielectric strain layer
Grant 8,163,621 - Chu , et al. April 24, 2
2012-04-24
Semiconductor Device And Production Method
App 20110303973 - Masuoka; Fujio ;   et al.
2011-12-15
Semiconductor Device And Fabrication Method Therefor
App 20110303985 - Masuoka; Fujio ;   et al.
2011-12-15
Integrated circuit system employing an elevated drain
Grant 7,951,680 - Zhang , et al. May 31, 2
2011-05-31
Semiconductor Structure Including High Voltage Device
App 20110079850 - KOO; Jeoung Mo ;   et al.
2011-04-07
LDMOS Using A Combination of Enhanced Dielectric Stress Layer and Dummy Gates
App 20110042743 - CHU; Sanford ;   et al.
2011-02-24
Structure and method to form source and drain regions over doped depletion regions
Grant 7,888,752 - Chui , et al. February 15, 2
2011-02-15
Semiconductor structure including high voltage device
Grant 7,867,862 - Koo , et al. January 11, 2
2011-01-11
LDMOS using a combination of enhanced dielectric stress layer and dummy gates
Grant 7,824,968 - Chu , et al. November 2, 2
2010-11-02
Integrated Circuit System Employing An Elevated Drain
App 20100109097 - Zhang; Guowei ;   et al.
2010-05-06
Integrated Circuit System Employing Stress-engineered Layers
App 20100109045 - Liu; Jin Ping ;   et al.
2010-05-06
High Performance Ldmos Device Having Enhanced Dielectric Strain Layer
App 20090302385 - Chu; Sanford ;   et al.
2009-12-10
Semiconductor device layout and channeling implant process
Grant 7,573,099 - Li , et al. August 11, 2
2009-08-11
Semiconductor Structure Including High Voltage Device
App 20090072310 - KOO; Jeoung Mo ;   et al.
2009-03-19
LDMOS using a combination of enhanced dielectric stress layer and dummy gates
App 20080014690 - Chu; Sanford ;   et al.
2008-01-17
Integrated Circuit System With Double Doped Drain Transistor
App 20070210376 - Li; Yisuo ;   et al.
2007-09-13
Shallow low energy ion implantation into pad oxide for improving threshold voltage stability
Grant 7,259,072 - Li , et al. August 21, 2
2007-08-21
Semiconductor device layout and channeling implant process
Grant 7,253,483 - Li , et al. August 7, 2
2007-08-07
Structure and method to form source and drain regions over doped depletion regions
App 20070178652 - Chui; King Jien ;   et al.
2007-08-02
Structure and method to form source and drain regions over doped depletion regions
Grant 7,202,133 - Chui , et al. April 10, 2
2007-04-10
Low cost source drain elevation through poly amorphizing implant technology
Grant 7,101,743 - Li , et al. September 5, 2
2006-09-05
Semiconductor device layout and channeling implant process
App 20050280082 - Li, Yisuo ;   et al.
2005-12-22
Semiconductor device layout and channeling implant process
Grant 6,972,236 - Li , et al. December 6, 2
2005-12-06
Semiconductor device layout and channeling implant process
App 20050236677 - Li, Yisuo ;   et al.
2005-10-27
Shallow low energy ion implantation into pad oxide for improving threshold voltage stability
App 20050239256 - Li, Yisuo ;   et al.
2005-10-27
Semiconductor Device Layout And Channeling Implant Process
App 20050170595 - Li, Yisuo ;   et al.
2005-08-04
Structure and method to form source and drain regions over doped depletion regions
App 20050156253 - Chui, King Jien ;   et al.
2005-07-21
Low Cost Source Drain Elevation Through Poly Amorphizing Implant Technology
App 20050148125 - Li, Yisuo ;   et al.
2005-07-07

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.

© 2024 USPTO.report | Privacy Policy | Resources | RSS Feed of Trademarks | Trademark Filings Twitter Feed