Li; Canhua
Patent Applications and Registrations
Patent applications and USPTO patent grants for Li; Canhua.The latest application filed is for "bipolar semiconductor device having localized enhancement regions".
- Li; Canhua - Torrance CA
- Li; Canhua - Beijing CN
- Li; Canhua - Troy NY
| Patent | Date |
|---|---|
| Isolation structure for IGBT devices having an integrated diode Grant 11,075,291 - Dainese , et al. July 27, 2 | 2021-07-27 |
| Bipolar semiconductor device with multi-trench enhancement regions Grant 10,164,078 - Udrea , et al. Dec | 2018-12-25 |
| Bipolar semiconductor device with sub-cathode enhancement regions Grant 9,871,128 - Udrea , et al. January 16, 2 | 2018-01-16 |
| Bipolar Semiconductor Device with Sub-Cathode Enhancement Regions App 20170271487 - Udrea; Florin ; et al. | 2017-09-21 |
| Bipolar Semiconductor Device Having Localized Enhancement Regions App 20170271445 - Udrea; Florin ; et al. | 2017-09-21 |
| Bipolar Semiconductor Device with Multi-Trench Enhancement Regions App 20170271488 - Udrea; Florin ; et al. | 2017-09-21 |
| Auto Complete Search Box Based On The User's Context To Reduce User's Input App 20160098416 - Li; Canhua | 2016-04-07 |
| Material for selective deposition and etching App 20060211210 - Bhat; Ishwara ; et al. | 2006-09-21 |
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