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name:-0.0084879398345947
name:-0.0058479309082031
name:-0.00051283836364746
Leys; Maarten Patent Filings

Leys; Maarten

Patent Applications and Registrations

Patent applications and USPTO patent grants for Leys; Maarten.The latest application filed is for "antiphase domain boundary-free iii-v compound semiconductor material on semiconductor substrate and method for manufacturing thereof".

Company Profile
0.6.5
  • Leys; Maarten - Eindhoven N/A NL
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Antiphase domain boundary-free III-V compound semiconductor material on semiconductor substrate and method for manufacturing thereof
Grant 9,218,964 - Wang , et al. December 22, 2
2015-12-22
Antiphase Domain Boundary-Free III-V Compound Semiconductor Material on Semiconductor Substrate and Method for Manufacturing Thereof
App 20120032234 - Wang; Gang ;   et al.
2012-02-09
Method for forming a group III nitride material on a silicon substrate
Grant 7,989,925 - Cheng , et al. August 2, 2
2011-08-02
AlGaN/GaN high electron mobility transistor devices
Grant 7,772,055 - Germain , et al. August 10, 2
2010-08-10
Method for forming a group III nitride material on a silicon substrate
Grant 7,666,765 - Cheng , et al. February 23, 2
2010-02-23
Method For Forming A Group Iii Nitride Material On A Silicon Substrate
App 20090294777 - Cheng; Kai ;   et al.
2009-12-03
AIGaN/GaN HIGH ELECTRON MOBILITY TRANSISTOR DEVICES
App 20090191674 - Germain; Marianne ;   et al.
2009-07-30
AlGaN/GaN high electron mobility transistor devices
Grant 7,547,928 - Germain , et al. June 16, 2
2009-06-16
Method For Forming A Group Iii Nitride Material On A Silicon Substrate
App 20070238315 - Cheng; Kai ;   et al.
2007-10-11
AlGaN/GaN high electron mobility transistor devices
App 20060006414 - Germain; Marianne ;   et al.
2006-01-12

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