Levy; Max Gerald
Patent Applications and Registrations
Patent applications and USPTO patent grants for Levy; Max Gerald.The latest application filed is for "trench forming method and structure".
- Levy; Max Gerald - Essex Junction VT
- Levy; Max Gerald - Wappingers Falls NY
| Patent | Date |
|---|---|
| SOI substrate contact with extended silicide area Grant 7,939,896 - Dang , et al. May 10, 2 | 2011-05-10 |
| Trench forming method and structure Grant 7,772,083 - Botula , et al. August 10, 2 | 2010-08-10 |
| Trench Forming Method And Structure App 20100164075 - Botula; Alan Bernard ; et al. | 2010-07-01 |
| Soi Substrate Contact With Extended Silicide Area App 20100084736 - Dang; Dinh ; et al. | 2010-04-08 |
| SOI substrate contact with extended silicide area Grant 7,675,121 - Dang , et al. March 9, 2 | 2010-03-09 |
| Soi Substrate Contact With Extended Silicide Area App 20090093092 - DANG; DINH ; et al. | 2009-04-09 |
| Soi Substrate Contact With Extended Silicide Area App 20090090970 - Dang; Dinh ; et al. | 2009-04-09 |
| Manufacturing self-aligned polysilicon fet devices isolated with maskless shallow trench isolation and gate conductor fill technology with active devices and dummy doped regions formed in mesas Grant 6,103,592 - Levy , et al. August 15, 2 | 2000-08-15 |
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