Leusink; Gert J.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Leusink; Gert J..The latest application filed is for "integration of ald barrier layer and cvd ru liner for void-free cu filling".

Company Profile

0.6.8

Leusink; Gert J. - Albany NY
Leusink; Gert J. - Saltpoint NY
Leusink; Gert J - Saltpoint NY

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Integration of ALD barrier layer and CVD Ru liner for void-free Cu filling Grant 9,607,888 - Yu , et al. March 28, 2	2017-03-28
INTEGRATION OF ALD BARRIER LAYER AND CVD Ru LINER FOR VOID-FREE Cu FILLING App 20150221550 - Yu; Kai-Hung ; et al.	2015-08-06
Method for forming a passivated metal layer Grant 7,189,431 - Yamasaki , et al. March 13, 2	2007-03-13
Method of depositing metal layers from metal-carbonyl precursors Grant 7,078,341 - Yamasaki , et al. July 18, 2	2006-07-18
Method of forming a tantalum-containing gate electrode structure Grant 7,067,422 - Nakamura , et al. June 27, 2	2006-06-27
Method For Forming A Passivated Metal Layer App 20060068097 - Yamasaki; Hideaki ; et al.	2006-03-30
Deposition of ruthenium metal layers in a thermal chemical vapor deposition process App 20060068098 - Yamasaki; Hideaki ; et al.	2006-03-30
Low-pressure deposition of metal layers from metal-carbonyl precursors Grant 6,989,321 - Yamasaki , et al. January 24, 2	2006-01-24
Method of forming a tantalum-containing gate electrode structure App 20050227441 - Nakamura, Kazuhito ; et al.	2005-10-13
Method of forming a metal layer using an intermittent precursor gas flow process Grant 6,924,223 - Yamasaki , et al. August 2, 2	2005-08-02
Method of depositing metal layers from metal-carbonyl precursors App 20050079708 - Yamasaki, Hideaki ; et al.	2005-04-14
Method of forming a metal layer using an intermittent precursor gas flow process App 20050069632 - Yamasaki, Hideaki ; et al.	2005-03-31
Method for depositing metal layers using sequential flow deposition App 20050069641 - Matsuda, Tsukasa ; et al.	2005-03-31
Low-pressure deposition of metal layers from metal-carbonyl precursors App 20050070100 - Yamasaki, Hideaki ; et al.	2005-03-31

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.