Letz; Tobias

Patent Applications and Registrations

Patent applications and USPTO patent grants for Letz; Tobias.The latest application filed is for "enhanced electromigration performance of copper lines in metallization systems of semiconductor devices by surface alloying".

Company Profile

0.14.14

Letz; Tobias - Dresden N/A DE

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Enhancing adhesion of interlayer dielectric materials of semiconductor devices by suppressing silicide formation at the substrate edge Grant 8,859,398 - Letz , et al. October 14, 2	2014-10-14
Technique for forming a passivation layer without a terminal metal Grant 8,841,140 - Letz , et al. September 23, 2	2014-09-23
Reducing copper defects during a wet chemical cleaning of exposed copper surfaces in a metallization layer of a semiconductor device Grant 8,673,087 - Feustel , et al. March 18, 2	2014-03-18
Method of reducing contamination by providing an etch stop layer at the substrate edge Grant 8,426,312 - Richter , et al. April 23, 2	2013-04-23
Test system and method of reducing damage in seed layers in metallization systems of semiconductor devices Grant 8,323,989 - Feustel , et al. December 4, 2	2012-12-04
Local silicidation of via bottoms in metallization systems of semiconductor devices Grant 8,193,086 - Letz , et al. June 5, 2	2012-06-05
Semiconductor device comprising an in-chip active heat transfer system Grant 7,924,569 - Letz April 12, 2	2011-04-12
Semiconductor structure comprising an electrically conductive feature and method of forming a semiconductor structure Grant 7,879,709 - Feustel , et al. February 1, 2	2011-02-01
Enhanced Electromigration Performance Of Copper Lines In Metallization Systems Of Semiconductor Devices By Surface Alloying App 20100289125 - Feustel; Frank ; et al.	2010-11-18
Method for removing a passivation layer prior to depositing a barrier layer in a copper metallization layer Grant 7,820,536 - Schuehrer , et al. October 26, 2	2010-10-26
Test System And Method Of Reducing Damage In Seed Layers In Metallization Systems Of Semiconductor Devices App 20100244028 - Feustel; Frank ; et al.	2010-09-30
Enhancing Adhesion Of Interlayer Dielectric Materials Of Semiconductor Devices By Suppressing Silicide Formation At The Substrate Edge App 20100248463 - Letz; Tobias ; et al.	2010-09-30
Semiconductor substrate having a protection layer at the substrate back side Grant 7,781,343 - Letz , et al. August 24, 2	2010-08-24
Local Silicidation Of Via Bottoms In Metallization Systems Of Semiconductor Devices App 20100164123 - Letz; Tobias ; et al.	2010-07-01
Semiconductor Device Comprising An In-chip Active Heat Transfer System App 20100079959 - Letz; Tobias	2010-04-01
Reducing Copper Defects During A Wet Chemical Cleaning Of Exposed Copper Surfaces In A Metallization Layer Of A Semiconductor Device App 20090139543 - Feustel; Frank ; et al.	2009-06-04
Semiconductor Structure Comprising An Electrically Conductive Feature And Method Of Forming A Semiconductor Structure App 20090085145 - Feustel; Frank ; et al.	2009-04-02
Semiconductor Device Having A Locally Enhanced Electromigration Resistance In An Interconnect Structure App 20090032961 - Feustel; Frank ; et al.	2009-02-05
Semiconductor Substrate Having A Protection Layer At The Substrate Back Side App 20080132072 - Letz; Tobias ; et al.	2008-06-05
Technique For Forming A Passivation Layer Without A Terminal Metal App 20080102540 - Letz; Tobias ; et al.	2008-05-01
Method And Test Structure For Estimating Electromigration Effects Caused By Porous Barrier Materials App 20070278484 - Feustel; Frank ; et al.	2007-12-06
Method Of Reducing Contamination By Providing An Etch Stop Layer At The Substrate Edge App 20070155133 - Richter; Ralf ; et al.	2007-07-05
A Semiconductor Having A Copper-based Metallization Stack With A Last Aluminum Metal Line Layer App 20070120264 - Lehr; Matthias ; et al.	2007-05-31
Method For Removing A Passivation Layer Prior To Depositing A Barrier Layer In A Copper Metallization Layer App 20070123034 - Schuehrer; Holger ; et al.	2007-05-31

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