| Patent | Date |
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Semiconductor detectors integrated with Bragg reflectors
Grant 10,818,807 - Jacob , et al. October 27, 2 | 2020-10-27 |
Semiconductor Detectors Integrated With Bragg Reflectors And Methods Of Forming Same
App 20200235252 - JACOB; AJEY POOVANNUMMOOTTIL ; et al. | 2020-07-23 |
Semiconductor structure with a dopant implant region having a linearly graded conductivity level and method of forming the structure
Grant 9,799,652 - Feilchenfeld , et al. October 24, 2 | 2017-10-24 |
Semiconductor structure with a dopant implant region having a linearly graded conductivity level and method of forming the structure
Grant 9,768,028 - Feilchenfeld , et al. September 19, 2 | 2017-09-19 |
Low leakage, high frequency devices
Grant 9,337,310 - Letavic , et al. May 10, 2 | 2016-05-10 |
Integrated circuit with trimming
Grant 9,331,086 - Van Noort , et al. May 3, 2 | 2016-05-03 |
Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered airgap field plates
Grant 9,245,960 - Abou-Khalil , et al. January 26, 2 | 2016-01-26 |
High voltage laterally diffused metal oxide semiconductor
Grant 9,240,463 - Ellis-Monaghan , et al. January 19, 2 | 2016-01-19 |
High voltage laterally diffused metal oxide semiconductor
Grant 9,236,449 - Ellis-Monaghan , et al. January 12, 2 | 2016-01-12 |
Low Leakage, High Frequency Devices
App 20150318378 - LETAVIC; Theodore J. ; et al. | 2015-11-05 |
High voltage laterally diffused metal oxide semiconductor
Grant 9,059,276 - Feilchenfeld , et al. June 16, 2 | 2015-06-16 |
High Voltage Laterally Diffused Metal Oxide Semiconductor
App 20150014769 - ELLIS-MONAGHAN; John J. ; et al. | 2015-01-15 |
Interdigitated capacitors with a zero quadratic voltage coefficient of capacitance or zero linear temperature coefficient of capacitance
Grant 8,901,710 - Anderson , et al. December 2, 2 | 2014-12-02 |
Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) having a high drain-to-body breakdown voltage (Vb), a method of forming an LEDMOSFET, and a silicon-controlled rectifier (SCR) incorporating a complementary pair of LEDMOSFETs
Grant 8,901,676 - Abou-Khalil , et al. December 2, 2 | 2014-12-02 |
High Voltage Laterally Diffused Metal Oxide Semiconductor
App 20140346597 - Feilchenfeld; Natalie B. ; et al. | 2014-11-27 |
High Voltage Laterally Diffused Metal Oxide Semiconductor
App 20140346596 - Ellis-Monaghan; John J. ; et al. | 2014-11-27 |
Interdigitated Capacitors With A Zero Quadratic Voltage Coefficient Of Capacitance Or Zero Linear Temperature Coefficient Of Capacitance
App 20140239448 - Anderson; Frederick G. ; et al. | 2014-08-28 |
Lateral Extended Drain Metal Oxide Semiconductor Field Effect Transistor (ledmosfet) With Tapered Airgap Field Plates
App 20140225186 - Abou-Khalil; Michel J. ; et al. | 2014-08-14 |
Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered dielectric plates to achieve a high drain-to-body breakdown voltage, a method of forming the transistor and a program storage device for designing the transistor
Grant 8,482,067 - Abou-Khalil , et al. July 9, 2 | 2013-07-09 |
Lateral Extended Drain Metal Oxide Semiconductor Field Effect Transistor (ledmosfet) With Tapered Dielectric Plates To Achieve A High Drain-to-body Breakdown Voltage, A Method Of Forming The Transistor And A Program Storage Device For Designing The Transistor
App 20130001589 - Abou-Khalil; Michel J. ; et al. | 2013-01-03 |
Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered dielectric plates
Grant 8,299,547 - Abou-Khalil , et al. October 30, 2 | 2012-10-30 |
Lateral Extended Drain Metal Oxide Semiconductor Field Effect Transistor (ledmosfet) With Tapered Dielectric Plates To Achieve A High Drain-to-body Breakdown Voltage, A Method Of Forming The Transistor And A Program Storage Device For Designing The Transistor
App 20120168766 - Abou-Khalil; Michel J. ; et al. | 2012-07-05 |
LATERAL EXTENDED DRAIN METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (LEDMOSFET) HAVING A HIGH DRAIN-TO-BODY BREAKDOWN VOLTAGE (Vb), A METHOD OF FORMING AN LEDMOSFET, AND A SILICON-CONTROLLED RECTIFIER (SCR) INCORPORATING A COMPLEMENTARY PAIR OF LEDMOSFETS
App 20120168817 - Abou-Khalil; Michel J. ; et al. | 2012-07-05 |
Integrated Circuit
App 20110186919 - Van Noort; Wibo D. ; et al. | 2011-08-04 |
Dual gate oxide high-voltage semiconductor device and method for forming the same
Grant 7,268,046 - Letavic , et al. September 11, 2 | 2007-09-11 |
Lateral thin-film soi device having a field plate with isolated metallic regions
App 20070114608 - Letavic; Theodore J. | 2007-05-24 |
A hybrid bypolar-mos trench gate semiconductor device
App 20060278893 - Letavic; Theodore J. | 2006-12-14 |
Dual gate oxide high-voltage semiconductor device and method for forming the same
App 20050085023 - Letavic, Theodore J. ; et al. | 2005-04-21 |
Dual gate oxide high-voltage semiconductor device
Grant 6,847,081 - Letavic , et al. January 25, 2 | 2005-01-25 |
Lateral high voltage semiconductor device having a sense terminal and method for sensing a drain voltage of the same
Grant 6,627,958 - Letavic , et al. September 30, 2 | 2003-09-30 |
Lateral high voltage semiconductor device having a sense terminal and method for sensing a drain voltage of the same
App 20030107086 - Letavic, Theodore J. ; et al. | 2003-06-12 |
Dual Gate Oxide High-voltage Semiconductor Device
App 20030107087 - Letavic, Theodore J. ; et al. | 2003-06-12 |
High frequency high voltage silicon-on-insulator device with mask variable inversion channel and method for forming the same
App 20030107050 - Letavic, Theodore J. ; et al. | 2003-06-12 |
Method of providing a gettering scheme in the manufacture of silicon-on-insulator (SOI) integrated circuits
Grant 6,093,624 - Letavic , et al. July 25, 2 | 2000-07-25 |
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