loadpatents
name:-0.013204097747803
name:-0.010743141174316
name:-0.0018570423126221
LEIBIGER; Gunnar Patent Filings

LEIBIGER; Gunnar

Patent Applications and Registrations

Patent applications and USPTO patent grants for LEIBIGER; Gunnar.The latest application filed is for "growth of a-b crystals without crystal lattice curvature".

Company Profile
1.12.12
  • LEIBIGER; Gunnar - Freiberg DE
  • Leibiger; Gunnar - Freibierg DE
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Growth Of A-b Crystals Without Crystal Lattice Curvature
App 20200232117 - WEINERT; Berndt ;   et al.
2020-07-23
Growth of A-B crystals without crystal lattice curvature
Grant 10,662,549 - Weinert , et al.
2020-05-26
Growth Of A-b Crystals Without Crystal Lattice Curvature
App 20180080143 - WEINERT; Berndt ;   et al.
2018-03-22
Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy
Grant 9,856,579 - Leibiger , et al. January 2, 2
2018-01-02
Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as such
Grant 9,461,121 - Scholz , et al. October 4, 2
2016-10-04
Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy
Grant 9,074,297 - Leibiger , et al. July 7, 2
2015-07-07
Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as such
Grant 8,778,078 - Scholz , et al. July 15, 2
2014-07-15
Process For The Manufacture Of A Doped Iii-n Bulk Crystal And A Free-standing Iii-n Substrate, And Doped Iii-n Bulk Crystal And Free-standing Iii-n Substrate As Such
App 20140151716 - SCHOLZ; Ferdinand ;   et al.
2014-06-05
Process for smoothening III-N substrates
Grant 8,415,766 - Holzig , et al. April 9, 2
2013-04-09
Method And Device For Manufacturing Semiconductor Compound Materials By Means Of Vapour Phase Epitaxy
App 20120021163 - LEIBIGER; Gunnar ;   et al.
2012-01-26
Process for producing a III-N bulk crystal and a free-standing III-N substrate, and III-N bulk crystal and free-standing III-N substrate
Grant 8,048,224 - Leibiger , et al. November 1, 2
2011-11-01
Process For Smoothening Iii-n Substrates
App 20100019352 - Holzig; Stefan ;   et al.
2010-01-28
Process for smoothening III-N substrates
Grant 7,585,772 - Holzig , et al. September 8, 2
2009-09-08
Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy
App 20080213543 - Leibiger; Gunnar ;   et al.
2008-09-04
PROCESS FOR PRODUCING (Al, Ga)N CRYSTALS
App 20080203409 - Leibiger; Gunnar ;   et al.
2008-08-28
PROCESS FOR PRODUCING (Al, Ga)lnN CRYSTALS
App 20080203408 - Leibiger; Gunnar ;   et al.
2008-08-28
Process For The Manufacture Of A Doped Iii-n Bulk Crystal And A Free-standing Iii-n Substrate, And Doped Iii-n Bulk Crystal And Free-standing Iii-n Substrate As Such
App 20080083910 - Scholz; Ferdinand ;   et al.
2008-04-10
Process for smoothening III-N substrates
App 20080023800 - Holzig; Stefan ;   et al.
2008-01-31
Process For Producing A Iii-n Bulk Crystal And A Free-standing Iii-n Substrate, And Iii-n Bulk Crystal And Free-standing Iii-n Substrate
App 20070257334 - Leibiger; Gunnar ;   et al.
2007-11-08
Process For Producing A Free-standing Iii-n Layer, And Free-standing Iii-n Substrate
App 20070141814 - Leibiger; Gunnar ;   et al.
2007-06-21

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