loadpatents
Patent applications and USPTO patent grants for Leebrick; David H..The latest application filed is for "fill and etchback process using dual photoresist sacrificial layer and two-step etching process for planarizing oxide-filled shallow trench structure".
Patent | Date |
---|---|
Fill and etchback process using dual photoresist sacrificial layer and two-step etching process for planarizing oxide-filled shallow trench structure Grant 5,516,625 - McNamara , et al. May 14, 1 | 1996-05-14 |
Method of determining position on a wafer Grant 4,566,796 - Leebrick January 28, 1 | 1986-01-28 |
uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.
While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.
All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.