loadpatents
name:-0.04090404510498
name:-0.016958951950073
name:-0.0012600421905518
Lee; Yong Meng Patent Filings

Lee; Yong Meng

Patent Applications and Registrations

Patent applications and USPTO patent grants for Lee; Yong Meng.The latest application filed is for "structure and method for testing of pic with an upturned mirror".

Company Profile
0.35.40
  • Lee; Yong Meng - San Jose CA
  • Lee; Yong Meng - Mechanicville NY
  • Lee; Yong Meng - Singapore N/A SG
  • Lee; Yong-Meng - Hopewell Junction NY US
  • Lee; Yong Meng - Woodlands SG
  • Lee; Yong Meng - US
  • Lee; Yong Meng - Beacon NY
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Structure And Method For Testing Of Pic With An Upturned Mirror
App 20210356518 - Soldano; Lucas ;   et al.
2021-11-18
Structure And Method For Testing Of Pic With An Upturned Mirror
App 20210356519 - Soldano; Lucas ;   et al.
2021-11-18
Forming self-aligned NiSi placement with improved performance and yield
Grant 9,607,989 - Wu , et al. March 28, 2
2017-03-28
Method for creating self-aligned SDB for minimum gate-junction pitch and epitaxy formation in a fin-type IC device
Grant 9,524,911 - Tsai , et al. December 20, 2
2016-12-20
FORMING SELF-ALIGNED NiSi PLACEMENT WITH IMPROVED PERFORMANCE AND YIELD
App 20160163702 - WU; Xusheng ;   et al.
2016-06-09
Semiconductor Gate With Wide Top Or Bottom
App 20160049488 - SHEN; Yan Ping ;   et al.
2016-02-18
Depositing an etch stop layer before a dummy cap layer to improve gate performance
Grant 9,209,258 - Zhou , et al. December 8, 2
2015-12-08
Forming a gate by depositing a thin barrier layer on a titanium nitride cap
Grant 9,202,697 - Luo , et al. December 1, 2
2015-12-01
Using sacrificial oxide layer for gate length tuning and resulting device
Grant 9,147,572 - Jha , et al. September 29, 2
2015-09-29
Depositing An Etch Stop Layer Before A Dummy Cap Layer To Improve Gate Performance
App 20150249136 - ZHOU; Feng ;   et al.
2015-09-03
Integrated circuits and methods of forming integrated circuits with interlayer dielectric protection
Grant 9,123,783 - Wang , et al. September 1, 2
2015-09-01
Systems And Methods For Fabricating Gate Structures For Semiconductor Devices
App 20150024585 - LUO; Tien-Ying ;   et al.
2015-01-22
Using Sacrificial Oxide Layer For Gate Length Tuning And Resulting Device
App 20140339612 - JHA; Ashish Kumar ;   et al.
2014-11-20
Spacer Divot Sealing Method And Semiconductor Device Incorporating Same
App 20140175562 - Wang; Haiting ;   et al.
2014-06-26
Doped Flowable Pre-metal Dielectric
App 20140151760 - WANG; Haiting ;   et al.
2014-06-05
Integrated Circuits And Methods Of Forming Integrated Circuits With Interlayer Dielectric Protection
App 20140131881 - Wang; Xin ;   et al.
2014-05-15
Capacitor top plate over source/drain to form a 1T memory device
Grant 8,716,081 - Teo , et al. May 6, 2
2014-05-06
Spacer protection and electrical connection for array device
Grant 8,623,714 - Park , et al. January 7, 2
2014-01-07
Spacer-less low-K dielectric processes
Grant 8,624,329 - Lee , et al. January 7, 2
2014-01-07
High-k Seal for Protection of Replacement Gates
App 20140004677 - Li; Ying ;   et al.
2014-01-02
Hybrid orientation substrate with stress layer
Grant 8,274,115 - Teo , et al. September 25, 2
2012-09-25
Balancing NFET and PFET performance using straining layers
Grant 8,106,462 - Chen , et al. January 31, 2
2012-01-31
Method of manufacture of an integrated circuit system with self-aligned isolation structures
Grant 8,053,327 - Mishra , et al. November 8, 2
2011-11-08
Spacer Protection And Electrical Connection For Array Device
App 20110227136 - Park; Jae-Eun ;   et al.
2011-09-22
Method to remove spacer after salicidation to enhance contact etch stop liner stress on MOS
Grant 7,999,325 - Teh , et al. August 16, 2
2011-08-16
Balancing Nfet And Pfet Performance Using Straining Layers
App 20110169096 - Chen; Xiangdong ;   et al.
2011-07-14
Method and apparatus for post silicide spacer removal
Grant 7,977,185 - Greene , et al. July 12, 2
2011-07-12
Integrated circuit having a plurality of MOSFET devices
Grant 7,932,178 - Teo , et al. April 26, 2
2011-04-26
Threshold voltage improvement employing fluorine implantation and adjustment oxide layer
Grant 7,893,502 - Li , et al. February 22, 2
2011-02-22
Threshold Voltage Improvement Employing Fluorine Implantation And Adjustment Oxide Layer
App 20100289088 - Li; Weipeng ;   et al.
2010-11-18
Method of implanting a non-dopant atom into a semiconductor device
Grant 7,737,009 - Lindsay , et al. June 15, 2
2010-06-15
Spacer-less Low-K Dielectric Processes
App 20100059831 - Lee; Yong Meng ;   et al.
2010-03-11
Method to enhance device performance with selective stress relief
Grant 7,659,174 - Lee , et al. February 9, 2
2010-02-09
Integrated Circuit System Employing Single Mask Layer Technique For Well Formation
App 20100009527 - Lee; Yong Meng ;   et al.
2010-01-14
Spacer-less low-k dielectric processes
Grant 7,615,427 - Lee , et al. November 10, 2
2009-11-10
Silicided polysilicon spacer for enhanced contact area
Grant 7,598,572 - Dyer , et al. October 6, 2
2009-10-06
Hybrid Orientation Substrate With Stress Layer
App 20090236663 - Teo; Lee Wee ;   et al.
2009-09-24
Structure and Method of Producing Isolation with Non-Dopant Implantation
App 20090042359 - Lindsay; Richard ;   et al.
2009-02-12
Method To Remove Spacer After Salicidation To Enhance Contact Etch Stop Liner Stress On Mos
App 20090026549 - TEH; Young Way ;   et al.
2009-01-29
Semiconductor System Having Complementary Strained Channels
App 20080315317 - Lai; Chung Woh ;   et al.
2008-12-25
Method to remove spacer after salicidation to enhance contact etch stop liner stress on MOS
Grant 7,445,978 - Teh , et al. November 4, 2
2008-11-04
Capacitor Top Plate Over Source/drain To Form A 1t Memory Device
App 20080224228 - Teo; Lee Wee ;   et al.
2008-09-18
Integrated Circuit Having A Plurality Of Mosfet Devices
App 20080157223 - Teo; Lee Wee ;   et al.
2008-07-03
Post-silicide spacer removal
Grant 7,393,746 - Dyer , et al. July 1, 2
2008-07-01
Integrated Circuit System With Isolation
App 20080150074 - Mishra; Shailendra ;   et al.
2008-06-26
Hot Carrier Degradation Reduction Using Ion Implantation Of Silicon Nitride Layer
App 20080128834 - Yang; Haining ;   et al.
2008-06-05
Silicided Polysilicon Spacer For Enhanced Contact Area
App 20080102612 - Dyer; Thomas W. ;   et al.
2008-05-01
Post-silicide spacer removal
App 20080090370 - Dyer; Thomas W. ;   et al.
2008-04-17
Method Of Fabricating Structure For Integrated Circuit Incorporating Hybrid Orientation Technology And Trench Isolation Regions
App 20080048269 - Chen; Xiangdong ;   et al.
2008-02-28
Method To Enhance Device Performance With Selective Stress Relief
App 20080050868 - Lee; Yong Meng ;   et al.
2008-02-28
Structure and method to implement dual stressor layers with improved silicide control
App 20080026523 - Lee; Yong Meng ;   et al.
2008-01-31
Method to enhance device performance with selective stress relief
Grant 7,309,637 - Lee , et al. December 18, 2
2007-12-18
Spacer-less low-k dielectric processes
App 20070281410 - Lee; Yong Meng ;   et al.
2007-12-06
Composite stress spacer
Grant 7,256,084 - Lim , et al. August 14, 2
2007-08-14
Method And Apparatus For Post Silicide Spacer Removal
App 20070161244 - Greene; Brian J. ;   et al.
2007-07-12
Method to enhance device performance with selective stress relief
App 20070134870 - Lee; Yong Meng ;   et al.
2007-06-14
Integrated Circuits Having Strained Channel Field Effect Transistors And Methods Of Making
App 20070099360 - Lee; Yong Meng ;   et al.
2007-05-03
Double-gated silicon-on-insulator (SOI) transistors with corner rounding
Grant 7,141,854 - Lee , et al. November 28, 2
2006-11-28
Composite stress spacer
App 20060252194 - Lim; Khee Yong ;   et al.
2006-11-09
Method to remove spacer after salicidation to enhance contact etch stop liner stress on MOS
App 20060249794 - Teh; Young Way ;   et al.
2006-11-09
Hot Carrier Degradation Reduction Using Ion Implantation Of Silicon Nitride Layer
App 20060151843 - Yang; Haining ;   et al.
2006-07-13
Method of forming double-gated silicon-on-insulator (SOI) transistors with corner rounding
Grant 6,927,104 - Lee , et al. August 9, 2
2005-08-09
Method of forming double-gated silicon-on-insulator (SOI) transistors with corner rounding
App 20050059194 - Lee, Yong Meng ;   et al.
2005-03-17
Method of forming double-gate semiconductor-on-insulator (SOI) transistors
Grant 6,835,609 - Lee , et al. December 28, 2
2004-12-28
Method of forming double-gated silicon-on-insulator (SOI) transistors with reduced gate to source-drain overlap capacitance
Grant 6,787,404 - Lee , et al. September 7, 2
2004-09-07
Method for forming damascene dual gate for improved oxide uniformity and control
Grant 6,583,011 - Xia , et al. June 24, 2
2003-06-24
Selective Salicide Process By Reformation Of Silicon Nitride Sidewall Spacers
App 20020123192 - Lee, Yong Meng
2002-09-05
Selective formation of hydrogen rich PECVD silicon nitride for improved NMOS transistor performance
Grant 6,372,569 - Lee , et al. April 16, 2
2002-04-16
Selective salicide process by reformation of silicon nitride sidewall spacers
Grant 6,258,648 - Lee July 10, 2
2001-07-10
Silicon nitride--TEOS oxide, salicide blocking layer for deep sub-micron devices
Grant 6,025,267 - Pey , et al. February 15, 2
2000-02-15

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