Lee; Jhang W.
Patent Applications and Registrations
Patent applications and USPTO patent grants for Lee; Jhang W..The latest application filed is for "heteroepitaxy by growth of thermally strained homojunction superlattice buffer layers".
- Lee; Jhang W. - Richardson TX
- Lee; Jhang W. - Mansfield MA
| Patent | Date |
|---|---|
| Heteroepitaxy by growth of thermally strained homojunction superlattice buffer layers Grant 5,183,776 - Lee February 2, 1 | 1993-02-02 |
| III-V Semiconductor growth initiation on silicon using TMG and TEG Grant 4,910,167 - Lee , et al. March 20, 1 | 1990-03-20 |
| III-V on Si heterostructure using a thermal strain layer Grant 4,900,372 - Lee , et al. February 13, 1 | 1990-02-13 |
| Ion implantation and annealing of compound semiconductor layers Grant 4,863,877 - Fan , et al. September 5, 1 | 1989-09-05 |
| Annealing method for III-V deposition Grant 4,835,116 - Lee , et al. May 30, 1 | 1989-05-30 |
| Selective OMCVD growth of compound semiconductor materials on silicon substrates Grant 4,826,784 - Salerno , et al. May 2, 1 | 1989-05-02 |
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