LEE; Ho Nyung

Patent Applications and Registrations

Patent applications and USPTO patent grants for LEE; Ho Nyung.The latest application filed is for "strain enhancement of functional oxygen defects in electrochemical metal oxides".

Company Profile

0.6.8

LEE; Ho Nyung - Oak Ridge TN
Lee; Ho Nyung - Halle DE

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Strain Enhancement Of Functional Oxygen Defects In Electrochemical Metal Oxides App 20170077522 - ERES; Gyula ; et al.	2017-03-16
Strontium cobaltite oxygen sponge catalyst and methods of use Grant 9,550,166 - Lee , et al. January 24, 2	2017-01-24
Strontium Cobaltite Oxygen Sponge Catalyst And Methods Of Use App 20150148218 - Lee; Ho Nyung ; et al.	2015-05-28
Band gap tuning in transition metal oxides by site-specific substitution Grant 8,613,798 - Lee , et al. December 24, 2	2013-12-24
Band Gap Tuning in Transition Metal Oxides by Site-Specific Substitution App 20130213263 - Lee; Ho Nyung ; et al.	2013-08-22
Ferroelectric tunneling element and memory applications which utilize the tunneling element Grant 7,759,713 - Kalinin , et al. July 20, 2	2010-07-20
Ultrahigh Density Ferroelectric Storage And Lithography By High Order Ferroic Switching App 20070274668 - Kalinin; Sergei V. ; et al.	2007-11-29
Ultrahigh density ferroelectric storage and lithography by high order ferroic switching Grant 7,292,768 - Kalinin , et al. November 6, 2	2007-11-06
Ferroelectric tunneling element and memory applications which utilize the tunneling element App 20070205448 - Kalinin; Sergei V. ; et al.	2007-09-06
Non c-axis oriented bismuth-layered perovskite ferroelectric structure epitaxially grown on buffered silicon Grant 6,663,989 - Lee , et al. December 16, 2	2003-12-16
Non-c-axis oriented bismuth-layered perovskite ferroelectric structure epitaxially grown on buffered silicon App 20030008179 - Lee, Ho Nyung ; et al.	2003-01-09
Non-c-axis oriented bismuth-layered perovskite ferroelectric structure epitaxially grown on buffered silicon App 20020197489 - Lee, Ho Nyung ; et al.	2002-12-26

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