| Patent | Date |
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Silicon carbide power device, driving circuit and control method
Grant 11,184,003 - Hsu , et al. November 23, 2 | 2021-11-23 |
Silicon Carbide Power Device, Driving Circuit And Control Method
App 20210273636 - HSU; Fu-Jen ; et al. | 2021-09-02 |
Silicon Carbride Power Device, Driving Circuit And Control Method
App 20210273637 - HSU; Fu-Jen ; et al. | 2021-09-02 |
Silicon carbide power device, driving circuit and control method
Grant 11,108,388 - Hsu , et al. August 31, 2 | 2021-08-31 |
Semiconductor power device
Grant 10,497,777 - Yen , et al. De | 2019-12-03 |
Silicon carbide semiconductor device
Grant 10,483,389 - Yen , et al. Nov | 2019-11-19 |
Silicon carbide semiconductor device
Grant 10,418,476 - Yen , et al. Sept | 2019-09-17 |
Intelligent power module operable to be driven by negative gate voltage
Grant 10,396,774 - Hung , et al. A | 2019-08-27 |
Intelligent Power Module Operable To Be Driven By Negative Gate Voltage
App 20190181849 - Hung; Chien-Chung ; et al. | 2019-06-13 |
Semiconductor Power Device
App 20190081136 - Yen; Cheng-Tyng ; et al. | 2019-03-14 |
Silicon carbide semiconductor element and manufacturing method thereof
Grant 10,020,368 - Yen , et al. July 10, 2 | 2018-07-10 |
Wide bandgap semiconductor device with adjustable voltage level
Grant 9,761,703 - Hsu , et al. September 12, 2 | 2017-09-12 |
Silicon Carbide Semiconductor Device
App 20170250275 - Yen; Cheng-Tyng ; et al. | 2017-08-31 |
Silicon Carbide Semiconductor Element And Manufacturing Method Thereof
App 20170207305 - Yen; Cheng-Tyng ; et al. | 2017-07-20 |
Silicon carbide field effect transistor
Grant 9,685,552 - Hung , et al. June 20, 2 | 2017-06-20 |
Silicon carbide semiconductor device and method of manufacture thereof
Grant 9,373,713 - Yen , et al. June 21, 2 | 2016-06-21 |
SiC junction barrier controlled schottky rectifier
Grant 9,368,650 - Yen , et al. June 14, 2 | 2016-06-14 |
Silicon Carbide Semiconductor Device And Method Of Manufacture Thereof
App 20160141412 - YEN; Cheng-Tyng ; et al. | 2016-05-19 |
Silicon Carbide Field Effect Transistor
App 20160126346 - Hung; Chien-Chung ; et al. | 2016-05-05 |
Silicon Carbide Semiconductor Device
App 20160111533 - YEN; Cheng-Tyng ; et al. | 2016-04-21 |
Silicon carbide semiconductor device
Grant 9,246,016 - Yen , et al. January 26, 2 | 2016-01-26 |
Silicon Carbide Semiconductor Device
App 20160005883 - Yen; Cheng-Tyng ; et al. | 2016-01-07 |
Integrated device having MOSFET cell array embedded with barrier Schottky diode
Grant 9,209,293 - Hung , et al. December 8, 2 | 2015-12-08 |
Semiconductor Structure
App 20150287818 - YEN; Cheng-Tyng ; et al. | 2015-10-08 |
Silicon carbide power device equipped with termination structure
Grant 9,018,640 - Hung , et al. April 28, 2 | 2015-04-28 |
Silicon Carbide Power Device Equipped With Termination Structure
App 20150102362 - Hung; Chien-Chung ; et al. | 2015-04-16 |
Schottky barrier diode and fabricating method thereof
Grant 8,956,963 - Yen , et al. February 17, 2 | 2015-02-17 |
Schottky barrier device having a plurality of double-recessed trenches
Grant 8,878,327 - Yen , et al. November 4, 2 | 2014-11-04 |
Stepped trench MOSFET and method of fabricating the same
Grant 8,841,721 - Yen , et al. September 23, 2 | 2014-09-23 |
Trench MOS transistor having a trench doped region formed deeper than the trench gate
Grant 8,835,935 - Hung , et al. September 16, 2 | 2014-09-16 |
SiC-based trench-type schottky device
Grant 8,766,279 - Yen , et al. July 1, 2 | 2014-07-01 |
Sic-based Trench-type Schottky Device
App 20140175457 - Yen; Cheng-Tyng ; et al. | 2014-06-26 |
Integrated Device Having Mosfet Cell Array Embedded With Barrier Schottky Diode
App 20140175559 - Hung; Chien-Chung ; et al. | 2014-06-26 |
Stepped Trench Mosfet And Method Of Fabricating The Same
App 20140167151 - Yen; Cheng-Tyng ; et al. | 2014-06-19 |
Sic Trench Gate Transistor With Segmented Field Shielding Region And Method Of Fabricating The Same
App 20140159053 - Chen; Young-Shying ; et al. | 2014-06-12 |
Schottky Barrier Diode and Fabricating Method Thereof
App 20140145207 - YEN; Cheng-Tyng ; et al. | 2014-05-29 |
Double-recessed Trench Schottky Barrier Device
App 20140001489 - YEN; Cheng-Tyng ; et al. | 2014-01-02 |
Trench Metal Oxide Semiconductor Transistor Device And Manufacturing Method Thereof
App 20130161736 - Hung; Chien-Chung ; et al. | 2013-06-27 |
3-d Multi-wafer Stacked Semiconductor Structure And Method For Manufacturing The Same
App 20110057321 - Wang; Sum-Min ; et al. | 2011-03-10 |
Method and apparatus for fabricating a thin film bulk acoustic resonator
Grant 6,794,212 - Lee September 21, 2 | 2004-09-21 |
Method of electroless plating copper on nitride barrier
Grant 6,713,377 - Lee , et al. March 30, 2 | 2004-03-30 |
Method of electroless plating copper on nitride barrier
Grant 6,660,625 - Lee , et al. December 9, 2 | 2003-12-09 |
Method of electroless plating copper on nitride barrier
App 20030060040 - Lee, Chwan-Ying ; et al. | 2003-03-27 |
Method of electroless plating copper on nitride barrier
App 20030054633 - Lee, Chwan-Ying ; et al. | 2003-03-20 |
Method and apparatus for fabricating a thin film bulk acoustic resonator
App 20030003612 - Lee, Chwan-Ying | 2003-01-02 |
Method of electroless plating copper on nitride barrier
Grant 6,436,816 - Lee , et al. August 20, 2 | 2002-08-20 |
Nickel-silicide formation by electroless Ni deposition on polysilicon
Grant 6,406,743 - Lee , et al. June 18, 2 | 2002-06-18 |
Method for forming SiGe bipolar transistor
Grant 6,333,235 - Lee , et al. December 25, 2 | 2001-12-25 |
Copper metallization of USLI by electroless process
Grant 6,180,523 - Lee , et al. January 30, 2 | 2001-01-30 |
Fabrication process for a single polysilicon layer, bipolar junction transistor featuring reduced junction capacitance
Grant 6,180,478 - Lee , et al. January 30, 2 | 2001-01-30 |
Electroless gold plating method for forming inductor structures
Grant 6,030,877 - Lee , et al. February 29, 2 | 2000-02-29 |
Electroless copper plating method for forming integrated circuit structures
Grant 5,801,100 - Lee , et al. September 1, 1 | 1998-09-01 |
Process to manufacture a vertical gate-enhanced bipolar transistor
Grant 5,776,813 - Huang , et al. July 7, 1 | 1998-07-07 |
Method for producing electroless barrier layer and solder bump on chip
Grant 5,583,073 - Lin , et al. December 10, 1 | 1996-12-10 |
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