| Patent | Date |
|---|
Asymmetric threshold voltages in semiconductor devices
Grant 11,444,165 - Ando , et al. September 13, 2 | 2022-09-13 |
Setting an upper bound on RRAM resistance
Grant 11,430,514 - Kim , et al. August 30, 2 | 2022-08-30 |
Confined work function material for gate-all around transistor devices
Grant 11,430,660 - Zhang , et al. August 30, 2 | 2022-08-30 |
Vertical fin field effect transistor devices with self-aligned source and drain junctions
Grant 11,424,343 - Cheng , et al. August 23, 2 | 2022-08-23 |
Integrated Circuit Device And Method Of Manufacturing The Same
App 20220262728 - Lee; Choonghyun ; et al. | 2022-08-18 |
Wimpy vertical transport field effect transistor with dipole liners
Grant 11,404,581 - Reznicek , et al. August 2, 2 | 2022-08-02 |
Setting An Upper Bound On Rram Resistance
App 20220223205 - Kim; Youngseok ; et al. | 2022-07-14 |
Multi threshold voltage for nanosheet
Grant 11,387,342 - Zhang , et al. July 12, 2 | 2022-07-12 |
Vertical fin field effect transistor devices with self-aligned source and drain junctions
Grant 11,380,778 - Cheng , et al. July 5, 2 | 2022-07-05 |
Wimpy Vertical Transport Field Effect Transistor With Dipole Liners
App 20220199834 - Reznicek; Alexander ; et al. | 2022-06-23 |
Multi Threshold Voltage For Nanosheet
App 20220199796 - Zhang; Jingyun ; et al. | 2022-06-23 |
Inverse T-shaped contact structures having air gap spacers
Grant 11,362,193 - Cheng , et al. June 14, 2 | 2022-06-14 |
Integrated circuit device and method of manufacturing the same
Grant 11,362,031 - Lee , et al. June 14, 2 | 2022-06-14 |
Nanosheet transistor having abrupt junctions between the channel nanosheets and the source/drain extension regions
Grant 11,355,649 - Lee , et al. June 7, 2 | 2022-06-07 |
Resistive random access memory integrated under a vertical field effect transistor
Grant 11,355,553 - Reznicek , et al. June 7, 2 | 2022-06-07 |
Vertical Transport Cmos Transistors With Asymmetric Threshold Voltage
App 20220165850 - Ando; Takashi ; et al. | 2022-05-26 |
Resistive Memory Array
App 20220165947 - Kim; Youngseok ; et al. | 2022-05-26 |
Homogeneous densification of fill layers for controlled reveal of vertical fins
Grant 11,342,230 - Cheng , et al. May 24, 2 | 2022-05-24 |
Buried Power Rail For Scaled Vertical Transport Field Effect Transistor
App 20220148969 - Xie; Ruilong ; et al. | 2022-05-12 |
Nanosheet transistors with thin inner spacers and tight pitch gate
Grant 11,329,143 - Cheng , et al. May 10, 2 | 2022-05-10 |
Contact source/drain resistance
Grant 11,322,588 - Lie , et al. May 3, 2 | 2022-05-03 |
Forming shallow trench isolation regions for nanosheet field-effect transistor devices using sacrificial epitaxial layer
Grant 11,322,408 - Loubet , et al. May 3, 2 | 2022-05-03 |
Oxygen Vacancy Passivation In High-k Dielectrics For Vertical Transport Field Effect Transistor
App 20220130732 - Lee; Choonghyun ; et al. | 2022-04-28 |
Silicon germanium FinFET with low gate induced drain leakage current
Grant 11,316,015 - Mochizuki , et al. April 26, 2 | 2022-04-26 |
Gate-all-around Field-effect Transistor With Asymmetric Threshold Voltage
App 20220123144 - Zhang; Jingyun ; et al. | 2022-04-21 |
Method and structure for forming a vertical field-effect transistor
Grant 11,302,799 - Xu , et al. April 12, 2 | 2022-04-12 |
Wrap around contact for nanosheet source drain epitaxy
Grant 11,302,813 - Reznicek , et al. April 12, 2 | 2022-04-12 |
Vertical Transport Field-effect Transistors Having Germanium Channel Surfaces
App 20220093473 - Lee; Choonghyun ; et al. | 2022-03-24 |
Heterojunction bipolar transistor with a silicon oxide layer on a silicon germanium base
Grant 11,282,947 - Ok , et al. March 22, 2 | 2022-03-22 |
Multi-threshold Voltage Gate-all-around Transistors
App 20220085014 - ZHANG; Jingyun ; et al. | 2022-03-17 |
Replacement metal gate process for vertical transport field-effect transistor with self-aligned shared contacts
Grant 11,271,106 - Bao , et al. March 8, 2 | 2022-03-08 |
Heterojunction Bipolar Transistor With A Silicon Oxide Layer On A Silicon Germanium Base
App 20220069109 - Ok; Injo ; et al. | 2022-03-03 |
Replacement metal gate process for vertical transport field-effect transistors with multiple threshold voltages
Grant 11,257,721 - Bao , et al. February 22, 2 | 2022-02-22 |
Fin field-effect transistors with enhanced strain and reduced parasitic capacitance
Grant 11,257,934 - Cheng , et al. February 22, 2 | 2022-02-22 |
Oxygen vacancy passivation in high-k dielectrics for vertical transport field effect transistor
Grant 11,251,094 - Lee , et al. February 15, 2 | 2022-02-15 |
Approach to control over-etching of bottom spacers in vertical fin field effect transistor devices
Grant 11,251,285 - Bao , et al. February 15, 2 | 2022-02-15 |
Uniform Interfacial Layer On Vertical Fin Sidewalls Of Vertical Transport Field-effect Transistors
App 20220045196 - Mochizuki; Shogo ; et al. | 2022-02-10 |
Gate last vertical transport field effect transistor
Grant 11,245,025 - Lee , et al. February 8, 2 | 2022-02-08 |
Maskless top source/drain epitaxial growth on vertical transport field effect transistor
Grant 11,244,870 - Lee , et al. February 8, 2 | 2022-02-08 |
Fabricating a gate-all-around (GAA) field effect transistor having threshold voltage asymmetry by thinning source side lateral end portion of the nanosheet layer
Grant 11,239,359 - Zhang , et al. February 1, 2 | 2022-02-01 |
Uniform interfacial layer on vertical fin sidewalls of vertical transport field-effect transistors
Grant 11,227,937 - Mochizuki , et al. January 18, 2 | 2022-01-18 |
Self-limiting Liners For Increasing Contact Trench Volume In N-type And P-type Transistors
App 20220005735 - Cheng; Kangguo ; et al. | 2022-01-06 |
Device with pure silicon oxide layer on silicon-germanium layer
Grant 11,217,450 - Ando , et al. January 4, 2 | 2022-01-04 |
Using selectively formed cap layers to form self-aligned contacts to source/drain regions
Grant 11,211,462 - Park , et al. December 28, 2 | 2021-12-28 |
Fabrication of field effect transistors with different threshold voltages through modified channel interfaces
Grant 11,211,379 - Ando , et al. December 28, 2 | 2021-12-28 |
Vertical field effect transistor with reduced parasitic capacitance
Grant 11,205,728 - Lee , et al. December 21, 2 | 2021-12-21 |
Vertical field effect transistor and method of manufacturing a vertical field effect transistor
Grant 11,201,241 - Lee , et al. December 14, 2 | 2021-12-14 |
Gate channel length control in VFET
Grant 11,201,092 - Ok , et al. December 14, 2 | 2021-12-14 |
Inner spacer for nanosheet transistors
Grant 11,195,912 - Cheng , et al. December 7, 2 | 2021-12-07 |
Vertical transport field-effect transistors having germanium channel surfaces
Grant 11,195,764 - Lee , et al. December 7, 2 | 2021-12-07 |
Dual Damascene Crossbar Array For Disabling A Defective Resistive Switching Device In The Array
App 20210375389 - Maniscalco; Joseph F. ; et al. | 2021-12-02 |
FinFET 2T2R RRAM
Grant 11,189,661 - Reznicek , et al. November 30, 2 | 2021-11-30 |
Self-limiting liners for increasing contact trench volume in n-type and p-type transistors
Grant 11,183,430 - Cheng , et al. November 23, 2 | 2021-11-23 |
Formation of air gap spacers for reducing parasitic capacitance
Grant 11,183,577 - Cheng , et al. November 23, 2 | 2021-11-23 |
Fabrication of field effect transistors with different threshold voltages through modified channel interfaces
Grant 11,177,257 - Ando , et al. November 16, 2 | 2021-11-16 |
Structure And Method To Fabricate Resistive Memory With Vertical Pre-determined Filament
App 20210343938 - PARK; Chanro ; et al. | 2021-11-04 |
Replacement bottom electrode structure process to form misalignment tolerate MRAM with high yield
Grant 11,165,017 - Hashemi , et al. November 2, 2 | 2021-11-02 |
Vertical FET with asymmetric threshold voltage and channel thicknesses
Grant 11,158,715 - Lee , et al. October 26, 2 | 2021-10-26 |
Long channel optimization for gate-all-around transistors
Grant 11,152,510 - Zhang , et al. October 19, 2 | 2021-10-19 |
Gate-last process for vertical transport field-effect transistor
Grant 11,145,555 - Mochizuki , et al. October 12, 2 | 2021-10-12 |
Vertical fin-type bipolar junction transistor with self-aligned base contact
Grant 11,139,380 - Lee , et al. October 5, 2 | 2021-10-05 |
Replacement-channel Fabrication Of Iii-v Nanosheet Devices
App 20210305407 - Zhang; Jingyun ; et al. | 2021-09-30 |
Multi-threshold voltage gate-all-around transistors
Grant 11,133,309 - Zhang , et al. September 28, 2 | 2021-09-28 |
Nanosheet P-type transistor with oxygen reservoir
Grant 11,133,305 - Ando , et al. September 28, 2 | 2021-09-28 |
Gate-all-around transistor structure
Grant 11,121,218 - Zhang , et al. September 14, 2 | 2021-09-14 |
Lateral semiconductor nanotube with hexagonal shape
Grant 11,120,991 - Li , et al. September 14, 2 | 2021-09-14 |
Stacked nanosheets with self-aligned inner spacers and metallic source/drain
Grant 11,121,232 - Lee , et al. September 14, 2 | 2021-09-14 |
Using Selectively Formed Cap Layers To Form Self-aligned Contacts To Source/drain Regions
App 20210280690 - Park; Chanro ; et al. | 2021-09-09 |
Vertical Field Effect Transistor With Low-resistance Bottom Source-drain Contact
App 20210273115 - Lee; Choonghyun ; et al. | 2021-09-02 |
Nanosheet transistors with different gate dielectrics and workfunction metals
Grant 11,101,182 - Cheng , et al. August 24, 2 | 2021-08-24 |
Structure and method to fabricate resistive memory with vertical pre-determined filament
Grant 11,094,883 - Park , et al. August 17, 2 | 2021-08-17 |
Oxide isolated fin-type field-effect transistors
Grant 11,094,801 - Bao , et al. August 17, 2 | 2021-08-17 |
Oxygen Vacancy Passivation In High-k Dielectrics For Vertical Transport Field Effect Transistor
App 20210249315 - Lee; Choonghyun ; et al. | 2021-08-12 |
Asymmetric threshold voltage VTFET with intrinsic dual channel epitaxy
Grant 11,088,139 - Lee , et al. August 10, 2 | 2021-08-10 |
Channel strain formation in vertical transport FETS with dummy stressor materials
Grant 11,088,279 - Lee , et al. August 10, 2 | 2021-08-10 |
Source/drain for gate-all-around devices
Grant 11,081,404 - Zhang , et al. August 3, 2 | 2021-08-03 |
Replacement-channel fabrication of III-V nanosheet devices
Grant 11,081,567 - Zhang , et al. August 3, 2 | 2021-08-03 |
Stacked Resistive Memory With Individual Switch Control
App 20210233960 - Ando; Takashi ; et al. | 2021-07-29 |
Threshold Voltage Adjustment By Inner Spacer Material Selection
App 20210233818 - Ando; Takashi ; et al. | 2021-07-29 |
Nanosheet with buried gate contact
Grant 11,075,301 - Zhang , et al. July 27, 2 | 2021-07-27 |
Nanosheet electrostatic discharge structure
Grant 11,075,273 - Reznicek , et al. July 27, 2 | 2021-07-27 |
Techniques for enhancing vertical gate-all-around FET performance
Grant 11,069,686 - Ok , et al. July 20, 2 | 2021-07-20 |
Nanosheet transistors with different gate dielectrics and workfunction metals
Grant 11,069,577 - Cheng , et al. July 20, 2 | 2021-07-20 |
Self-limiting fin spike removal
Grant 11,063,129 - Cheng , et al. July 13, 2 | 2021-07-13 |
Vertical transistors with top spacers
Grant 11,063,134 - Zhang , et al. July 13, 2 | 2021-07-13 |
Vertical transistors having uniform channel length
Grant 11,062,955 - Lee , et al. July 13, 2 | 2021-07-13 |
Forming bottom source and drain extension on vertical transport FET (VTFET)
Grant 11,063,147 - Mochizuki , et al. July 13, 2 | 2021-07-13 |
Vertical Field Effect Transistor And Method Of Manufacturing A Vertical Field Effect Transistor
App 20210210634 - Lee; Choonghyun ; et al. | 2021-07-08 |
Nanosheet With Buried Gate Contact
App 20210202749 - Zhang; Jingyun ; et al. | 2021-07-01 |
Tri-layer Sti Liner For Nanosheet Leakage Control
App 20210202325 - Lee; Choonghyun ; et al. | 2021-07-01 |
Long channel nanosheet FET having tri-layer spacers
Grant 11,049,979 - Miao , et al. June 29, 2 | 2021-06-29 |
Wrap Around Contact For Nanosheet Source Drain Epitaxy
App 20210193829 - Reznicek; Alexander ; et al. | 2021-06-24 |
Vertical field effect transistor with low-resistance bottom source-drain contact
Grant 11,043,598 - Lee , et al. June 22, 2 | 2021-06-22 |
Complementary Metal Oxide Semiconductor Device Having Fin Field Effect Transistors With A Common Metal Gate
App 20210183710 - Ando; Takashi ; et al. | 2021-06-17 |
Stacked resistive memory with individual switch control
Grant 11,037,986 - Ando , et al. June 15, 2 | 2021-06-15 |
Vertical nano-wire complimentary metal-oxide-semiconductor transistor with cylindrical III-V compound and germanium channel
Grant 11,038,064 - Ok , et al. June 15, 2 | 2021-06-15 |
Threshold voltage adjustment by inner spacer material selection
Grant 11,037,832 - Ando , et al. June 15, 2 | 2021-06-15 |
Resistive Random Access Memory Integrated Under A Vertical Field Effect Transistor
App 20210175285 - Reznicek; Alexander ; et al. | 2021-06-10 |
Gate cap last for self-aligned contact
Grant 11,031,295 - Park , et al. June 8, 2 | 2021-06-08 |
Vertical FET with differential top spacer
Grant 11,024,724 - Ando , et al. June 1, 2 | 2021-06-01 |
Asymmetric channel threshold voltage
Grant 11,024,740 - Lee , et al. June 1, 2 | 2021-06-01 |
Multivalent oxide cap for multiple work function gate stacks on high mobility channel materials
Grant 11,018,062 - Ando , et al. May 25, 2 | 2021-05-25 |
Reduction of metal resistance in vertical ReRAM cells
Grant 11,018,192 - Ando , et al. May 25, 2 | 2021-05-25 |
Resistive Random-access Memory
App 20210151670 - Cheng; Kangguo ; et al. | 2021-05-20 |
Nanosheet Transistor Having Abrupt Junctions Between The Channel Nanosheets And The Source/drain Extension Regions
App 20210151608 - Lee; Choonghyun ; et al. | 2021-05-20 |
Gate-all-around Transistor Structure
App 20210151566 - Zhang; Jingyun ; et al. | 2021-05-20 |
Long Channel Nanosheet Fet Having Tri-layer Spacers
App 20210151607 - Miao; Xin ; et al. | 2021-05-20 |
Polymer composite strengthened with carbon fiber surface-modified by plasma treatment and method for producing polymer composite
Grant 11,008,428 - Lim , et al. May 18, 2 | 2021-05-18 |
Formation of a partial air-gap spacer
Grant 11,011,617 - Lee , et al. May 18, 2 | 2021-05-18 |
Vertical transport field-effect transistor (VFET) with dual top spacer
Grant 11,011,624 - Mochizuki , et al. May 18, 2 | 2021-05-18 |
Structure And Method To Fabricate Resistive Memory With Vertical Pre-determined Filament
App 20210135108 - PARK; Chanro ; et al. | 2021-05-06 |
Gate Stack Quality For Gate-all-around Field-effect Transistors
App 20210126018 - Zhang; Jingyun ; et al. | 2021-04-29 |
Methods and structures for cutting lines or spaces in a tight pitch structure
Grant 10,991,584 - Xu , et al. April 27, 2 | 2021-04-27 |
Vertical vacuum channel transistor
Grant 10,991,537 - Ok , et al. April 27, 2 | 2021-04-27 |
Bottom Spacer Structure For Vertical Field Effect Transistor And Method Of Forming Same
App 20210119020 - Mochizuki; Shogo ; et al. | 2021-04-22 |
Confined Work Function Material For Gate-all Around Transistor Devices
App 20210118683 - Zhang; Jingyun ; et al. | 2021-04-22 |
Silicon Germanium Finfet With Low Gate Induced Drain Leakage Current
App 20210118998 - Mochizuki; Shogo ; et al. | 2021-04-22 |
Vertical Fin Field Effect Transistor Devices With Reduced Top Source/drain Variability And Lower Resistance
App 20210119019 - Cheng; Kangguo ; et al. | 2021-04-22 |
Vertical field-effect transistor including a fin having sidewalls with a tapered bottom profile
Grant 10,985,273 - Yeung , et al. April 20, 2 | 2021-04-20 |
Resistive random-access memory
Grant 10,985,315 - Cheng , et al. April 20, 2 | 2021-04-20 |
Gate stack optimization for wide and narrow nanosheet transistor devices
Grant 10,985,069 - Zhang , et al. April 20, 2 | 2021-04-20 |
Reduction of top source/drain external resistance and parasitic capacitance in vertical transistors
Grant 10,985,274 - Lee , et al. April 20, 2 | 2021-04-20 |
Vertical transport fin field effect transistor with asymmetric channel profile
Grant 10,985,257 - Lee , et al. April 20, 2 | 2021-04-20 |
Asymmetric Threshold Voltages In Semiconductor Devices
App 20210111255 - Ando; Takashi ; et al. | 2021-04-15 |
Forming Shallow Trench Isolation Regions For Nanosheet Field-effect Transistor Devices Using Sacrificial Epitaxial Layer
App 20210111077 - Loubet; Nicolas ; et al. | 2021-04-15 |
Fabrication Of Silicon Germanium Channel And Silicon/silicon Germanium Dual Channel Field-effect Transistors
App 20210111078 - Lee; ChoongHyun ; et al. | 2021-04-15 |
Contact Source/drain Resistance
App 20210111246 - Lie; Fee Li ; et al. | 2021-04-15 |
Tri-layer STI liner for nanosheet leakage control
Grant 10,978,356 - Lee , et al. April 13, 2 | 2021-04-13 |
Self-aligned contact with metal-insulator transition materials
Grant 10,978,572 - Lee , et al. April 13, 2 | 2021-04-13 |
Self-aligned contact with metal-insulator transition materials
Grant 10,978,571 - Lee , et al. April 13, 2 | 2021-04-13 |
Resistive Switching Device Having Controlled Filament Formation
App 20210104664 - Reznicek; Alexander ; et al. | 2021-04-08 |
Extreme ultraviolet patterning process with resist hardening
Grant 10,971,362 - Park , et al. April 6, 2 | 2021-04-06 |
Low contact resistance nanowire FETs
Grant 10,971,584 - Xu , et al. April 6, 2 | 2021-04-06 |
Method of forming a complementary metal oxide semiconductor device having fin field effect transistors with a common metal gate
Grant 10,971,407 - Ando , et al. April 6, 2 | 2021-04-06 |
Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between adjacent gates
Grant 10,971,585 - Lee , et al. April 6, 2 | 2021-04-06 |
Oxygen reservoir for low threshold voltage P-type MOSFET
Grant 10,971,593 - Ando , et al. April 6, 2 | 2021-04-06 |
Reduction of multi-threshold voltage patterning damage in nanosheet device structure
Grant 10,957,698 - Lee , et al. March 23, 2 | 2021-03-23 |
Formation of air gap spacers for reducing parasitic capacitance
Grant 10,957,778 - Cheng , et al. March 23, 2 | 2021-03-23 |
Resistive random-access memory array with reduced switching resistance variability
Grant 10,957,742 - Ando , et al. March 23, 2 | 2021-03-23 |
ILD gap fill for memory device stack array
Grant 10,950,549 - Seo , et al. March 16, 2 | 2021-03-16 |
FinFET 2T2R RRAM
App 20210074765 - Reznicek; Alexander ; et al. | 2021-03-11 |
Confined work function material for gate-all around transistor devices
Grant 10,943,787 - Zhang , et al. March 9, 2 | 2021-03-09 |
Semiconductor-on-insulator finFET devices with high thermal conductivity dielectrics
Grant 10,943,924 - Lee , et al. March 9, 2 | 2021-03-09 |
Mask removal for tight-pitched nanostructures
Grant 10,943,816 - Li , et al. March 9, 2 | 2021-03-09 |
Asymmetric threshold voltage VTFET with intrinsic dual channel epitaxy
Grant 10,943,903 - Lee , et al. March 9, 2 | 2021-03-09 |
Fabrication of silicon germanium channel and silicon/silicon germanium dual channel field-effect transistors
Grant 10,943,835 - Lee , et al. March 9, 2 | 2021-03-09 |
Nanosheet substrate isolated source/drain epitaxy via airgap
Grant 10,937,862 - Reznicek , et al. March 2, 2 | 2021-03-02 |
Vertical transport FETs having a gradient threshold voltage
Grant 10,937,883 - Lee , et al. March 2, 2 | 2021-03-02 |
Gate stack designs for analog and logic devices in dual channel Si/SiGe CMOS
Grant 10,937,648 - Lee , et al. March 2, 2 | 2021-03-02 |
Integrated Circuit Device And Method Of Manufacturing The Same
App 20210057339 - Lee; Choonghyun ; et al. | 2021-02-25 |
Bottom channel isolation in nanosheet transistors
Grant 10,930,793 - Chao , et al. February 23, 2 | 2021-02-23 |
Maskless epitaxial growth of phosphorus-doped Si and boron-doped SiGe (Ge) for advanced source/drain contact
Grant 10,930,567 - Lee , et al. February 23, 2 | 2021-02-23 |
Space deposition between source/drain and sacrificial layers
Grant 10,930,758 - Mochizuki , et al. February 23, 2 | 2021-02-23 |
Multiple work function nanosheet field effect transistor using sacrificial silicon germanium growth
Grant 10,930,762 - Ando , et al. February 23, 2 | 2021-02-23 |
Method And Apparatus For Treating Substrate
App 20210050210 - SEO; Yong-Jun ; et al. | 2021-02-18 |
Co-integration of high carrier mobility PFET and NFET devices on the same substrate using low temperature condensation
Grant 10,923,403 - Ando , et al. February 16, 2 | 2021-02-16 |
Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device
Grant 10,916,432 - Ando , et al. February 9, 2 | 2021-02-09 |
Silicon germanium FinFET with low gate induced drain leakage current
Grant 10,916,633 - Mochizuki , et al. February 9, 2 | 2021-02-09 |
Vertical fin field effect transistor devices with reduced top source/drain variability and lower resistance
Grant 10,916,638 - Cheng , et al. February 9, 2 | 2021-02-09 |
Asymmetric threshold voltage FinFET device by partial channel doping variation
Grant 10,916,659 - Reznicek , et al. February 9, 2 | 2021-02-09 |
Vertical field effect transistor with reduced external resistance
Grant 10,916,649 - Li , et al. February 9, 2 | 2021-02-09 |
Method and structure for forming vertical transistors with various gate lengths
Grant 10,910,494 - Cheng , et al. February 2, 2 | 2021-02-02 |
Forming shallow trench isolation regions for nanosheet field-effect transistor devices using sacrificial epitaxial layer
Grant 10,910,273 - Loubet , et al. February 2, 2 | 2021-02-02 |
External resistance reduction with embedded bottom source/drain for vertical transport FET
Grant 10,903,318 - Lee , et al. January 26, 2 | 2021-01-26 |
Vertical transport FET devices having a sacrificial doped layer
Grant 10,903,339 - Lee , et al. January 26, 2 | 2021-01-26 |
Asymmetric threshold voltages in semiconductor devices
Grant 10,896,962 - Ando , et al. January 19, 2 | 2021-01-19 |
Formation of wrap-around-contact to reduce contact resistivity
Grant 10,896,965 - Carr , et al. January 19, 2 | 2021-01-19 |
Wrap-around-contact structure for top source/drain in vertical FETS
Grant 10,892,336 - Lee , et al. January 12, 2 | 2021-01-12 |
Vertical field effect transistor with reduced gate to source/drain capacitance
Grant 10,892,325 - Li , et al. January 12, 2 | 2021-01-12 |
Vertical field effect transistor with reduced gate to source/drain capacitance
Grant 10,892,324 - Li , et al. January 12, 2 | 2021-01-12 |
Method and structure for forming a vertical field-effect transistor using a replacement metal gate process
Grant 10,892,195 - Lee , et al. January 12, 2 | 2021-01-12 |
Nanosheet transistor having abrupt junctions between the channel nanosheets and the source/drain extension regions
Grant 10,892,368 - Lee , et al. January 12, 2 | 2021-01-12 |
Gate first technique in vertical transport FET using doped silicon gates with silicide
Grant 10,892,339 - Bao , et al. January 12, 2 | 2021-01-12 |
I/O device scheme for gate-all-around transistors
Grant 10,886,368 - Zhang , et al. January 5, 2 | 2021-01-05 |
Formation of wrap-around-contact to reduce contact resistivity
Grant 10,886,376 - Carr , et al. January 5, 2 | 2021-01-05 |
Vertical array of resistive switching devices having a tunable oxygen vacancy concentration
Grant 10,886,334 - Ando , et al. January 5, 2 | 2021-01-05 |
Method and structure for forming a vertical field-effect transistor using a replacement metal gate process
Grant 10,886,183 - Lee , et al. January 5, 2 | 2021-01-05 |
Formation of self-limited inner spacer for gate-all-around nanosheet FET
Grant 10,886,369 - Zhang , et al. January 5, 2 | 2021-01-05 |
Vertical transport Fin field effect transistors combined with resistive memory structures
Grant 10,879,311 - Lee , et al. December 29, 2 | 2020-12-29 |
Vertically stacked nFETs and pFETs with gate-all-around structure
Grant 10,879,352 - Zhang , et al. December 29, 2 | 2020-12-29 |
Boosted vertical field-effect transistor
Grant 10,879,390 - Ok , et al. December 29, 2 | 2020-12-29 |
Stacked Resistive Memory With Individual Switch Control
App 20200403034 - Ando; Takashi ; et al. | 2020-12-24 |
Vertical Fet With Asymmetric Threshold Voltage And Channel Thicknesses
App 20200403065 - Lee; Choonghyun ; et al. | 2020-12-24 |
OXYGEN RESERVOIR FOR LOW Vth PFET
App 20200395458 - Ando; Takashi ; et al. | 2020-12-17 |
Complementary Metal Oxide Semiconductor Device Having Fin Field Effect Transistors With A Common Metal Gate
App 20200388544 - Ando; Takashi ; et al. | 2020-12-10 |
Asymmetric Threshold Voltages In Semiconductor Devices
App 20200381520 - Ando; Takashi ; et al. | 2020-12-03 |
Gate Cap Last For Self-aligned Contact
App 20200381306 - Park; Chanro ; et al. | 2020-12-03 |
Threshold Voltage Adjustment By Inner Spacer Material Selection
App 20200381305 - Ando; Takashi ; et al. | 2020-12-03 |
Vertical Field Effect Transistor With Reduced Parasitic Capacitance
App 20200373434 - Lee; Choonghyun ; et al. | 2020-11-26 |
Multi-threshold Voltage Gate-all-around Transistors
App 20200373300 - ZHANG; Jingyun ; et al. | 2020-11-26 |
Formation Of An Air Gap Spacer Using Sacrificial Spacer Layer
App 20200373204 - Cheng; Kangguo ; et al. | 2020-11-26 |
Asymmetric Channel Threshold Voltage
App 20200373429 - Lee; Choonghyun ; et al. | 2020-11-26 |
Nanosheet P-type Transistor With Oxygen Reservoir
App 20200365584 - Ando; Takashi ; et al. | 2020-11-19 |
Planar gate-insulated vacuum channel transistor
Grant 10,840,052 - Ok , et al. November 17, 2 | 2020-11-17 |
Formation of air gap spacers for reducing parasitic capacitance
Grant 10,840,349 - Cheng , et al. November 17, 2 | 2020-11-17 |
Vertical field-effect transistor devices with non-uniform thickness bottom spacers
Grant 10,840,145 - Li , et al. November 17, 2 | 2020-11-17 |
Nanosheet Transistor Having Abrupt Junctions Between The Channel Nanosheets And The Source/drain Extension Regions
App 20200357931 - Lee; Choonghyun ; et al. | 2020-11-12 |
Gate Last Vertical Transport Field Effect Transistor
App 20200357898 - Lee; Choonghyun ; et al. | 2020-11-12 |
Tri-layer Sti Liner For Nanosheet Leakage Control
App 20200357703 - Lee; Choonghyun ; et al. | 2020-11-12 |
Gate stack reliability in vertical transport field effect transistors
Grant 10,833,172 - Lee , et al. November 10, 2 | 2020-11-10 |
Reduced static random access memory (SRAM) device foot print through controlled bottom source/drain placement
Grant 10,832,975 - Bao , et al. November 10, 2 | 2020-11-10 |
Single-fin CMOS transistors with embedded and cladded source/drain structures
Grant 10,832,969 - Miao , et al. November 10, 2 | 2020-11-10 |
Self-aligned silicide/germanide formation to reduce external resistance in a vertical field-effect transistor
Grant 10,832,970 - Lee , et al. November 10, 2 | 2020-11-10 |
Complementary metal-oxide-semiconductor (CMOS) nanosheet devices with epitaxial source/drains and replacement metal gate structures
Grant 10,833,168 - Seo , et al. November 10, 2 | 2020-11-10 |
Techniques for forming vertical transport FET having gate stacks with a combination of work function metals
Grant 10,833,200 - Lee , et al. November 10, 2 | 2020-11-10 |
Formation of an air gap spacer using sacrificial spacer layer
Grant 10,832,962 - Cheng , et al. November 10, 2 | 2020-11-10 |
Quadruple gate dielectric for gate-all-around transistors
Grant 10,832,960 - Zhang , et al. November 10, 2 | 2020-11-10 |
Methods and structures for forming uniform fins when using hardmask patterns
Grant 10,832,955 - Xu , et al. November 10, 2 | 2020-11-10 |
Airgap isolation for backend embedded memory stack pillar arrays
Grant 10,832,941 - Seo , et al. November 10, 2 | 2020-11-10 |
Vertical Vacuum Channel Transistor
App 20200350136 - Ok; Injo ; et al. | 2020-11-05 |
Source/drain For Gate-all-around Devices
App 20200350215 - Zhang; Jingyun ; et al. | 2020-11-05 |
Vertical transport field-effect transistor including dual layer top spacer
Grant 10,825,916 - Jagannathan , et al. November 3, 2 | 2020-11-03 |
Nanosheet with selective dipole diffusion into high-k
Grant 10,825,736 - Zhang , et al. November 3, 2 | 2020-11-03 |
Vertical transport FET having multiple threshold voltages with zero-thickness variation of work function metal
Grant 10,818,756 - Lee , et al. October 27, 2 | 2020-10-27 |
VTFET having a V-shaped groove at the top junction region
Grant 10,818,753 - Lee , et al. October 27, 2 | 2020-10-27 |
Vertical Transistors With Top Spacers
App 20200335605 - Zhang; Jingyun ; et al. | 2020-10-22 |
Multi-threshold vertical FETs with common gates
Grant 10,811,413 - Ando , et al. October 20, 2 | 2020-10-20 |
Bottom channel isolation in nanosheet transistors
Grant 10,804,410 - Chao , et al. October 13, 2 | 2020-10-13 |
Source and drain isolation for CMOS nanosheet with one block mask
Grant 10,804,165 - Seo , et al. October 13, 2 | 2020-10-13 |
Mask Removal For Tight-pitched Nanostructures
App 20200321245 - Li; Juntao ; et al. | 2020-10-08 |
Airgap Isolation For Backend Embedded Memory Stack Pillar Arrays
App 20200312704 - Seo; Soon-Cheon ; et al. | 2020-10-01 |
Vertical Transistors Having Uniform Channel Length
App 20200312722 - Lee; Choonghyun ; et al. | 2020-10-01 |
Gate Channel Length Control In Vfet
App 20200312723 - Ok; Injo ; et al. | 2020-10-01 |
Dual channel silicon/silicon germanium complementary metal oxide semiconductor performance with interface engineering
Grant 10,790,199 - Bao , et al. September 29, 2 | 2020-09-29 |
VFET with channel profile control using selective GE oxidation and drive-out
Grant 10,790,357 - Hashemi , et al. September 29, 2 | 2020-09-29 |
Vtfet Having A V-shaped Groove At The Top Junction Region
App 20200303503 - Lee; Choonghyun ; et al. | 2020-09-24 |
Replacement Bottom Electrode Structure Process To Form Misalignment Tolerate Mram With High Yield
App 20200295256 - Hashemi; Pouya ; et al. | 2020-09-17 |
Gate First Technique In Vertical Transport Fet Using Doped Silicon Gates With Silicide
App 20200295147 - BAO; RUQIANG ; et al. | 2020-09-17 |
Vertical fin-type bipolar junction transistor with self-aligned base contact
Grant 10,777,648 - Lee , et al. Sept | 2020-09-15 |
Method and structure of fabricating I-shaped silicon vertical field-effect transistors
Grant 10,777,658 - Lee , et al. Sept | 2020-09-15 |
Self-aligned bottom source/drain epitaxial growth in vertical field effect transistors
Grant 10,777,659 - Lee , et al. Sept | 2020-09-15 |
Removal of work function metal wing to improve device yield in vertical FETs
Grant 10,777,679 - Lee , et al. Sept | 2020-09-15 |
Complementary Metal-oxide-semiconductor (cmos) Nanosheet Devices With Epitaxial Source/drains And Replacement Metal Gate Structu
App 20200287020 - Seo; Soon-Cheon ; et al. | 2020-09-10 |
Phase Change Memory Structure With Efficient Heating System
App 20200287134 - Ok; Injo ; et al. | 2020-09-10 |
High density nanotubes and nanotube devices
Grant 10,770,546 - Lee , et al. Sep | 2020-09-08 |
I/o Device For Gate-all-around Transistors
App 20200279777 - Zhang; Jingyun ; et al. | 2020-09-03 |
Vertical Field-effect Transistor Devices With Non-uniform Thickness Bottom Spacers For Increased Device Performance
App 20200279779 - Li; Juntao ; et al. | 2020-09-03 |
Film stress control for memory device stack
Grant 10,763,431 - Ok , et al. Sep | 2020-09-01 |
I/O device for gate-all-around transistors
Grant 10,763,177 - Zhang , et al. Sep | 2020-09-01 |
Extreme Ultraviolet Patterning Process With Resist Hardening
App 20200273704 - PARK; Chanro ; et al. | 2020-08-27 |
Confined Work Function Material For Gate-all Around Transistor Devices
App 20200273710 - Zhang; Jingyun ; et al. | 2020-08-27 |
Forming Shallow Trench Isolation Regions For Nanosheet Field-effect Transistor Devices Using Sacrificial Epitaxial Layer
App 20200273753 - Loubet; Nicolas ; et al. | 2020-08-27 |
VFET devices with improved performance
Grant 10,756,170 - Cheng , et al. A | 2020-08-25 |
Inner spacer formation and contact resistance reduction in nanosheet transistors
Grant 10,756,175 - Lee , et al. A | 2020-08-25 |
Stacked nanosheet technology with uniform Vth control
Grant 10,756,176 - Hashemi , et al. A | 2020-08-25 |
Nanosheet mosfet with isolated source/drain epitaxy and close junction proximity
Grant 10,756,216 - Miao , et al. A | 2020-08-25 |
Method and structure for forming MRAM device
Grant 10,748,962 - Seo , et al. A | 2020-08-18 |
Vertically stacked nFET and pFET with dual work function
Grant 10,748,994 - Reznicek , et al. A | 2020-08-18 |
Formation of self-aligned bottom spacer for vertical transistors
Grant 10,749,012 - Bao , et al. A | 2020-08-18 |
Vertical transport FETs with asymmetric channel profiles using dipole layers
Grant 10,748,819 - Ando , et al. A | 2020-08-18 |
Quadruple Gate Dielectric For Gate-all-around Transistors
App 20200258785 - A1 | 2020-08-13 |
Vertical Transport Fin Field Effect Transistors Combined With Resistive Memory Structures
App 20200258941 - A1 | 2020-08-13 |
Uniform Interfacial Layer On Vertical Fin Sidewalls Of Vertical Transport Field-effect Transistors
App 20200259000 - A1 | 2020-08-13 |
Mutliple Dielectrics For Gate-all-around Transistors
App 20200258786 - A1 | 2020-08-13 |
Stacked silicon nanotubes
Grant 10,741,677 - Li , et al. A | 2020-08-11 |
Wrap-around-contact structure for top source/drain in vertical FETs
Grant 10,741,652 - Lee , et al. A | 2020-08-11 |
Vfet With Channel Profile Control Using Selective Ge Oxidation And Drive-out
App 20200251558 - Kind Code | 2020-08-06 |
Field-effect transistor unit cells for neural networks with differential weights
Grant 10,734,447 - Ando , et al. | 2020-08-04 |
Multiple dielectrics for gate-all-around transistors
Grant 10,734,286 - Ando , et al. | 2020-08-04 |
FinFET CMOS with asymmetric gate threshold voltage
Grant 10,734,479 - Reznicek , et al. | 2020-08-04 |
Bipolar junction transistor (BJT) with 3D wrap around emitter
Grant 10,734,490 - Lee , et al. | 2020-08-04 |
Oxide Isolated Fin-type Field-effect Transistors
App 20200243670 - Bao; Ruqiang ; et al. | 2020-07-30 |
Reduction Of Top Source/drain External Resistance And Parasitic Capacitance In Vertical Transistors
App 20200243681 - Lee; Choonghyun ; et al. | 2020-07-30 |
Polymer Composite Strengthened With Carbon Fiber Surface-modified By Plasma Treatment And Method For Producing Polymer Composite
App 20200231768 - LIM; Dae-Soon ; et al. | 2020-07-23 |
Maskless Top Source/drain Epitaxial Growth On Vertical Transport Field Effect Transistor
App 20200235015 - Lee; ChoongHyun ; et al. | 2020-07-23 |
Finfet Cmos With Asymmetric Gate Threshold Voltage
App 20200235209 - Reznicek; Alexander ; et al. | 2020-07-23 |
Removal Of Work Function Metal Wing To Improve Device Yield In Vertical Fets
App 20200235238 - Lee; Choonghyun ; et al. | 2020-07-23 |
Vertical transistors having a layer of charge carriers in the extension region for reduced extension region resistance
Grant 10,720,502 - Ando , et al. | 2020-07-21 |
Transistor having an oxide-isolated strained channel fin on a bulk substrate
Grant 10,720,527 - Cheng , et al. | 2020-07-21 |
Forming vertical transistor devices with greater layout flexibility and packing density
Grant 10,720,364 - Cheng , et al. | 2020-07-21 |
Resistive Random-access Memory
App 20200227633 - Cheng; Kangguo ; et al. | 2020-07-16 |
Gate-last process for vertical transport field-effect transistor
Grant 10,714,399 - Mochizuki , et al. | 2020-07-14 |
Fin Field-effect Transistors With Enhanced Strain And Reduced Parasitic Capacitance
App 20200219993 - Cheng; Kangguo ; et al. | 2020-07-09 |
Gate-last Process For Vertical Transport Field-effect Transistor
App 20200219777 - Mochizuki; Shogo ; et al. | 2020-07-09 |
Vertically stacked nFET and pFET with dual work function
Grant 10,707,304 - Reznicek , et al. | 2020-07-07 |
Vertical fin field effect transistor device with reduced gate variation and reduced capacitance
Grant 10,707,329 - Li , et al. | 2020-07-07 |
Gate Stack Optimization For Wide And Narrow Nanosheet Transistor Devices
App 20200211902 - Zhang; Jingyun ; et al. | 2020-07-02 |
Replacement Metal Gate Process For Vertical Transport Field-effect Transistor With Self-aligned Shared Contacts
App 20200212220 - Bao; Ruqiang ; et al. | 2020-07-02 |
Replacement Metal Gate Process For Vertical Transport Field-effect Transistors With Multiple Threshold Voltages
App 20200211908 - Bao; Ruqiang ; et al. | 2020-07-02 |
Multi-threshold voltage gate-all-around field-effect transistor devices with common gates
Grant 10,700,064 - Zhang , et al. | 2020-06-30 |
Co-integration of high carrier mobility PFET and NFET devices on the same substrate using low temperature condensation
Grant 10,699,967 - Ando , et al. | 2020-06-30 |
Vertical array of resistive switching devices having a tunable oxygen vacancy concentration
Grant 10,700,129 - Ando , et al. | 2020-06-30 |
Vertical transport field-effect transistors with uniform threshold voltage
Grant 10,700,062 - Lee , et al. | 2020-06-30 |
Vertical Transistors With Various Gate Lengths
App 20200203528 - Li; Juntao ; et al. | 2020-06-25 |
MTJ stack etch using IBE to achieve vertical profile
Grant 10,693,059 - Seo , et al. | 2020-06-23 |
Gate formation scheme for nanosheet transistors having different work function metals and different nanosheet width dimensions
Grant 10,692,873 - Ando , et al. | 2020-06-23 |
Co-integrated channel and gate formation scheme for nanosheet transistors having separately tuned threshold voltages
Grant 10,692,866 - Ando , et al. | 2020-06-23 |
Vertically stacked nanofluidic channel array
Grant 10,689,245 - Li , et al. | 2020-06-23 |
Vertical transport FET devices having a sacrificial doped layer
Grant 10,686,057 - Lee , et al. | 2020-06-16 |
Germanium condensation for replacement metal gate devices with silicon germanium channel
Grant 10,686,076 - Ando , et al. | 2020-06-16 |
Fabrication Of Field Effect Transistors With Different Threshold Voltages Through Modified Channel Interfaces
App 20200185381 - Ando; Takashi ; et al. | 2020-06-11 |
Fabrication Of Field Effect Transistors With Different Threshold Voltages Through Modified Channel Interfaces
App 20200185380 - Ando; Takashi ; et al. | 2020-06-11 |
Reduction of top source/drain external resistance and parasitic capacitance in vertical transistors
Grant 10,680,102 - Lee , et al. | 2020-06-09 |
Method of manufacturing stacked SiGe nanotubes
Grant 10,680,063 - Li , et al. | 2020-06-09 |
Oxide isolated fin-type field-effect transistors
Grant 10,680,083 - Bao , et al. | 2020-06-09 |
Channel Strain Formation in Vertical Transport FETS with Dummy Stressor Materials
App 20200176333 - Lee; Choonghyun ; et al. | 2020-06-04 |
Vertical Field Effect Transistor With Low-resistance Bottom Source-drain Contact
App 20200176611 - Lee; Choonghyun ; et al. | 2020-06-04 |
Self-aligned base contacts for vertical fin-type bipolar junction transistors
Grant 10672872 - | 2020-06-02 |
Stacked gate all around MOSFET with symmetric inner spacer formed via sacrificial pure Si anchors
Grant 10,672,891 - Hashemi , et al. | 2020-06-02 |
Reducing off-state leakage current in Si/SiGe dual channel CMOS
Grant 10672643 - | 2020-06-02 |
Replacement metal gate process for vertical transport field-effect transistors with multiple threshold voltages
Grant 10,672,670 - Bao , et al. | 2020-06-02 |
Replacement metal gate process for vertical transport field-effect transistor with self-aligned shared contacts
Grant 10,672,905 - Bao , et al. | 2020-06-02 |
External Resistance Reduction With Embedded Bottom Source/drain For Vertical Transport Fet
App 20200168706 - Lee; Choonghyun ; et al. | 2020-05-28 |
Self-limiting liners for increasing contact trench volume in N-type and P-type transistors
Grant 10665511 - | 2020-05-26 |
Reducing gate-induced-drain-leakage current in a transistor by forming an enhanced band gap layer at the channel-to-drain interface
Grant 10665698 - | 2020-05-26 |
Vertical transistors with various gate lengths
Grant 10665714 - | 2020-05-26 |
Vertical Fin Field Effect Transistor Devices With Self-aligned Source And Drain Junctions
App 20200161453 - Cheng; Kangguo ; et al. | 2020-05-21 |
Vertical Fin Field Effect Transistor Devices With Self-aligned Source And Drain Junctions
App 20200161454 - Cheng; Kangguo ; et al. | 2020-05-21 |
Self-aligned Bottom Source/drain Epitaxial Growth In Vertical Field Effect Transistors
App 20200161451 - LEE; Choonghyun ; et al. | 2020-05-21 |
Film Stress Control For Memory Device Stack
App 20200161547 - Ok; Injo ; et al. | 2020-05-21 |
Ild Gap Fill For Memory Device Stack Array
App 20200161250 - Seo; Soon-Cheon ; et al. | 2020-05-21 |
Vertically stacked dual channel nanosheet devices
Grant 10658462 - | 2020-05-19 |
Replacement metal gate processes for vertical transport field-effect transistor
Grant 10658299 - | 2020-05-19 |
Vertical fin type bipolar junction transistor (BJT) device with a self-aligned base contact
Grant 10658495 - | 2020-05-19 |
Vertical Fin-type Bipolar Junction Transistor With Self-aligned Base Contact
App 20200152755 - Lee; Choonghyun ; et al. | 2020-05-14 |
Formation Of Air Gap Spacers For Reducing Parasitic Capacitance
App 20200152759 - Cheng; Kangguo ; et al. | 2020-05-14 |
Stacked Nanosheet Technology With Uniform Vth Control
App 20200152737 - Hashemi; Pouya ; et al. | 2020-05-14 |
Reduction Of Metal Resistance In Vertical Reram Cells
App 20200152702 - Ando; Takashi ; et al. | 2020-05-14 |
Formation Of Air Gap Spacers For Reducing Parasitic Capacitance
App 20200152760 - Cheng; Kangguo ; et al. | 2020-05-14 |
Semiconductor Device And Method Of Forming The Semiconductor Device
App 20200152631 - Chao; Robin Hsin Kuo ; et al. | 2020-05-14 |
Vertical Transport Fets With Asymmetric Channel Profiles Using Dipole Layers
App 20200152762 - Ando; Takashi ; et al. | 2020-05-14 |
Vertical Nano-wire Complimentary Metal-oxide-semiconductor Transistor With Cylindrical Iii-v Compound And Germanium Channel
App 20200152798 - OK; Injo ; et al. | 2020-05-14 |
Techniques for Forming Vertical Transport FET
App 20200152524 - Lee; Choonghyun ; et al. | 2020-05-14 |
Formation Of Air Gap Spacers For Reducing Parasitic Capacitance
App 20200152761 - Cheng; Kangguo ; et al. | 2020-05-14 |
Vertical FET with Differential Top Spacer
App 20200152769 - Ando; Takashi ; et al. | 2020-05-14 |
Vertical Transport Field-effect Transistor Including Dual Layer Top Spacer
App 20200152766 - Jagannathan; Hemanth ; et al. | 2020-05-14 |
Gate Stack Designs for Analog and Logic Devices in Dual Channel Si/SiGe CMOS
App 20200144057 - Lee; Choonghyun ; et al. | 2020-05-07 |
Nanosheet Transistors With Thin Inner Spacers And Tight Pitch Gate
App 20200144396 - Cheng; Kangguo ; et al. | 2020-05-07 |
Forming Bottom Source and Drain Extension on Vertical Transport FET (VTFET)
App 20200144419 - Mochizuki; Shogo ; et al. | 2020-05-07 |
Vertical Transport Fet Having Multiple Threshold Voltages With Zero-thickness Variation Of Work Function Metal
App 20200144378 - LEE; CHOONGHYUN ; et al. | 2020-05-07 |
Self-aligned Contact With Metal-insulator Transistion Materials
App 20200135881 - LEE; CHOONGHYUN ; et al. | 2020-04-30 |
Self-aligned Contact With Metal-insulator Transistion Materials
App 20200135882 - LEE; CHOONGHYUN ; et al. | 2020-04-30 |
Maskless Top Source/drain Epitaxial Growth On Vertical Transport Field Effect Transistor
App 20200135585 - Lee; ChoongHyun ; et al. | 2020-04-30 |
Resistive Random-access Memory
App 20200136035 - Cheng; Kangguo ; et al. | 2020-04-30 |
Reducing Gate-induced-drain-leakage Current In A Transistor By Forming An Enhanced Band Gap Layer At The Channel-to-drain Interf
App 20200127122 - Lee; Choonghyun ; et al. | 2020-04-23 |
Die Bonding Apparatus And Mehod And Substrate Bonding Apparatus And Mehod
App 20200126948 - LEE; HANGLIM ; et al. | 2020-04-23 |
Silicon Germanium Finfet With Low Gate Induced Drain Leakage Current
App 20200127097 - Mochizuki; Shogo ; et al. | 2020-04-23 |
Vertical Transistors Having A Layer Of Charge Carriers In The Extension Region For Reduced Extension Region Resistance
App 20200127104 - Ando; Takashi ; et al. | 2020-04-23 |
Field-effect Transistor Unit Cells For Neural Networks With Differential Weights
App 20200127054 - Ando; Takashi ; et al. | 2020-04-23 |
Vertical Field Effect Transistor With Reduced External Resistance
App 20200119191 - LI; Juntao ; et al. | 2020-04-16 |
Single-fin Cmos Transistors With Embedded And Cladded Source/drain Structures
App 20200118886 - Miao; Xin ; et al. | 2020-04-16 |
Vertical Transport Field-effect Transistors With Uniform Threshold Voltage
App 20200119010 - Lee; ChoongHyun ; et al. | 2020-04-16 |
Vertical Fin Type Bipolar Junction Transistor (bjt) Device With A Self-aligned Base Contact
App 20200119170 - Ok; Injo ; et al. | 2020-04-16 |
Asymmetric Threshold Voltage Vtfet With Intrinsic Dual Channel Epitaxy
App 20200111787 - Lee; Choonghyun ; et al. | 2020-04-09 |
Full Air-gap Spacers For Gate-all-around Nanosheet Field Effect Transistors
App 20200111886 - Ando; Takashi ; et al. | 2020-04-09 |
Asymmetric Threshold Voltage Vtfet With Intrinsic Dual Channel Epitaxy
App 20200111788 - Lee; Choonghyun ; et al. | 2020-04-09 |
Stacked Gate All Around MOSFET with Symmetric Inner Spacer Formed via Sacrificial Pure Si Anchors
App 20200111888 - Hashemi; Pouya ; et al. | 2020-04-09 |
Fabrication Of Silicon Germanium Channel And Silicon/silicon Germanium Dual Channel Field-effect Transistors
App 20200111714 - Lee; ChoongHyun ; et al. | 2020-04-09 |
Reduction Of Top Source/drain External Resistance And Parasitic Capacitance In Vertical Transistors
App 20200105928 - Lee; Choonghyun ; et al. | 2020-04-02 |
Gate-all-around Field-effect Transistor With Asymmetric Threshold Voltage
App 20200105929 - Zhang; Jingyun ; et al. | 2020-04-02 |
Full Air-gap Spacers For Gate-all-around Nanosheet Field Effect Transistors
App 20200105896 - Ando; Takashi ; et al. | 2020-04-02 |
Inner Spacer For Nanosheet Transistors
App 20200098860 - CHENG; KANGGUO ; et al. | 2020-03-26 |
Formation Of Wrap-around-contact To Reduce Contact Resistivity
App 20200098928 - Carr; Adra ; et al. | 2020-03-26 |
Nanosheet Transistors With Different Gate Dielectrics And Workfunction Metals
App 20200098643 - Cheng; Kangguo ; et al. | 2020-03-26 |
High Density Nanotubes And Nanotube Devices
App 20200098861 - Lee; ChoongHyun ; et al. | 2020-03-26 |
Formation Of Wrap-around-contact To Reduce Contact Resistivity
App 20200098927 - Carr; Adra ; et al. | 2020-03-26 |
Asymmetric Threshold Voltage Finfet Device By Partial Channel Doping Variation
App 20200091344 - Reznicek; Alexander ; et al. | 2020-03-19 |
Vertical Fin Field Effect Transistor Devices With Reduced Top Source/drain Variability And Lower Resistance
App 20200091317 - Cheng; Kangguo ; et al. | 2020-03-19 |
Vertical Array Of Resistive Switching Devices Having A Tunable Oxygen Vacancy Concentration
App 20200091231 - Ando; Takashi ; et al. | 2020-03-19 |
Nanosheet Transistors With Different Gate Dielectrics And Workfunction Metals
App 20200091009 - Cheng; Kangguo ; et al. | 2020-03-19 |
Oxide Isolated Fin-type Field-effect Transistors
App 20200091319 - Bao; Ruqiang ; et al. | 2020-03-19 |
Boosted Vertical Field-effect Transistor
App 20200091342 - Ok; Injo ; et al. | 2020-03-19 |
Reduction Of Multi-threshold Voltage Patterning Damage In Nanosheet Device Structure
App 20200091149 - Lee; ChoongHyun ; et al. | 2020-03-19 |
Inner Spacer Formation And Contact Resistance Reduction In Nanosheet Transistors
App 20200091288 - Lee; Choonghyun ; et al. | 2020-03-19 |
Stacked SiGe Nanotubes
App 20200083328 - Li; Juntao ; et al. | 2020-03-12 |
Multivalent Oxide Cap For Multiple Work Function Gate Stacks On High Mobility Channel Materials
App 20200083113 - Ando; Takashi ; et al. | 2020-03-12 |
Method And Structure For Forming A Vertical Field-effect Transistor Using A Replacement Metal Gate Process
App 20200083121 - Lee; ChoongHyun ; et al. | 2020-03-12 |
Co-integrated Channel And Gate Formation Scheme For Nanosheet Transistors Having Separately Tuned Threshold Voltages
App 20200083221 - Ando; Takashi ; et al. | 2020-03-12 |
Method And Structure For Forming A Vertical Field-effect Transistor Using A Replacement Metal Gate Process
App 20200083120 - Lee; ChoongHyun ; et al. | 2020-03-12 |
Wrap-around-contact Structure For Top Source/drain In Vertical Fets
App 20200075736 - Lee; Choonghyun ; et al. | 2020-03-05 |
Wrap-around-contact Structure For Top Source/drain In Vertical Fets
App 20200075737 - Lee; Choonghyun ; et al. | 2020-03-05 |
External Resistance Reduction With Embedded Bottom Source/drain For Vertical Transport Fet
App 20200075723 - Lee; Choonghyun ; et al. | 2020-03-05 |
Vertical Transport Fet Devices Having A Sacrificial Doped Layer
App 20200075747 - Lee; Choonghyun ; et al. | 2020-03-05 |
Replacement Metal Gate Process For Vertical Transport Field-effect Transistor With Self-aligned Shared Contacts
App 20200066903 - Bao; Ruqiang ; et al. | 2020-02-27 |
I/o Device Scheme For Gate-all-around Transistors
App 20200066839 - Zhang; Jingyun ; et al. | 2020-02-27 |
Replacement Metal Gate Process For Vertical Transport Field-effect Transistors With Multiple Threshold Voltages
App 20200066603 - Bao; Ruqiang ; et al. | 2020-02-27 |
Vertical Transport Fets With Asymmetric Channel Profiles Using Dipole Layers
App 20200066864 - Ando; Takashi ; et al. | 2020-02-27 |
Gate-last Process For Vertical Transport Field-effect Transistor
App 20200066604 - Mochizuki; Shogo ; et al. | 2020-02-27 |
Method And Structure For Forming A Vertical Field-effect Transistor
App 20200066881 - Xu; Peng ; et al. | 2020-02-27 |
Reducing Off-State Leakage Current in Si/SiGe Dual Channel CMOS
App 20200066600 - Ok; Injo ; et al. | 2020-02-27 |
Vertical Fin Field Effect Transistor Devices With Self-aligned Source And Drain Junctions
App 20200058767 - Cheng; Kangguo ; et al. | 2020-02-20 |
Forming Vertical Transistor Devices With Greater Layout Flexibility And Packing Density
App 20200058565 - Cheng; Kangguo ; et al. | 2020-02-20 |
Inverse T-shaped Contact Structures Having Air Gap Spacers
App 20200058759 - Cheng; Kangguo ; et al. | 2020-02-20 |
Fin Field-effect Transistors With Enhanced Strain And Reduced Parasitic Capacitance
App 20200058771 - Cheng; Kangguo ; et al. | 2020-02-20 |
Vertical Transport Fets Having A Gradient Threshold Voltage
App 20200058753 - Lee; Choonghyun ; et al. | 2020-02-20 |
Gate Stack Reliability In Vertical Transport Field Effect Transistors
App 20200058766 - LEE; Choonghyun ; et al. | 2020-02-20 |
Multi-threshold Vertical Fets With Common Gates
App 20200051979 - Ando; Takashi ; et al. | 2020-02-13 |
Nanosheet Mosfet With Isolated Source/drain Epitaxy And Close Junction Proximity
App 20200052124 - Miao; Xin ; et al. | 2020-02-13 |
Bottom Spacer Structure For Vertical Field Effect Transistor And Method Of Forming Same
App 20200052094 - Mochizuki; Shogo ; et al. | 2020-02-13 |
Method And Structure For Forming Vertical Transistors With Various Gate Lengths
App 20200052114 - CHENG; Kangguo ; et al. | 2020-02-13 |
Nanosheet Substrate Isolated Source/drain Epitaxy Via Airgap
App 20200044023 - Reznicek; Alexander ; et al. | 2020-02-06 |
Long Channel Optimization For Gate-all-around Transistors
App 20200035820 - Zhang; Jingyun ; et al. | 2020-01-30 |
Lateral Semiconductor Nanotube With Hexagonal Shape
App 20200035488 - Li; Juntao ; et al. | 2020-01-30 |
Gate Stack Optimization For Wide And Narrow Nanosheet Transistor Devices
App 20200035563 - Zhang; Jingyun ; et al. | 2020-01-30 |
Vertical Field-effect Transistor Including A Fin Having Sidewalls With A Tapered Bottom Profile
App 20200027984 - Yeung; Chun Wing ; et al. | 2020-01-23 |
Techniques For Forming Vertical Transport Fet
App 20200027991 - Lee; Choonghyun ; et al. | 2020-01-23 |
Forming Bottom Source and Drain Extension on Vertical Transport FET (VTFET)
App 20200020804 - Mochizuki; Shogo ; et al. | 2020-01-16 |
Co-integrated Channel And Gate Formation Scheme For Nanosheet Transistors Having Separately Tuned Threshold Voltages
App 20200020690 - Ando; Takashi ; et al. | 2020-01-16 |
Vertically Stacked Dual Channel Nanosheet Devices
App 20200020768 - Lee; Choonghyun ; et al. | 2020-01-16 |
Formation Of Pure Silicon Oxide Interfacial Layer On Silicon-germanium Channel Field Effect Transistor Device
App 20200020539 - Ando; Takashi ; et al. | 2020-01-16 |
Self-aligned Silicide/germanide Formation To Reduce External Resistance In A Vertical Field-effect Transistor
App 20200013681 - Lee; ChoongHyun ; et al. | 2020-01-09 |
Formation Of Wrap-around-contact To Reduce Contact Resistivity
App 20200013900 - Carr; Adra ; et al. | 2020-01-09 |
Vertical Fin Field Effect Transistor Device With Reduced Gate Variation And Reduced Capacitance
App 20200013879 - Li; Juntao ; et al. | 2020-01-09 |
Approach To Control Over-etching Of Bottom Spacers In Vertical Fin Field Effect Transistor Devices
App 20200013877 - Bao; Ruqiang ; et al. | 2020-01-09 |
Techniques for Enhancing Vertical Gate-All-Around FET Performance
App 20200006343 - Ok; Injo ; et al. | 2020-01-02 |
Nanosheet Substrate Isolation Scheme By Lattice Matched Wide Bandgap Semiconductor
App 20200006569 - Reznicek; Alexander ; et al. | 2020-01-02 |
Co-integration Of High Carrier Mobililty Pfet And Nfet Devices On The Same Substrate Using Low Temperature Condensation
App 20200006146 - Ando; Takashi ; et al. | 2020-01-02 |
Vertically Stacked Nfet And Pfet With Dual Work Function
App 20200006479 - Reznicek; Alexander ; et al. | 2020-01-02 |
| 