Lee; Byeong-Ryeol
Patent Applications and Registrations
Patent applications and USPTO patent grants for Lee; Byeong-Ryeol.The latest application filed is for "semiconductor devices".
- Lee; Byeong-Ryeol - Yongin-si KR
- Lee; Byeong Ryeol - Seoul KR
- Lee; Byeong Ryeol - Kyoungki-do KR
| Patent | Date |
|---|---|
| Semiconductor devices Grant 9,935,167 - Noh , et al. April 3, 2 | 2018-04-03 |
| Semiconductor device Grant 9,548,401 - Yoo , et al. January 17, 2 | 2017-01-17 |
| Semiconductor Devices App 20170005162 - NOH; Jin-Hyun ; et al. | 2017-01-05 |
| Semiconductor devices Grant 9,472,659 - Noh , et al. October 18, 2 | 2016-10-18 |
| Semiconductor Device App 20160149057 - YOO; JAE-HYUN ; et al. | 2016-05-26 |
| Semiconductor Devices App 20160141413 - NOH; Jin-Hyun ; et al. | 2016-05-19 |
| Methods of fabricating semiconductor devices Grant 7,229,870 - Lee June 12, 2 | 2007-06-12 |
| Semiconductor device and method of fabricating the same App 20070077715 - Kang; Tae-Woong ; et al. | 2007-04-05 |
| Method of fabricating a fin transistor Grant 7,179,713 - Lee February 20, 2 | 2007-02-20 |
| Method of fabricating a test pattern for junction leakage current Grant 7,074,711 - Lee July 11, 2 | 2006-07-11 |
| Method of fabricating a fin field effect transistor Grant 7,067,360 - Lee June 27, 2 | 2006-06-27 |
| Methods of fabricating semiconductor devices App 20050158941 - Lee, Byeong Ryeol | 2005-07-21 |
| Method of fabricating a fin transistor App 20050142780 - Lee, Byeong Ryeol | 2005-06-30 |
| Method of fabricating MOS transistor App 20050142719 - Lee, Byeong Ryeol | 2005-06-30 |
| Method of fabricating a test pattern for junction leakage current App 20050142838 - Lee, Byeong Ryeol | 2005-06-30 |
| Method of fabricating a fin field effect transistor App 20050142738 - Lee, Byeong Ryeol | 2005-06-30 |
| Method of forming isolation structures in embedded semiconductor device App 20040166638 - Lee, Byeong Ryeol | 2004-08-26 |
| Method for fabricating a semiconductor device having triple wells Grant 6,066,523 - Shim , et al. May 23, 2 | 2000-05-23 |
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