Patent | Date |
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Intelligent voice recognizing method, apparatus, and intelligent computing device Grant 11,222,636 - Lee January 11, 2 | 2022-01-11 |
Intelligent voice recognizing method with improved noise cancellation, voice recognizing apparatus, intelligent computing device and server Grant 11,211,062 - Lee December 28, 2 | 2021-12-28 |
Method and apparatus for determining voice enable device Grant 11,132,991 - Park , et al. September 28, 2 | 2021-09-28 |
Apparatus for noise canceling and method for the same Grant 10,818,309 - Lee , et al. October 27, 2 | 2020-10-27 |
Apparatus For Noise Canceling And Method For The Same App 20200211580 - LEE; Bongki ;   et al. | 2020-07-02 |
Method And Apparatus For Determining Voice Enable Device App 20200074988 - PARK; Heewan ;   et al. | 2020-03-05 |
Intelligent Voice Outputting Method, Apparatus, And Intelligent Computing Device App 20190392858 - LEE; Bongki | 2019-12-26 |
Intelligent Voice Recognizing Method, Apparatus, And Intelligent Computing Device App 20190385608 - Lee; Bongki | 2019-12-19 |
Methods of fabricating integrated circuits Grant 9,472,465 - Lee , et al. October 18, 2 | 2016-10-18 |
Integration method for fabrication of metal gate based multiple threshold voltage devices and circuits Grant 9,455,201 - Joshi , et al. September 27, 2 | 2016-09-27 |
Integrated circuit having multiple threshold voltages Grant 9,362,180 - Lee , et al. June 7, 2 | 2016-06-07 |
Integrated circuits having finFETs with improved doped channel regions and methods for fabricating same Grant 9,287,180 - Liu , et al. March 15, 2 | 2016-03-15 |
Semiconductor Structure With Increased Space And Volume Between Shaped Epitaxial Structures App 20160005657 - KRISHNAN; Bharat ;   et al. | 2016-01-07 |
Methods for fabricating integrated circuits including fluorine incorporation Grant 9,196,475 - Lee , et al. November 24, 2 | 2015-11-24 |
Methods Of Fabricating Integrated Circuits App 20150325681 - Lee; Bongki ;   et al. | 2015-11-12 |
Methods For Fabricating Integrated Circuits Including Fluorine Incorporation App 20150303057 - Lee; Bongki ;   et al. | 2015-10-22 |
Semiconductor structure with increased space and volume between shaped epitaxial structures Grant 9,165,767 - Krishnan , et al. October 20, 2 | 2015-10-20 |
Integrated Circuits Having Finfets With Improved Doped Channel Regions And Methods For Fabricating Same App 20150294915 - Liu; Jinping ;   et al. | 2015-10-15 |
Integrated Circuit Having Multiple Threshold Voltages App 20150243563 - LEE; Bongki ;   et al. | 2015-08-27 |
Integration Method For Fabrication Of Metal Gate Based Multiple Threshold Voltage Devices And Circuits App 20150243652 - JOSHI; Manoj ;   et al. | 2015-08-27 |
Integrated circuits having FinFETs with improved doped channel regions and methods for fabricating same Grant 9,093,476 - Liu , et al. July 28, 2 | 2015-07-28 |
Reducing gate expansion after source and drain implant in gate last process Grant 9,059,218 - Krishnan , et al. June 16, 2 | 2015-06-16 |
Increased Space Between Epitaxy On Adjacent Fins Of Finfet App 20150123146 - KRISHNAN; Bharat ;   et al. | 2015-05-07 |
Reducing Gate Expansion After Source And Drain Implant In Gate Last Process App 20150076622 - Krishnan; Bharat ;   et al. | 2015-03-19 |
Integrated Circuits Having Finfets With Improved Doped Channel Regions And Methods For Fabricating Same App 20150035062 - LIU; Jinping ;   et al. | 2015-02-05 |
Method and apparatus for adjusting threshold voltage in a replacement metal gate integration Grant 8,912,085 - Lee , et al. December 16, 2 | 2014-12-16 |