Lee; Albert Sanghyup

Patent Applications and Registrations

Patent applications and USPTO patent grants for Lee; Albert Sanghyup.The latest application filed is for "semiconductor device metal-insulator-semiconductor contacts with interface layers and methods for forming the same".

Company Profile

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Lee; Albert Sanghyup - Cupertino CA

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Patent Activity

Patent	Date
Atomic layer deposition of HfAlC as a metal gate workfunction material in MOS devices Grant 9,607,904 - Lee , et al. March 28, 2	2017-03-28
Semiconductor Device Metal-Insulator-Semiconductor Contacts with Interface Layers and Methods for Forming the Same App 20160181380 - Joshi; Amol ; et al.	2016-06-23
Reduction of native oxides by annealing in reducing gas or plasma Grant 9,312,137 - Greer , et al. April 12, 2	2016-04-12
Atomic Layer Deposition of HfAlC as a Metal Gate Workfunction Material in MOS Devices App 20160035631 - Lee; Albert Sanghyup ; et al.	2016-02-04
Metal-insulator-semiconductor (MIS) contact with controlled defect density App 20150380309 - Mujumdar; Salil ; et al.	2015-12-31
Reduction of native oxides by annealing in reducing gas or plasma App 20150118828 - Greer; Frank ; et al.	2015-04-30
ReRAM stacks preparation by using single ALD or PVD chamber Grant 8,846,484 - Lee , et al. September 30, 2	2014-09-30
In-Situ Nitride Initiation Layer For RRAM Metal Oxide Switching Material App 20140284545 - Lee; Albert Sanghyup	2014-09-25

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