Leamy; Harry J.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Leamy; Harry J..The latest application filed is for "process for the growth of structures based on group iv semiconductor materials".

Company Profile

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Leamy; Harry J. - Summit NJ
Leamy; Harry J. - New Providence NJ

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Process for the growth of structures based on group IV semiconductor materials Grant 4,670,086 - Leamy June 2, 1	1987-06-02
Method of increasing the grain size of polycrystalline materials by directed energy-beams Grant 4,406,709 - Celler , et al. September 27, 1	1983-09-27
Method of forming dielectrically isolated silicon semiconductor materials utilizing porous silicon formation Grant 4,380,865 - Frye , et al. April 26, 1	1983-04-26
Formation of multilayer dopant distributions in a semiconductor Grant 4,364,778 - Leamy , et al. December 21, 1	1982-12-21
Gallium arsenide devices having reduced surface recombination velocity Grant 4,273,594 - Heller , et al. June 16, 1	1981-06-16
Passivation of defects in laser annealed semiconductors Grant 4,266,986 - Benton , et al. May 12, 1	1981-05-12
Healing radiation defects in semiconductors Grant 4,238,694 - Kimerling , et al. December 9, 1	1980-12-09
Patterned epitaxial regrowth using overlapping pulsed irradiation Grant 4,234,358 - Celler , et al. November 18, 1	1980-11-18

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