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Patent applications and USPTO patent grants for Latchford; Ian S..The latest application filed is for "conductive bi-layer e-beam resist with amorphous carbon".
Patent | Date |
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Conductive bi-layer e-beam resist with amorphous carbon Grant 6,913,868 - Bencher , et al. July 5, 2 | 2005-07-05 |
Airgap for semiconductor devices Grant 6,780,753 - Latchford , et al. August 24, 2 | 2004-08-24 |
Conductive bi-layer e-beam resist with amorphous carbon App 20040142281 - Bencher, Christopher D. ;   et al. | 2004-07-22 |
Airgap For Semiconductor Devices App 20030224591 - Latchford, Ian S. ;   et al. | 2003-12-04 |
Passivating, stripping and corrosion inhibition of semiconductor substrates Grant 5,545,289 - Chen , et al. August 13, 1 | 1996-08-13 |
Low pressure anisotropic etch process for tantalum silicide or titanium silicide layer formed over polysilicon layer deposited on silicon oxide layer on semiconductor wafer Grant 5,160,407 - Latchford , et al. November 3, 1 | 1992-11-03 |
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