Larson; William L.
Patent Applications and Registrations
Patent applications and USPTO patent grants for Larson; William L..The latest application filed is for "passivated magneto-resistive bit structure".
- Larson; William L. - Eden Prairie MN
- Larson; William L - Eden Prairie MN
- Larson; William L. - Colorado Springs CO
| Patent | Date |
|---|---|
| Passivated magneto-resistive bit structure and passivation method therefor Grant 7,427,514 - Liu , et al. September 23, 2 | 2008-09-23 |
| Varactor with improved tuning range Grant 7,169,679 - Yue , et al. January 30, 2 | 2007-01-30 |
| Methods of increasing write selectivity in an MRAM Grant 6,992,918 - Li , et al. January 31, 2 | 2006-01-31 |
| Passivated magneto-resistive bit structure App 20040227244 - Liu, Harry ; et al. | 2004-11-18 |
| Passivated magneto-resistive bit structure Grant 6,806,546 - Liu , et al. October 19, 2 | 2004-10-19 |
| Methods of increasing write selectivity in an MRAM Grant 6,791,856 - Li , et al. September 14, 2 | 2004-09-14 |
| Methods of increasing write selectivity in an MRAM Grant 6,756,240 - Li , et al. June 29, 2 | 2004-06-29 |
| Passivated magneto-resistive bit structure and passivation method therefor App 20040091634 - Liu, Harry ; et al. | 2004-05-13 |
| Methods Of Increasing Write Selectivity In An Mram App 20040082082 - Li, Shaoping ; et al. | 2004-04-29 |
| Methods of increasing write selectivity in an MRAM App 20040004878 - Li, Shaoping ; et al. | 2004-01-08 |
| Passivated magneto-resistive bit structure and passivation method therefor Grant 6,623,987 - Liu , et al. September 23, 2 | 2003-09-23 |
| Varactor with improved tuning range App 20030127691 - Yue, Cheisan J. ; et al. | 2003-07-10 |
| Methods of increasing write selectivity in an MRAM App 20030086321 - Li, Shaoping ; et al. | 2003-05-08 |
| MRAM architectures for increased write selectivity Grant 6,424,564 - Li , et al. July 23, 2 | 2002-07-23 |
| Passivated magneto-resistive bit structure App 20020085412 - Liu, Harry ; et al. | 2002-07-04 |
| Passivated magneto-resistive bit structure and passivation method therefor App 20020080645 - Liu, Harry ; et al. | 2002-06-27 |
| MRAM architectures for increased write selectivity App 20020012268 - Li, Shaoping ; et al. | 2002-01-31 |
| MRAM architectures for increased write selectivity App 20020012269 - Li, Shaoping ; et al. | 2002-01-31 |
| Stacked ferroelectric memory cell Grant 5,495,117 - Larson February 27, 1 | 1996-02-27 |
| Multilayer electrodes for integrated circuit capacitors Grant 5,005,102 - Larson April 2, 1 | 1991-04-02 |
| SEC | 0001023395 | LARSON WILLIAM L of DELAWARE |
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